Photoluminescence Study of Reproduction of Energy Levels in Cdte Films Grown by Pulsed Laser Evaporation and Epitaxy

1992 ◽  
Vol 285 ◽  
Author(s):  
J. M. Wrobel ◽  
C. E. Moffitt ◽  
J. J. Dubowski
Keyword(s):  
Energy Levels ◽  
Pulsed Laser ◽  
Target Material ◽  
Epitaxial Films ◽  
Electronic Energy ◽  
Laser Evaporation ◽  
Energy Structure ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Substrate Temperatures

ABSTRACTA comparison between the electronic energy structure of a target material and epitaxial films obtained from this material by pulsed laser evaporation and epitaxy is presented in the paper. Targets with various impurity concentrations were used in this experiment, and the epitaxial growth took place at various substrate temperatures. Studies of photoluminescence spectra included temperature and power dependencies of spectral features associated with the impurities. Properties of donor-acceptor pair recombination served for the analysis of the differences in the impurity concentration in the layers and the source material.

Pulsed Laser Deposition of Thin-Film Coatings in an Electrostatic Field

2021 ◽  
Vol 410 ◽  
pp. 753-757
Author(s):  
Ruslan V. Chkalov ◽  
Darya G. Chkalova
Keyword(s):  
Electrostatic Field ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Target Material ◽  
Deposition Process ◽  
Laser Evaporation ◽  
Treatment Area ◽  
Coating Deposition ◽  
Thin Film Coatings ◽  
Phase And Chemical Composition

The work is devoted to the problem of thin metal coatings deposition on dielectric substrates using the method of target material pulsed laser evaporation. The main advantage of laser ablation over other methods of coating deposition is the possibility of using practically any material as a target, while the resulting films are characterized by a high correspondence of the phase and chemical composition to the target material. The possibility of using an electrostatic field to improve the efficiency of coating deposition process is considered. Under the action of an electric field formed between the plates of high-voltage electrodes, the ablation products leave the treatment area and settle on the substrate surface. Examples of coatings deposited under various ablation conditions are shown.

scholarly journals The Zn-vacancy related green luminescence and donor–acceptor pair emission in ZnO grown by pulsed laser deposition

RSC Advances ◽  
2015 ◽  
Vol 5 (17) ◽  
pp. 12530-12535 ◽  
Author(s):  
Zilan Wang ◽  
S. C. Su ◽  
M. Younas ◽  
F. C. C. Ling ◽  
W. Anwand ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Green Luminescence ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Related Defect ◽  
Zn Vacancy

A low temperature (10 K) photoluminescence study shows that green luminescence peaking at 2.47 eV and near band edge emission at 3.23 eV from the Zn-vacancy related defect are introduced in undoped ZnO grown by pulsed laser deposition after annealing at 900 °C.

Photoluminescence spectra of undoped and Sm3+-doped BaAl2S4 and BaAl2Se4 single crystals

2001 ◽  
Vol 16 (5) ◽  
pp. 1520-1524 ◽  
Author(s):  
Moon-Seog Jin ◽  
Choong-Il Lee ◽  
Chang-Sun Yoon ◽  
Chang-Dae Kim ◽  
Jae-Mo Goh ◽  
...  
Keyword(s):  
Single Crystals ◽  
Energy Levels ◽  
Photoluminescence Spectra ◽  
Acceptor Pair ◽  
Chemical Transport Reaction ◽  
Ionic Radii ◽  
Transport Reaction ◽  
Broad Emission ◽  
Electron Transitions ◽  
Donor Acceptor

Undoped and Sm3+-doped BaAl2S4 and BaAl2Se4 single crystals were grown by the chemical transport reaction method. The optical energy band gaps of the BaAl2S4 and BaAl2Se4 were found to be 4.10 and 3.47 eV, respectively, at 5 K. In their photoluminescence spectra measured at 5 K, broad emission peaks at 459 and 601 nm appeared in the BaAl2S4 and at 486 and 652 nm in the BaAl2Se4. These emissions are assigned to donor–acceptor pair recombinations. Sharp emission peaks were observed in the Sm3+-doped BaAl2S4 and BaAl2Se4 single crystals at 5 K. Taking into account the ionic radii of the cations and Sm3+, these sharp emission peaks are attributed to the electron transitions between the energy levels of Sm3+ substituting with the Ba site.

Synthesis and Characterization of MoS2 Thin Films Grown by Pulsed Laser Evaporation

1988 ◽  
Vol 140 ◽  
Author(s):  
M. S. Donley ◽  
P. T. Murray ◽  
N. T. McDevitt
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Plasma Temperature ◽  
Laser Evaporation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Plot Analysis ◽  
Glancing Angle ◽  
Substrate Temperatures

AbstractThe growth and characterization of MoS thin films grown by pulsed laser evaporation is investigated. TOF anafysis of the ions evaporated from an MoS2 target indicates that PLE results primarily in the evaporation of atomic Mo and S species; MoxSy clusters were also detected, but were present at a significantly Iower intensity. TOF velocity analysis indicates an effective plasma temperature of 1500K. Stoichiometric MoS2 films were grown at substrate temperatures between room temperature and 500ºC under the above laser conditions. XPS data is used to develop a Wagner chemical state plot. Analysis of the films by Raman spectroscopy and glancing angle x-ray diffraction indicates the films to be crystalline, hexagonal MoS2, with a tendency for basal plane orientation parallel to the substrate.

CuIn1-xGaxSe2 Thin Films Prepared by Co-Evaporation Technique

2013 ◽  
Vol 827 ◽  
pp. 12-15
Author(s):  
Ya Fen Wu ◽  
Jiunn Chyi Lee
Keyword(s):  
Thin Films ◽  
Energy Levels ◽  
Luminescence Spectra ◽  
Photoluminescence Spectra ◽  
Acceptor Pair ◽  
Shallow Acceptor ◽  
Donor Acceptor ◽  
Evaporation Technique ◽  
Donor Acceptor Pair ◽  
Gallium Content

The optical properties of Cu-poor CuIn1-xGaxSe2 thin films with different gallium contents grown by co-evaporated technique were studied. Measurements of photoluminescence and photoreflectance were performed on the samples. The photoluminescence and photoreflectance emission peaks observed around 1.1 eV are attributed to donor-acceptor pair luminescence. These donor-acceptor pair emissions are considered to originate from relatively shallow acceptor and donor energy levels. With increasing gallium content, the emission peaks shift towards higher levels of photon energy, and the linewidths of the luminescence spectra for the samples become wider, which we attributes to the greater statistical disorder between indium and gallium. Moreover, the conversion efficiency of the CuIn1-xGaxSe2-based solar cells is obtained. The measured results coincide with the inference given by the photoluminescence spectra.

Formation of Shallow Energy Levels in Mn+ Implanted GaAs with Extremely Low Background Impurity Concentration

1993 ◽  
Vol 316 ◽  
Author(s):  
Honglie Shen ◽  
Yunosuke Makita ◽  
Akimasa Yamada ◽  
Shigeru Niki ◽  
Tsutomu Iida ◽  
...  
Keyword(s):  
Thermal Activation ◽  
Energy Levels ◽  
Energy Shift ◽  
Manganese Concentration ◽  
Acceptor Pair ◽  
Shallow Acceptor ◽  
Background Impurity ◽  
Peak Energy ◽  
Wide Range ◽  
Donor Acceptor

ABSTRACTManganese ions implantation into ultrapure GaAs layers grown by molecular beam epitaxy were investigated by photoluminescence technique systematically in a wide range of manganese concentration up to 1×1020cm-3. Five shallow emission bands denoted by (Mn°, X), “G”, “G' “ “H” and (D, A)2 are formed in the implanted layers in addition to the well known Mn impurity related emission at ~880nm. With increasing manganese concentration to 1×1019cm-3, “G” exhibits no energy shift, suggesting that “G” is different from the behavior of [g-g] emission that is commonly formed in shallow acceptor (such as C) incorporated ultrapure GaAs. (Mn°, X), “G” and “G' “ present no energy shift with increasing excitation intensity, while “H” and (D, A)2 indicate peak energy shift greatly showing typical donor-acceptor pair characteristics. “G” and (Mn°, X) are found to hold similar radiative origin which is different from “G”. Temperature dependence measurement reveals that emission “G” has a thermal activation energy of 5.4meV.

Growth of Stoichiometric bn Films by Pulsed Laser Evaporation

1988 ◽  
Vol 128 ◽  
Author(s):  
P. T. Murray ◽  
M. S. Donley ◽  
N. T. McDevitt
Keyword(s):  
Thin Films ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Grazing Incidence ◽  
Thermodynamic Calculations ◽  
Laser Evaporation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Substrate Temperatures

ABSTRACTThe feasibility of growing stoichiometric thin films of BN by pulsed laser evaporation has been investigated. Films grown under high vacuum conditions were N-deficient. This result is consistent with thermodynamic calculations, which indicate that B metal formation, with concomitant N2 desorption, is energetically favored over BN formation. Stoichiometric films were grown in NH3 with substrate temperatures of 400, 500, and 1000°C. Analysis of films grown under these conditions by grazing incidence x-ray diffraction indicates the films to be highly oriented, hexagonal BN.

Deposition Of Nanotubes and Nanotube Composites Using Matrix-Assisted Pulsed Laser Evaporation

2000 ◽  
Vol 617 ◽  
Author(s):  
P. K. Wu ◽  
J. Fitz-Gerald ◽  
A. Pique ◽  
D.B. Chrisey ◽  
R.A. McGill
Keyword(s):  
Composite Films ◽  
Pulsed Laser ◽  
Target Material ◽  
Deposition Process ◽  
Vacuum System ◽  
Laser Evaporation ◽  
Naval Research ◽  
Film Material ◽  
The Matrix ◽  
Nanotube Composites

AbstractUsing the Matrix-Assisted Pulsed Laser Evaporation (MAPLE) process developed at the Naval Research Laboratory, carbon nanotubes and carbon nanotube composite thin films have been successfully fabricated. This process involves dissolving or suspending the film material in a volatile solvent, freezing the mixture to create a solid target, and using a low fluence pulsed laser to evaporate the target for deposition inside a vacuum system. The collective action of the evaporating solvent desorbs the polymer/nanotube composite from the target. The volatile solvent is then pumped away leaving the film material on the substrate. By using this technique singlewall- nanotubes (SWN) have been transferred from the target to the substrate. The SWN sustain no observable damage during the deposition process. Using SWN in combination with polymers as the target material, SWN/polystyrene and SWN/polyethylene glycol composite films were made. These films can be deposited on a variety of substrates, e.g., Si, glass, plastic, and metal, using the same target and deposition conditions. SEM micrographs show that the SWN were uniformly distributed in the film. Using a simple contact mask, SWN composite films 20 um diameter patterns can be produced.

Growth of Stoichiometric Bn Films by Pulsed Laser Evaporation

1988 ◽  
Vol 140 ◽  
Author(s):  
P. T. Murray ◽  
M. S. Donley ◽  
N. T. McDevitt
Keyword(s):  
Thin Films ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Grazing Incidence ◽  
Thermodynamic Calculations ◽  
Laser Evaporation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Substrate Temperatures

AbstractThe feasibility of growing stoichiometric thin films of BN by pulsed laser evaporation has been investigated. Films grown under high vacuum conditions were N-deficient. This result is consistent with thermodynamic calculations, which indicate that B metal formation, with concomitant N2 desorption, is energetically favored over BN formation. Stoichiometric films were grown in NH3 with substrate temperatures of 400, 500, and 1000ºC. Analysis of films grown under these conditions by grazing incidence x-ray diffraction indicates the films to be highly oriented, hexagonal BN.

C-Axis Oriented Lithium Niobate Films on (001) Magnesium Oxide by Pulsed Laser Deposition

1995 ◽  
Vol 401 ◽  
Author(s):  
J. L. Lacey ◽  
D. G. Schlom
Keyword(s):  
Lithium Niobate ◽  
Pulsed Laser Deposition ◽  
Orientation Relationship ◽  
Magnesium Oxide ◽  
Pulsed Laser ◽  
Frequency Doubling ◽  
Epitaxial Films ◽  
Laser Deposition ◽  
First Time ◽  
Substrate Temperatures

AbstractFor the first time, epitaxial c-axis oriented lithium niobate (LiNbO3) films were grown on MgO (001) substrates. This orientation is relevant to the monolithic integration of LiNbO3 with GaAs for waveguiding, frequency doubling, and other opto-electronic applications. The epitaxial orientation relationship is (001 ) LiNbO3 parallel to (001) MgO and [100] LiNbO3 parallel to [110] MgO. Four equivalent in-plane orientations were observed, such that the lithium or niobium atoms along the [100] axis of LiNbO3 are bonded to the oxygen atoms on diagonal comers of the MgO unit cell. These epitaxial films were prepared by off-axis pulsed laser deposition at substrate temperatures of 775–800 °C in a 15–50 mTorr mixture of 5% O3 in O2.

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