Study of Ion Implanted Copper Laser Mirrors by Spectroscopic Ellipsometry

1986 ◽  
Vol 74 ◽  
Author(s):  
P. G. Snyder ◽  
A. Massengale ◽  
K. Memarzadeh ◽  
J. A. Woollam ◽  
D. C. Ingram ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Ion Implantation ◽  
Void Fraction ◽  
Spectroscopic Ellipsometry ◽  
Low Energy ◽  
Near Surface ◽  
Cu Ions ◽  
Microscopic Surface ◽  
Ion Implanted

AbstractImplantation with 400 keV Ag or Cu ions improves the near-surface microstructural quality and reflectance of diamond turned and mechanically polished flat copper laser mirrors. Spectroscopic ellipsometry is sensitive to changes in either the microscopic surface roughness, or in the nearsurface substrate void fraction, and both parameters are observed to change upon implantation. Substrate density as a function of ion fluence peaks at about 5 × 10 15cm-2. Low energy (300 eV) Ar ion implantation can cause either a reduction or increase in microscopic surface roughness, depending on fluence.

Defect Formation by Ion Implantation in Cz-Si Studied by a Monoenergetic Positron Beam

1992 ◽  
Vol 262 ◽  
Author(s):  
A. Uedono ◽  
Y. Ujihira ◽  
L. Wei ◽  
Y. Tabuki ◽  
S. Tanigawa ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Ion Implantation ◽  
Defect Formation ◽  
Positron Beam ◽  
Low Energy ◽  
Doppler Broadening ◽  
Positron Energy ◽  
Annealing Experiments ◽  
Incident Positron ◽  
Ion Implanted

ABSTRACTVacancy-type defects in ion implanted Si were studied by a monoenergetic positron beam. The depth-distributions of the defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. The results showed that a size of vacany-clusters introduced by 150-keV P+-ion implantation was found to be smaller than that introduced by 2-MeV P+-ion implantation. This was attributed to an overlap of collision cascades in low-energy (150 keV) ion implanted specimens. From isochronal annealing experiments for 80-keV B+- and 150-keV P+-ion implanted specimens, the defected region was removed by 1200 °C annealing, however, for 2-MeV P+-implanted specimen, two-types of oxygen-vacancy complexes were found to coexist even after 1200 °C annealing.

scholarly journals Microstructure and Mechanical Properties of Ti + N Ion Implanted Cronidur30 Steel

Materials ◽  
2019 ◽  
Vol 12 (3) ◽  
pp. 427 ◽  
Author(s):  
Jie Jin ◽  
Wei Wang ◽  
Xinchun Chen
Keyword(s):  
Mechanical Properties ◽  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Structural Modification ◽  
Surface Region ◽  
Grazing Incidence ◽  
Bearing Steel ◽  
Near Surface ◽  
X Ray ◽  
Ion Implanted

In this study, Ti + N ion implantation was used as a surface modification method for surface hardening and friction-reducing properties of Cronidur30 bearing steel. The structural modification and newly-formed ceramic phases induced by the ion implantation processes were investigated by transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and grazing incidence X-ray diffraction (GIXRD). The mechanical properties of the samples were tested by nanoindentation and friction experiments. The surface nanohardness was also improved significantly, changing from ~10.5 GPa (pristine substrate) to ~14.2 GPa (Ti + N implanted sample). The friction coefficient of Ti + N ion implanted samples was greatly reduced before failure, which is less than one third of pristine samples. Furthermore, the TEM analyses confirmed a trilamellar structure at the near-surface region, in which amorphous/ceramic nanocrystalline phases were embedded into the implanted layers. The combined structural modification and hardening ceramic phases played a crucial role in improving surface properties, and the variations in these two factors determined the differences in the mechanical properties of the samples.

A study on the Surface Properties of Nitrogen Implanted H13 Steel by Plasma Immersion Ion Implantation

2006 ◽  
Vol 118 ◽  
pp. 275-280
Author(s):  
Y.Z. You ◽  
D.I. Kim ◽  
H.G. Chun
Keyword(s):  
Surface Roughness ◽  
Ion Implantation ◽  
Surface Properties ◽  
Photoelectron Spectroscopy ◽  
Surface Hardness ◽  
Wear Loss ◽  
Wear Property ◽  
H13 Steel ◽  
Near Surface ◽  
Plasma Immersion Ion Implantation

The near surface of the H13 steel was implanted by using Plasma immersion ion implantation (PIII) system at constant bias voltage of −20 kV with varying nitrogen (N+ ) ion dose (3, 6, 9, 12, 15×1017 ions/cm2 ). The surface properties of the N+ ion implanted steel were investigated by measuring the microhardness, wear loss and friction coefficient. As increasing N+ ion dose (12×1017 ions/cm2), both wear property and surface hardness were increased. However, these properties were decreased as the incident ion dose increased over 12×1017 ions/cm2. The elemental depth profile and surface roughness were obtained with X-ray photoelectron spectroscopy (XPS) and surface roughness tester, respectively.

scholarly journals Silver Nanoparticles in Porous Germanium

2019 ◽  
Vol 3 (3) ◽  
Keyword(s):  
Ion Implantation ◽  
Ag Nanoparticles ◽  
Average Diameter ◽  
Size Distribution Function ◽  
Thin Layers ◽  
Low Energy ◽  
High Dose ◽  
Near Surface ◽  
Backscattered Electrons ◽  
20 Nm

Recent experiments on fabrication of nanoporous Si and Ge layers with Ag nanoparticles by low-energy high-dose ion implantation are discussed. Ag+-ion implantation of single-crystal c-Si and c-Ge at low-energy (E = 30 keV) highdoses (D = 1.25·1015 - 1.5·1017 ion/cm2 ) and current density (J = 2-15 μA/cm2 ) was carried out for this purpose. The changes of Si and Ge surface morphology after ion implantation were studied by scanning electron and atom-force microscopy. The near surface area of samples was also analyzed by diffraction of the backscattered electrons and energydispersive X-ray microanalysis. Amorphization of near-surface layer was observed at the lowest implantation doses of c-Si. Ag nanoparticles were synthesized and uniformly distributed over the near Si surface when the threshold dose of 3.1·1015 ion/cm2 exceeded. At a dose of more than 1017 ion/cm2 , the formation of a surface nanoporous PSi structure was detected. Ag nanoparticle size distribution function became bimodal and the largest particles were localized along Si-pore walls. In the case of Ge substrates, as a result of the implantation on the c-Ge surface, a porous amorphous PGe layer of a spongy structure was formed consisting of a network of intersecting Ge nanowires with an average diameter of ~ 10-20 nm. At the ends of the nanowires, the synthesis of Ag nanoparticles was observed. It was found that the formation of pores during Ag+-ion implantation was accompanied by efficient spattering of the Si and Ge surface. Thus, ion implantation is suggested to be used for the formation of nanoporous semiconductor thin layers for industry, which could be easily combined with the crystalline matrix for various applications.

scholarly journals Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

2021 ◽  
Vol 264 ◽  
pp. 05037
Author(s):  
Ilkhom Bekpulatov ◽  
Ilkhom Turapov ◽  
Sevara Abraeva ◽  
Jakhongir Normuminov
Keyword(s):  
Electron Diffraction ◽  
Ion Implantation ◽  
Electron Spectroscopy ◽  
Surface Region ◽  
Low Energy ◽  
Subsequent Annealing ◽  
Metal Silicide ◽  
Slow Electron ◽  
Near Surface ◽  
Nanoscale Films

Using the methods of electron spectroscopy and slow electron diffraction, we studied the processes of the formation of nanosized metal silicide films in the near-surface region of Si (111) and Si (100) during low-energy implantation of Ba ions and alkaline elements. The optimal technological modes of ion implantation and subsequent annealing for the formation of thin nanoscale films of silicides were determined. The type of surface superstructures of thin silicide films has been established.

X-ray microanalysis of ion-implantation profiles in backthinned specimens

1984 ◽  
Vol 42 ◽  
pp. 578-579
Author(s):  
J. Bentley ◽  
P. Angelini
Keyword(s):  
Ion Implantation ◽  
Penetration Depth ◽  
Low Energy ◽  
Concentration Profiles ◽  
X Ray ◽  
Ion Implanted

As an alternative to the use of cross-sectioned specimens, a method which uses backthinned specimens has been developed for the measurement of concentration profiles in ion-implanted materials. The technique is less direct but avoids the sometimes insurmountable problems associated with the preparation of suitable cross-sectioned specimens and is more applicable to low-energy implants where the penetration depth is small. A series of x-ray spectra is measured in a wedge-shaped, backthinned foil.

Synthesis of the Dilute Magnetic Semiconductor CdMnTe by Ion Implantation of Mn into CdTe

1986 ◽  
Vol 89 ◽  
Author(s):  
G. H. Braunstein ◽  
D. Heiman ◽  
S. P. Withrow ◽  
G. Dresselhaus
Keyword(s):  
Ion Implantation ◽  
Dilute Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Energy Shift ◽  
Complete Recovery ◽  
Characteristic Energy ◽  
Lattice Order ◽  
Near Surface ◽  
Radiation Induced ◽  
Ion Implanted

AbstractThe dilute magnetic semiconductor CdMnTe has been synthesized by ion implantation of Mn into CdTe. Samples of CdTe have been implanted with Mn ions of 60 keV energy to fluences in the range 1 × 1013 cm−2 to 2×1016 cm−2 and subsequently annealed, using rapid thermal annealing, for 10–15 sec at temperatures 300 ≤ TA ≤ 730°C. The successful formation of a near surface layer of CdMnTe is demonstrated by studies of the structural, electronic and magnetic properties of the ion implanted and annealed sampies; Rutherford backscattering-channeling analysis of the radiation-induced damage indicates complete recovery of lattice order after annealing at 700°C. Photoluminescence measurements, performed at 2K, reveal an increase in the energy band gap of the ion implanted alloy with respect to CdTe. Application of magnetic fields, up to 8T, produce both the characteristic energy shift of the excitonic recombination peak and polarization of the emitted radiation (in the Faraday configuration) previously observed in bulk–grown CdMnTe material.

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