Quantitative Ruthenium Method for Analysis of Nitrogen Ion-Implanted Titanium Alloy (Ti-6AI-4V) and the Effect on Bacterial Adherence

1991 ◽  
Vol 252 ◽  
Author(s):  
Beverly L. Giammara ◽  
James M. Williams ◽  
David J. Birch ◽  
Joanne J. Dobbins

ABSTRACTThe effects of nitrogen ion implantation of Ti-6AI-4V alloy on growth of Pseudomonas aeruginosa bacteria on surfaces of the alloy have been investigated. Results for ion implanted samples were compared with controls with similarly smoothly polished surfaces and with controls that had intentionally roughened surfaces. The test consisted of exposing sterile alloy samples to a microbiological broth, to which 24 hour-old cultures of Pseudomonas aeruginosa had been added. After bioassociation at normal temperature 37°C, bacteria adhering to the surface were fixed and treated with a new ruthenium tetroxide staining method, and quantified by use of scanning electron microscopy (SEM), back-scattered electron imaging and EDAX energy dispersive microanalysis. For smooth samples of the alloy, after a 12 hour growth period, the retained bacteria (revealed by the biologically incorporated ruthenium), decreased monotonically with nitrogen dose out to a total fluence of approximately 7 × 1017/cm2 in an affected depth of approximately 0.1500 μm. The SEM confirmed that the Pseudomonas aeruginosa adhered equally to control materials. The ruthenium studies revealed that the amount of bacterial adhesion is indirectly proportional to the nitrogen ion implantation of the titanium. The greater the percentage of nitrogen ion implantation in the titanium alloy, the less bacteria colonized the disk.

1981 ◽  
Vol 7 ◽  
Author(s):  
J.B. Pethica ◽  
W.C. Oliver

ABSTRACTTo measure the mechanical properties of ion implanted layers special microhardness tests with penetration depths less than 100 nm have been made. The results show that increases in hardness of up to 50 % may occur in a number of metals as a result of nitrogen ion implantation. Considerable carbon is also present in the implanted surfaces and when in the form of a distinct layer, may give an apparent softening of surfaces at high doses.


1983 ◽  
Vol 105 (2) ◽  
pp. 239-244 ◽  
Author(s):  
J. A. Kirk ◽  
G. W. Egerton ◽  
B. D. Sartwell

A pin on disk wear test apparatus was used to evaluate wear and friction properties for nitrogen ion implanted and non-ion implanted steel disks in the presence of a lubricant. Both AISI/1018 mild steel and 304 stainless steel were examined. Typical fluence levels for ion implantation were above 1017 ions/cm2. In this paper disk wear is measured directly by a Talysurf profilometer tracing of the disk wear scar. By varying the contact area of the pin it was possible to evaluate wear behavior of both unimplanted and implanted disks over a wide range of contact pressures. It is shown that stainless steel disk wear can be decreased by nitrogen ion implantation, provided that contact pressures remain less than the yield strength of the substrate material. No significant wear improvements were observed for 1018 steel. To evaluate improvements in hardness due to nitrogen ion implantation, very low penetration depth microhardness measurements were made and the indentation diagonals were measured in a scanning electron microscope. These results and their limitations are also presented.


1985 ◽  
Vol 55 ◽  
Author(s):  
P. A. Higham

ABSTRACTIon Implantation is emerging as a specialized surface treatment method by which orthopaedic alloys can be doped in order to modify for corrision, fatigue and wear properties.In this paper alterations in the corrosion and fatigue resistance of 316LVM stainless steel and Ti 6A1-4V ELI titanium alloy are considered. The effect of various variables was investigated; ion species, flux, accelerating voltage.Changes in corrosion resistance were monitored by performing anodic polarization studies in deaerated 0.1M NaCi solution at 22°C. The most effective species were found to be tantalum and boron for improvements to stainless steel.Fatigue properties were investigated using a Wohler type rotating bend test. Preliminary results show that nitrogen ion implantation improved the fatigue life for the steel but not the titanium alloy. Indications were found to suggest that time since implantation affect the fatigue properties.


1996 ◽  
Vol 79 (1-3) ◽  
pp. 240-245 ◽  
Author(s):  
D. Krupa ◽  
E. Jezierska ◽  
J. Baszkiewicz ◽  
M. Kamiński ◽  
T. Wierzchoń ◽  
...  

1985 ◽  
Vol 55 ◽  
Author(s):  
Frank D. Matthews ◽  
Keith W. Greer ◽  
Douglas L. Armstrong

ABSTRACTNitrogen ion implantation was investigated as a means of improving the wear resistance of Ti-6Al-4V alloy and the performance of the Ti-6Al-4V/ultra high molecular weight polyethylene (UHMWPE) wear couple. Included in the pin-on-disc wear study were cobalt-chromium and stainless steel controls as well as non-ion-implanted Ti-6Al-4V. Ion implanted Ti-6Al-4V and the control alloys exhibited minor scratching whereas non-ion-implanted Ti-6AI-4V exhibited definite wear scars. Gravimetric analysis of the UHMWPE discs revealed no significant difference between those worn against ion implanted Ti-6Al-4V and the control alloys. Discs worn against non-ionimplanted Ti-6Al-4V, however, exhibited significantly more weight loss than the other couples. The results of this testing indicate that nitrogen ion implantation improves the wear resistance of Ti-6Al-4V with an attendant decrease in the amount of polyethylene abrasive wear.


2009 ◽  
Vol 203 (17-18) ◽  
pp. 2605-2607 ◽  
Author(s):  
A.K. Lal ◽  
S.K. Sinha ◽  
P.K. Barhai ◽  
K.G.M. Nair ◽  
S. Kalavathy ◽  
...  

ChemInform ◽  
1989 ◽  
Vol 20 (34) ◽  
Author(s):  
A.-M. DE BECDELIEVRE ◽  
Y. ARNAUD ◽  
N. MESBAHI ◽  
M. BRUNEL ◽  
J. DE BECDELIEVRE ◽  
...  

1999 ◽  
Vol 14 (1) ◽  
pp. 213-221 ◽  
Author(s):  
S. L. Cheng ◽  
L. J. Chen ◽  
B. Y. Tsui

Formation of TiSi2 on nitrogen ion implanted (001)Si has been investigated. Nitrogen ion implantation was found to suppress the B and As diffusion in silicon. For Ti on 30 keV BF2+−20 keV N2+ and 30 keV As+−20 keV N2+ implanted samples, a continuous low-resistivity TiSi2 layer was found to form in all samples annealed at 700–900 °C. For Ti on 1 ×1015/cm2 N2+ 1- and As+ implanted samples, end-of-range defects were completely eliminated in all samples annealed at 700–900 °C. The results indicated that with appropriate control, N+-implantation can be successfully implemented in forming low-resistivity TiSi2 contacts on shallow junctions in deep submicron devices.


1999 ◽  
Vol 111 (1) ◽  
pp. 86-91 ◽  
Author(s):  
D. Krupa ◽  
J. Baszkiewicz ◽  
E. Jezierska ◽  
J. Mizera ◽  
T. Wierzchoń ◽  
...  

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