Defect Annihilation in Czochralski-Grown Silicon During Out-Diffusion Process Probed with Variable-Energy Positron Beam

1992 ◽  
Vol 262 ◽  
Author(s):  
T. Kitano ◽  
L. Wei ◽  
Y. Tabuki ◽  
S. Tanigawa ◽  
H. Mikoshiba
Keyword(s):  
High Temperature ◽  
Diffusion Process ◽  
Grown Crystal ◽  
Positron Beam ◽  
Defect Concentration ◽  
Energy Beam ◽  
Oxygen Cluster ◽  
Variable Energy ◽  
Oxygen Atoms

ABSTRACTThe defect annihilation in CZ-crystal was first detected during the process of oxygen out-diffusion, by the positron measurements with a variable-energy beam. The defects, which were related to oxygen atoms such as oxygen cluster, were mainly annihilated at the high temperature, ex., 1150°C. The defect concentration was decreasing down to one tenth, compared with that for an as-grown crystal.

Isochronal annealing studies on 1.1 MeV Fe ion irradiated RAFM steel using variable energy slow positron beam

2017 ◽  
Author(s):  
Renjith Ramachandran ◽  
C. David ◽  
R. Rajaraman ◽  
S. Abhaya ◽  
B. K. Panigrahi ◽  
...  
Keyword(s):  
Positron Beam ◽  
Isochronal Annealing ◽  
Slow Positron ◽  
Rafm Steel ◽  
Variable Energy

Defect Diffusion Models in NMR and Dielectric Relaxation

1978 ◽  
Vol 33 (11) ◽  
pp. 1294-1306 ◽  
Author(s):  
Rainer Kimmich ◽  
Gerhard Voigt
Keyword(s):  
Diffusion Process ◽  
Dielectric Relaxation ◽  
Diffusion Models ◽  
Defect Concentration ◽  
Relaxation Behaviour ◽  
Defect Diffusion ◽  
Rotational Isomers ◽  
Mean Lifetime ◽  
The Mean

The effect of diffusing defects such as vacancies, displacements, torsions, and rotational isomers on the nmr and dielectric relaxation behaviour is treated under various aspects. The influences of the dimensionality of the diffusion process, of the mutual hindrance, of the defect concentration, of the defect length and of the mean lifetime are derived and discussed.

Characterisation of defects in LiF implanted with Ar+ using variable energy positron beam

2002 ◽  
Vol 192 (1-2) ◽  
pp. 202-205
Author(s):  
E.J. Sendezera ◽  
A.T. Davidson ◽  
P.T. Jili ◽  
M.L. Chithambo ◽  
W. Anwand ◽  
...  
Keyword(s):  
Positron Beam ◽  
Variable Energy

POSITRON INTERACTION IN POLYMERS

2004 ◽  
Vol 19 (23) ◽  
pp. 3951-3959 ◽  
Author(s):  
CORINE BAS ◽  
N. DOMINIQUE ALBÉROLA ◽  
MARIE-FRANCE BARTHE ◽  
JÉRÉMIE De BAERDEMAEKER ◽  
CHARLES DAUWE
Keyword(s):  
Positron Annihilation ◽  
Chemical Structure ◽  
Positron Beam ◽  
Positron Annihilation Spectroscopy ◽  
Hole Size ◽  
Doppler Broadening ◽  
Positron Source ◽  
Positron Annihilation Lifetime ◽  
Doppler Broadening Spectra ◽  
Variable Energy

A series of dense copolyimide membranes was characterized using positron annihilation spectroscopy. The positron annihilation lifetime spectroscopy performed on film with a classical positron source gives informations on the positronium fraction formed and also on the hole size within the film. The Doppler broadening spectra (DBS) of the gamma annihilation rays coupled with a variable energy positron beam allow the microstructural analyses as a function of the film depth. Experimental data were also linked to the chemical structure of the polyimides. It was found that the presence of the fluorine atoms strongly affects the positron annihilitation process and especially the DBS responses.

The SiO2/Si Interface Probed With Positrons

1987 ◽  
Vol 105 ◽  
Author(s):  
Bent Nielsen ◽  
K. G. Lynn ◽  
T. C. Leung ◽  
D. O. Welch ◽  
G. Rubloff
Keyword(s):  
Heat Treatment ◽  
Elevated Temperature ◽  
Positron Annihilation ◽  
Positron Beam ◽  
The State ◽  
Open Volume ◽  
Variable Energy ◽  
Thermally Grown

AbstractThe effects of the heat treatment of Si covered with a thermally-grown ˜50 nm overlayer of SiO2 were probed by means of measurements of positron annihilation characteristics obtained with a variable-energy positron beam. From measurements at elevated temperature (˜500°C) it was observed that positrons implanted overlapping the SiO2/Si interface decay from a state with properties distinctively different from the state in Si and in SiO2. The nature of the annihilation characteristics indicates the presence of open volume defects.

Thermal Donor Removal by Rapid Thermal Annealing: Infrared Absorption

1985 ◽  
Vol 46 ◽  
Author(s):  
Herman J. Stein ◽  
S. K. Hahn ◽  
S. C. Shatas
Keyword(s):  
Excited State ◽  
High Temperature ◽  
Excited States ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Infrared Absorption ◽  
Excited State Absorption ◽  
Thermal Donor ◽  
Oxygen Cluster ◽  
Oxygen Precipitates

AbstractRapid thermal annealing of thermal donors in Si with 10 sec anneal times at temperatures between 600 and 1000 °C has been investigated by infrared absorption at 80 K. Thermal donors A through D, which are identified by excited state absorption, are present in as-grown Czochralski Si; whereas excited states for donors A through F as well as photoionization of thermal donors are observed after extended heating at 450 °C. The temperature required for rapid thermal annealing is lower when only donors A through D are present. Removal of thermal donors A through F by rapid thermal annealing at temperatures > 800°C restores 7 to 8 oxygen atoms to interstitial sites per electricallӯ measured donor removed. This ratio supports oxygen cluster models for thermal donors but does not support previous suggestions that such clusters are embryonic forms of high temperature oxygen precipitates.

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