Interdiffusion in MBE-Grown Symmetrically and Asymmetrically Strained Si/Si1−xGex Superlattices Investigated by Ion Scattering

ABSTRACTThe interdiffusion in MBE-grown Si/Si1−xGex superlattices was measured by Rutherford backscattering spectrometry. The superlattices consisted of 5 periods of 100 !A Si and 100 !A Si1−xGex layers with Ge concentrations, x, between 0.20 and 0.70. Both, asymmetrically strained superlattices, grown on Si(100), as well as symmetrically strained superlattices, grown on relaxed Si1−y.Gey buffer layers were investigated. Rapid thermal annealing in the temperature range between 900°C and 1125°C leads to significant interdiffusion between the individual layers, indicated by a decrease of the amplitudes of the backscattering spectra. Interdiffusion coefficients were deduced using a Fourier algorithm. The interdiffusion coefficients follow an Arrhenius law for a given Ge concentration. The interdiffusivity increases significantly with increasing Ge concentration.

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Defect Reduction in GaAs Epilayers on Si Substrates Using Strained Layer Superlattices

MRS Proceedings ◽

10.1557/proc-91-99 ◽

1987 ◽

Vol 91 ◽

Cited By ~ 9

Author(s):

N. El-Masry ◽

N. Hamaguchi ◽

J.C.L. Tarn ◽

N. Karam ◽

T.P. Humphreys ◽

...

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Buffer Layers ◽

Threading Dislocations ◽

Defect Reduction ◽

Strained Layer ◽

Si Substrates ◽

Density Of Dislocations ◽

Strained Layer Superlattice ◽

Strained Layer Superlattices

ABSTRACTInxGa11-xAs-GaAsl-yPy strained layer superlattice buffer layers have been used to reduce threading dislocations in GaAs grown on Si substrates. However, for an initially high density of dislocations, the strained layer superlattice is not an effective filtering system. Consequently, the emergence of dislocations from the SLS propagate upwards into the GaAs epilayer. However, by employing thermal annealing or rapid thermal annealing, the number of dislocation impinging on the SLS can be significantly reduced. Indeed, this treatment greatly enhances the efficiency and usefulness of the SLS in reducing the number of threading dislocations.

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Influence of Oxygen on the Iridium Silicide Formation by Rapid Thermal Annealing

MRS Proceedings ◽

10.1557/proc-299-325 ◽

1994 ◽

Vol 299 ◽

Cited By ~ 7

Author(s):

M. Fernandez ◽

T. Rodriguez ◽

A. Almendra ◽

J. Jimenez-Leube ◽

H. Wolters

Keyword(s):

Auger Electron Spectroscopy ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Electron Spectroscopy ◽

Auger Electron ◽

Rutherford Backscattering Spectrometry ◽

Rutherford Backscattering ◽

Oxygen Effect ◽

Silicide Formation

AbstractIridium silicide formation by rapid thermal annealing (RTA) in an Ar atmosphere or under vacuum has been investigated. The evolution of the silicide front and the identification of the phases were monitored by Auger Electron Spectroscopy (AES) and Rutherford Backscattering Spectrometry (RBS). Oxygen was incorporated during the RTA process in an Ar atmosphere. The oxygen effect is to slow down the silicide formation and eventually to stop it. In all the cases, the oxygen piled-up at the iridium-iridium silicide interface. No distinguishable phase was formed by RTA in an Ar atmosphere. No oxygen contarsi'nation was detected when the RTA was performed under a vacuum lower than 2×10−5 Torr. In this case Ir1Si1 and Ir1Si1.75 phases were formed.

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Performance improvement of CIGS solar cells with CBD-ZnS buffer layers by light soaking and rapid thermal annealing

2011 37th IEEE Photovoltaic Specialists Conference ◽

10.1109/pvsc.2011.6186185 ◽

2011 ◽

Cited By ~ 1

Author(s):

Chih-Yu Chien ◽

Chia-Hsiang Chen ◽

Chih-Pin Tsai ◽

Jia-Min Shieh ◽

Yu-Jen Hsiao ◽

...

Keyword(s):

Solar Cells ◽

Performance Improvement ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Buffer Layers ◽

Cigs Solar Cells

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Fabrication of C54-TiSi2 Thin Films Using Cathodic Arc Deposition and Rapid Thermal Annealing

MRS Proceedings ◽

10.1557/proc-1052-dd06-29 ◽

2007 ◽

Vol 1052 ◽

Author(s):

Hui Xia ◽

William R. Knudsen ◽

Paul L. Bergstrom

Keyword(s):

Thin Films ◽

Phase Transformation ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Rutherford Backscattering Spectrometry ◽

Substrate Bias ◽

Cathodic Arc Deposition ◽

The Impact ◽

Cathodic Arc ◽

Arc Deposition

AbstractDue to its low electrical resistivity and high thermal stability, C54-TiSi2 thin films can be used in some MEMS application, such as RF MEMS, to reduce RC delay and improve dynamic performance. In this paper, TiSi2 thin films have been prepared for the first time by using cathodic arc deposition to study the impact of energetic ion bombardment on the film microstructure and subsequent C49-C54 phase transformation during annealing. TiSi2 compound was used as the cathode and a substrate bias was varied to control kinetic energy of the ions during the film growth. Rutherford backscattering spectrometry and transmission electron microscopy were utilized to characterize the film composition and microstructure. The composition of the resultant TiSix thin films varies from x=2.4 to x=1.4 when the substrate bias was varied from floating to –200V. The as-deposited TiSix films are amorphous under no substrate heating and a phase separation at nano scale with inhomogeneous distribution of Ti and Si atoms was observed within the amorphous phase. Si atoms are seen to segregate on the boundary of Ti-rich domains and the domain size increased with the substrate bias. For a 90nm-thick TiSi2 film deposited on a SiO2/Si substrate, kinetics of the C49-C54 phase transformation was studied by measuring the change of film resistivity upon rapid thermal annealing. It was found that the C49-C54 phase transition temperature is higher (>900°C) for the arc-deposited TiSi2 thin films compared to evaporated and sputtered films and the activation energy for the transformation was calculated to be 6.1±0.2eV.

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Iridium Silicide Formation by Rapid Thermal Annealing

MRS Proceedings ◽

10.1557/proc-299-313 ◽

1994 ◽

Vol 299 ◽

Cited By ~ 2

Author(s):

T. Rodriguez ◽

H. Wolters ◽

A. Almendra ◽

J. Sanz-Maudes ◽

M.F. Da Silva ◽

...

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Annealing Time ◽

Electron Spectroscopy ◽

Auger Electron ◽

Processing Time ◽

Rutherford Backscattering Spectrometry ◽

Silicide Formation ◽

Furnace Annealing ◽

Short Processing Time

AbstractIridium silicides formation by rapid thermal annealing (RTA) under vacuum at several temperatures in the range of 350 to 650°C has been investigated. The substrates and the silicide films were analyzed by Rutherford backscattering spectrometry (RBS) and Auger electron spectroscopy (AES). At 350°C, no distinguishable phase was detected for 240 seconds of annealing time. At 400°C, for processing time up to 45 seconds only Ir1Si1 was formed, for longer processing time Ir1Si1.75 was formed too. At higher temperatures even for very short processing time, Ir1Si1.75 was formed. Ir, Ir1Si1 and Ir1Si1.75 were present simultaneously if the iridium film was thick enough and the processing time was long enough too. For thin iridium layers, the Ir1Si1 formed was totally converted to Ir1Si1.75, if the annealing time was long enough. Formation rates were observed to be three to five orders of magnitude faster than the reported for furnace annealing.

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Influence of homo-buffer layers and post-deposition rapid thermal annealing upon atomic layer deposition grown ZnO at 100°C with three-pulsed precursors per growth cycle

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2017.05.033 ◽

2017 ◽

Vol 475 ◽

pp. 39-43 ◽

Cited By ~ 2

Author(s):

Yung-Chen Cheng ◽

Kai-Yun Yuan ◽

Miin-Jang Chen

Keyword(s):

Atomic Layer Deposition ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Atomic Layer ◽

Growth Cycle ◽

Buffer Layers ◽

Layer Deposition ◽

Post Deposition

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Study of Ni(Pt) germanosilicides formation on fully-strained Si0.9Ge0.1 and Si0.899Ge0.1C0.001 by Raman Spectroscopy

MRS Proceedings ◽

10.1557/proc-810-c4.2 ◽

2004 ◽

Vol 810 ◽

Author(s):

J. Y. Y. Chaw ◽

K. L. Pey ◽

P. S. Lee ◽

D. Z. Chi ◽

J. P. Liu

Keyword(s):

Raman Spectroscopy ◽

Thermal Annealing ◽

Raman Spectra ◽

Rapid Thermal Annealing ◽

Sharp Increase ◽

Si Substrate ◽

Strained Si ◽

Low Resistivity ◽

Transverse Acoustic ◽

Phonon Peak

ABSTRACTIn this work, Raman spectroscopy was used to study the reaction of pure Ni and Ni(Pt 5 at. %) with fully-strained Si0.9Ge0.1 and Si0.899Ge0.1C0.001. With pure Ni, it was found that the incorporation of 0.1% C in the substrate resulted in out-diffusion of Ge from the germanosilicide film at a lower rapid thermal annealing (RTA) temperature compared to that of pure Ni on Si0.9Ge0.1. This Ge out-diffusion phenomenon is evident from the gradual shift in the NiSi1-wGew (w ≤ x) Raman peak from ∼213 cm−1 to higher wavenumbers, closer to 217 cm−1 as reported for pure Ni/Si, indicating that Ge is being depleted from the film with increasing RTA temperatures. In addition, it was found that severe agglomeration of the germanosilicide film occurred at a lower RTA temperature for the Ni/Si0.899Ge0.1C0.001 system. This corresponds to the observations from the Raman spectra, where a sharp increase in the Si substrate peak at 520 cm−1 was observed, coupled with the appearance of the transverse acoustic (TA)-phonon peak of Si at 301 cm−1. When Pt was introduced into the Ni film, significant improvements were observed for the germanosilicide films on Si0.9Ge0.1 and Si0.899Ge0.1C0.001 substrates, both in terms of Ge out- diffusion and agglomeration. Initial findings show that the addition of Pt promotes the formation of the low resistivity mono-germanosilicide phase at temperatures as low as 300°C.

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