scholarly journals O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2450
Author(s):  
Oumaima Abouzaid ◽  
Hussein Mehdi ◽  
Mickael Martin ◽  
Jérémy Moeyaert ◽  
Bassem Salem ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor ◽  
Lattice Parameter ◽  
Organic Chemical ◽  
Silicon Substrates ◽  
Wafer Level ◽  
Si Substrate ◽  
Si Substrates ◽  
Transmission Electron ◽  
Metal Organic

The epitaxy of III-V semiconductors on silicon substrates remains challenging because of lattice parameter and material polarity differences. In this work, we report on the Metal Organic Chemical Vapor Deposition (MOCVD) and characterization of InAs/GaAs Quantum Dots (QDs) epitaxially grown on quasi-nominal 300 mm Ge/Si(001) and GaAs(001) substrates. QD properties were studied by Atomic Force Microscopy (AFM) and Photoluminescence (PL) spectroscopy. A wafer level µPL mapping of the entire 300 mm Ge/Si substrate shows the homogeneity of the three-stacked InAs QDs emitting at 1.30 ± 0.04 µm at room temperature. The correlation between PL spectroscopy and numerical modeling revealed, in accordance with transmission electron microscopy images, that buried QDs had a truncated pyramidal shape with base sides and heights around 29 and 4 nm, respectively. InAs QDs on Ge/Si substrate had the same shape as QDs on GaAs substrates, with a slightly increased size and reduced luminescence intensity. Our results suggest that 1.3 μm emitting InAs QDs quantum dots can be successfully grown on CMOS compatible Ge/Si substrates.

scholarly journals Density control of InP/GaInP quantum dots grown by metal-organic vapor-phase epitaxy

2018 ◽  
Vol 52 (4) ◽  
pp. 477
Author(s):  
D.V. Lebedev ◽  
N.A. Kalyuzhnyy ◽  
S.A. Mintairov ◽  
K.G. Belyaev ◽  
M.V. Rakhlin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Height Distribution ◽  
Force Microscopy ◽  
Self Organized ◽  
Density Control ◽  
Atomic Force ◽  
Transmission Electron ◽  
Metal Organic

AbstractWe investigated structural and emission properties of self-organized InP/GaInP quantum dots (QD) grown by metal organic chemical vapor deposition using an amount of deposited In from 7 to 2 monolayers (ML). In the uncapped samples, using atomic force microscopy (AFM), we observed lateral sizes of 100–200 nm, together with a bimodal height distribution having maxima at ∼5 and ∼15 nm, which we denoted as QDs of type A and B, respectively; and reduction of the density of the type-B dots from 4.4 to 1.6 μm^–2. The reduction of the density of B-type dots were observed also using transmission electron microscopy of the capped samples. Using single dot low-temperature photoluminescence (PL) spectroscopy we demonstrated effects of Wigner localization for the electrons accumulated in these dots.

scholarly journals Structural and Optical Characteristics ofγ-In2Se3Nanorods Grown on Si Substrates

2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
M. D. Yang ◽  
C. H. Hu ◽  
S. C. Tong ◽  
J. L. Shen ◽  
S. M. Lan ◽  
...  
Keyword(s):  
Room Temperature ◽  
Single Phase ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Bandgap Energy ◽  
Si Substrates ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

This study attempted to grow single-phaseγ-In2Se3nanorods on Si (111) substrates by metal-organic chemical vapor deposition (MOCVD). High-resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) confirmed that the In2Se3nanorods are singularly crystallized in theγphase. The photoluminescence ofγ-In2Se3nanorods at 15 K was referred to as free and bound exciton emissions. The bandgap energy ofγ-In2Se3nanorods at room temperature was determined to be~1.99 eV, obtained from optical absorption.

Growth of Zr Substituted Barium Titanate Thin Films from the Vapor Phase

2002 ◽  
Vol 748 ◽  
Author(s):  
R. Ganster ◽  
S. Hoffmann-Eifert ◽  
R. Waser
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Pulse Mode ◽  
Injection System ◽  
Organic Chemical ◽  
Single Element ◽  
Silicon Substrates ◽  
Si Substrates ◽  
Liquid Precursors ◽  
Metal Organic

ABSTRACTWe report on the growth of Ba(Ti1-xZrx)O3 thin films on Pt(111) / TiO2 / SiO2 / Si substrates by means of metal-organic chemical vapor deposition (MOCVD) using liquid precursors. The MOCVD system consists of an AIXTRON AIX-200 horizontal reactor with a TriJet® vaporizer. In the multi-source injection system the different single element precursor solutions were introduced separately in a pulse mode. The focus of our investigations lies on the correlation between processing conditions, growth rate, and film properties, namely stoichiometry, crystal structure, and surface morphology. Dense, polycrystalline Ba(Ti0.63Zr0.37)O3 films were successfully grown on platinum coated silicon substrates at temperatures around 630°C.

Characterization of Pb(ScTa)1−xTixO3 (x<0.3) Thin Films Grown on LaNiO3 Coated Si by MOCVD

1998 ◽  
Vol 541 ◽  
Author(s):  
C. H. Lin ◽  
H. C. Kuo ◽  
G. E. Stillman ◽  
Haydn Chen
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron ◽  
Metal Organic

AbstractHighly (100) textured pseudo-cubic Pb(ScTa)1−xTixO3 (x=0-0.3) (PSTT) thin films were grown by metal-organic chemical vapor deposition (MOCVD) on LaNiO3 (LNO) electrode buffered Si substrates at 650 °C. The microstructure and chemical uniformity were studied using X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM) and nanoprobe X-ray energy dispersive spectroscopy (EDS). The temperature dependence of dielectric properties and P-E behavior were measured. A shift of Curie temperature of these PST-based thin films due to Ti addition was demonstrated, Furthermore, the pyroelectric properties of these thin films were estimated.

MOCVD Growth of SiC Nanowires Aiming at the Control of their Shape

2007 ◽  
Vol 26-28 ◽  
pp. 657-660 ◽  
Author(s):  
S. Takao ◽  
Hideo Kohno ◽  
Seiji Takeda
Keyword(s):  
Chemical Vapor ◽  
Growth Conditions ◽  
High Yield ◽  
Organic Chemical ◽  
Ni Catalyst ◽  
Silicon Substrates ◽  
Sic Nanowires ◽  
Mocvd Growth ◽  
Transmission Electron ◽  
Metal Organic

We report the growth of silicon carbide (SiC) nanowires on silicon substrates by metal organic chemical vapor deposition (MOCVD) using dimethylvinyllsilane [CH2CHSi(CH3)Cl2] as a source gas and metal catalysts of Ni and Fe. Various growth conditions such as the growth temperature and the pressure of the source gas are examined to achieve high yield growth of SiC nanowires and to control their shape. No SiC nanowires were formed when using Fe. In contrast, by using Ni catalyst, numerous SiC nanowires of about 30 nm thick can be grown at the pressure of the source gas of 30 Pa at 800 °C. Their microstructure is revealed by scanning electron microscopy (SEM) and transmission electron microscope (TEM).

Fabrication and Characterization of Stacked Self-Assembled In0.5Ga0.5As/GaAs Quantum Dots Grown by MOCVD

2014 ◽  
Vol 896 ◽  
pp. 215-218
Author(s):  
Didik Aryanto ◽  
Zulkafli Othaman ◽  
A. Khamim Ismail
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Metal Organic ◽  
Self Assembled

Stacked self-assembled In0.5Ga0.5As/GaAs quantum dots (QDs) were grown using metal organic chemical vapor deposition (MOCVD). Atomic force microscopy (AFM), transmission electron microscopy (TEM) and high resolution X-ray diffraction (HR-XDR) show the effects of stacking on morphology and structure of QDs. Strains due to the buried QDs affect the shape and alignment of the successive layers. Capping of these QDs also determine the quality of the top most QDs structure.

Growth and Characterization of MOCVD Grown Gallium Phosphide Nanostructures on Silicon Substrates

2013 ◽  
Vol 716 ◽  
pp. 281-285 ◽  
Author(s):  
Sisir Chowdhury ◽  
Nripendra N. Halder ◽  
P. Banerji
Keyword(s):  
Band Gap ◽  
Gallium Phosphide ◽  
Chemical Vapor ◽  
Blue Shift ◽  
Organic Chemical ◽  
Silicon Substrates ◽  
Si Substrates ◽  
Metal Organic ◽  
Low Dimensional

Gallium Phosphide (GaP) nanostructures were grown on p-Si substrates by Metal Organic Chemical Vapor Deposition (MOCVD) to study the structure of low dimensional IIIV semiconductor on Si substrates. It is found that at a temperature of 540 °C, nanostructures with diameter 4080 nm and height 515 nm were obtained. The density of the nanostructures was found to be 1014 m-2. The UV-Vis-NIR spectra showed a blue shift of band gap. Photoluminescence measurements also confirmed the band gap enhancement.

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