MOCVD Growth of Copper and Copper Oxide Films from Bis-β-Diketonate Complexes of Copper. The Role of Carrier Gas on Deposit Composition.

1991 ◽  
Vol 250 ◽  
Author(s):  
William S. Rees ◽  
Celia R. Caballero
Keyword(s):  
Copper Oxide ◽  
Elemental Composition ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Carrier Gas ◽  
Mocvd Growth ◽  
Vapor Deposit

AbstractAn examination of thermal chemical vapor deposit elemental composition by EDAX has been completed for material films grown from Cu(acac)2 and Cu(tmhd)2 (acac = pentane-2,4-dionate; tmhd = 2,2,6,6-tetramethylheptane-3,5-dionate), using both hydrous and anhydrous carrier gas steams each of reducing (H2), inert (H2), and oxidizing (O2) composition.

Chemical vapor deposition of copper oxide films and entangled quasi-1D nanoarchitectures as innovative gas sensors

2009 ◽  
Vol 141 (1) ◽  
pp. 270-275 ◽  
Author(s):  
D. Barreca ◽  
E. Comini ◽  
A. Gasparotto ◽  
C. Maccato ◽  
C. Sada ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Copper Oxide ◽  
Gas Sensors ◽  
Vapor Deposition ◽  
Oxide Films ◽  
Chemical Vapor

Modeling MOCVD Growth of YBCO Thin Films

2000 ◽  
Vol 648 ◽  
Author(s):  
Tak Shing Lo ◽  
Robert V. Kohn
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Thin Film Growth ◽  
Deposition Mechanism ◽  
New Approach ◽  
Mocvd Growth ◽  
Ybco Thin Films

AbstractWe develop a new approach to the modeling of thin film growth. Our model treats the adatom density on the surface of the film as an explict unknown. This approach (1) clarifies the role of the “uphill current” associated with the Schwoebel barrier; (2) facilitates simple, physically natural coupling to the mechanism of deposition; and (3) permits discussion of multispecies effects. Our implementation focuses on spiral mode growth of YBCO thin films, with MOCVD (Metallorganic chemical vapor deposition) as the deposition mechanism.

Role of the carrier gas flow rate in monolayer MoS2 growth by modified chemical vapor deposition

Nano Research ◽  
2016 ◽  
Vol 10 (2) ◽  
pp. 643-651 ◽  
Author(s):  
Hengchang Liu ◽  
Yuanhu Zhu ◽  
Qinglong Meng ◽  
Xiaowei Lu ◽  
Shuang Kong ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Monolayer Mos2 ◽  
Gas Flow Rate ◽  
Carrier Gas ◽  
Carrier Gas Flow

Study of the Role of Small Additions of Zr in the CVD- FBR Aluminization Process

2009 ◽  
Vol 289-292 ◽  
pp. 293-300
Author(s):  
L. Sánchez ◽  
F.J. Bolívar ◽  
M.P. Hierro ◽  
F.J. Pérez
Keyword(s):  
Fluidized Bed ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Fluidized Bed Reactor ◽  
Iron Aluminide ◽  
Martensitic Steels ◽  
Aluminide Coatings ◽  
Deposition Parameters ◽  
Zirconium Powder

In this work, iron aluminide coatings were developed by Chemical Vapor Deposition in Fluidized Bed Reactor (CVD-FBR) on ferritic-martensitic steels. Small additions of zirconium powder were introduced in the fluidized bed; as a consequence, the obtained coatings are thicker than that without zirconium additions. When Zr powders are added in the fluidized bed, the deposition atmosphere drastically changes, leading to increase the deposition rate. Thermodynamic calculations were carried out to simulate the modifications in the CVD atmosphere in the Al/Zr deposition system in comparison to the single aluminization. In order to optimize the conditions of the deposition, parameters such as temperature and concentration of zirconium introduced into the bed were evaluated and compared with the results obtained for the single aluminum deposition.

NaCl-Type Oxide Films Prepared by Plasma-Enhanced Metalorganic Chemical Vapor Deposition

1993 ◽  
Vol 32 (Part 2, No. 10A) ◽  
pp. L1448-L1450 ◽  
Author(s):  
Eiji Fujii ◽  
Atsushi Tomozawa ◽  
Satoru Fujii ◽  
Hideo Torii ◽  
Masumi Hattori ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Metalorganic Chemical
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