Pulsed Laser Deposition of Thin-Film Coatings in an Electrostatic Field

2021 ◽  
Vol 410 ◽  
pp. 753-757
Author(s):  
Ruslan V. Chkalov ◽  
Darya G. Chkalova
Keyword(s):  
Electrostatic Field ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Target Material ◽  
Deposition Process ◽  
Laser Evaporation ◽  
Treatment Area ◽  
Coating Deposition ◽  
Thin Film Coatings ◽  
Phase And Chemical Composition

The work is devoted to the problem of thin metal coatings deposition on dielectric substrates using the method of target material pulsed laser evaporation. The main advantage of laser ablation over other methods of coating deposition is the possibility of using practically any material as a target, while the resulting films are characterized by a high correspondence of the phase and chemical composition to the target material. The possibility of using an electrostatic field to improve the efficiency of coating deposition process is considered. Under the action of an electric field formed between the plates of high-voltage electrodes, the ablation products leave the treatment area and settle on the substrate surface. Examples of coatings deposited under various ablation conditions are shown.

Deposition Of Nanotubes and Nanotube Composites Using Matrix-Assisted Pulsed Laser Evaporation

2000 ◽  
Vol 617 ◽  
Author(s):  
P. K. Wu ◽  
J. Fitz-Gerald ◽  
A. Pique ◽  
D.B. Chrisey ◽  
R.A. McGill
Keyword(s):  
Composite Films ◽  
Pulsed Laser ◽  
Target Material ◽  
Deposition Process ◽  
Vacuum System ◽  
Laser Evaporation ◽  
Naval Research ◽  
Film Material ◽  
The Matrix ◽  
Nanotube Composites

AbstractUsing the Matrix-Assisted Pulsed Laser Evaporation (MAPLE) process developed at the Naval Research Laboratory, carbon nanotubes and carbon nanotube composite thin films have been successfully fabricated. This process involves dissolving or suspending the film material in a volatile solvent, freezing the mixture to create a solid target, and using a low fluence pulsed laser to evaporate the target for deposition inside a vacuum system. The collective action of the evaporating solvent desorbs the polymer/nanotube composite from the target. The volatile solvent is then pumped away leaving the film material on the substrate. By using this technique singlewall- nanotubes (SWN) have been transferred from the target to the substrate. The SWN sustain no observable damage during the deposition process. Using SWN in combination with polymers as the target material, SWN/polystyrene and SWN/polyethylene glycol composite films were made. These films can be deposited on a variety of substrates, e.g., Si, glass, plastic, and metal, using the same target and deposition conditions. SEM micrographs show that the SWN were uniformly distributed in the film. Using a simple contact mask, SWN composite films 20 um diameter patterns can be produced.

Low Temperature Growth of Oriented Gallium Nitride using Pulsed Laser Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
Robert Leuchtner ◽  
W. Brock ◽  
Y. Li ◽  
L. Hristakos
Keyword(s):  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Ambient Pressure ◽  
Pulsed Laser ◽  
Target Material ◽  
Deposition Process ◽  
Film Deposition ◽  
Laser Deposition ◽  
Metal Target ◽  
X Ray

ABSTRACTOriented GaN has been successfully grown at low substrate temperatures (∼480°C) on a- and r-planes of sapphire, using the pulsed laser deposition process. We have examined the effects of several deposition parameters on film growth, including substrate temperature (∼50–500°C), ambient pressure (1×10−3 – 10 torr of NH3), and target material (Ga or GaN). The film deposition rate was typically ∼3–4 μm/hr. Film characterization was performed using x-ray diffraction (XRD), optical microscopy, x-ray photoelectron spectrometry (XPS), and atomic force microscopy (AFM). In the case of the Ga metal target, a plasma (∼500V) between the target and substrate was necessary to promote formation of the GaN phase. The ammonia ambient enhanced the nitrogen content in the films compared to vacuum deposition. In general, the GaN target yielded better quality films (smaller rocking curve widths and smoother film morphology) compared to the Ga metal target. These results suggest that pulsed laser deposition is a promising approach to fabricating high quality films of this potentially important semiconducting material.

Photoluminescence Study of Reproduction of Energy Levels in Cdte Films Grown by Pulsed Laser Evaporation and Epitaxy

1992 ◽  
Vol 285 ◽  
Author(s):  
J. M. Wrobel ◽  
C. E. Moffitt ◽  
J. J. Dubowski
Keyword(s):  
Energy Levels ◽  
Pulsed Laser ◽  
Target Material ◽  
Epitaxial Films ◽  
Electronic Energy ◽  
Laser Evaporation ◽  
Energy Structure ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Substrate Temperatures

ABSTRACTA comparison between the electronic energy structure of a target material and epitaxial films obtained from this material by pulsed laser evaporation and epitaxy is presented in the paper. Targets with various impurity concentrations were used in this experiment, and the epitaxial growth took place at various substrate temperatures. Studies of photoluminescence spectra included temperature and power dependencies of spectral features associated with the impurities. Properties of donor-acceptor pair recombination served for the analysis of the differences in the impurity concentration in the layers and the source material.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

{10} edge dislocations in YSZ films grown on (100)MgO by PLD

1994 ◽  
Vol 52 ◽  
pp. 530-531
Author(s):  
Jason R. Heffelfinger ◽  
C. Barry Carter
Keyword(s):  
Thin Films ◽  
Semiconductor Lasers ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Laser System ◽  
Average Energy ◽  
Target Material ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Organic Chemical

Yttria-stabilized zirconia (YSZ) is currently used in a variety of applications including oxygen sensors, fuel cells, coatings for semiconductor lasers, and buffer layers for high-temperature superconducting films. Thin films of YSZ have been grown by metal-organic chemical vapor deposition, electrochemical vapor deposition, pulse-laser deposition (PLD), electron-beam evaporation, and sputtering. In this investigation, PLD was used to grow thin films of YSZ on (100) MgO substrates. This system proves to be an interesting example of relationships between interfaces and extrinsic dislocations in thin films of YSZ.In this experiment, a freshly cleaved (100) MgO substrate surface was prepared for deposition by cleaving a lmm-thick slice from a single-crystal MgO cube. The YSZ target material which contained 10mol% yttria was prepared from powders and sintered to 85% of theoretical density. The laser system used for the depositions was a Lambda Physik 210i excimer laser operating with KrF (λ=248nm, 1Hz repetition rate, average energy per pulse of 100mJ).

Diffusion model for deposition of epitaxial GaAs layers prepared by the MOCVD method

1991 ◽  
Vol 56 (10) ◽  
pp. 2020-2029
Author(s):  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma ◽  
Rudolf Hladina
Keyword(s):  
Experimental Data ◽  
Growth Rate ◽  
Kinetic Model ◽  
Gas Phase ◽  
Substrate Surface ◽  
Deposition Process ◽  
Hydrogen Atmosphere ◽  
Epitaxial Gaas ◽  
Kinetics Of ◽  
Good Agreement

The authors proposed and treated quantitatively a kinetic model for deposition of epitaxial GaAs layers prepared by reaction of trimethylgallium with arsine in hydrogen atmosphere. The transport of gallium to the surface of the substrate is considered as the controlling process. The influence of the rate of chemical reactions in the gas phase and on the substrate surface on the kinetics of the deposition process is neglected. The calculated dependence of the growth rate of the layers on the conditions of the deposition is in a good agreement with experimental data in the temperature range from 600 to 800°C.

Mullite Diffusion Barriers for SiC-C/C Composites Produced by Pulsed Laser Deposition

1998 ◽  
Vol 555 ◽  
Author(s):  
H. Fritze ◽  
A. Schnittker ◽  
T. Witke ◽  
C. Rüscher ◽  
S. Weber ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Target Material ◽  
High Energy ◽  
Single Step ◽  
Laser Deposition ◽  
Reduced Pressure ◽  
Oxidation Rates ◽  
Energy Impact ◽  
Diffusion Parameters

AbstractPulsed Laser Deposition (PLD) allows the ablation of nonconductive and high melting point target materials and the preparation of films with complex composition. High energy impact leads to melting and evaporation of the target material in a single step. In case of mullite ablation, the flux of the metal components is stoichiometric. Under reduced pressure the oxygen content in the layers decreases. However, after a short oxidation treatment, the formation of mullite in the coating is completed, as confirmed by IR spectroscopy and XRD investigations. For a commercial Si-SiC precoated C/C material, the effectiveness of additional PLD mullite layers as outer oxidation protection is tested in the temperature range 773 K < T < 1873 K. Mullite coatings with a thickness of 2.5 pm improve the oxidation behaviour significantly. Because of SiO2 formation at the mullite-SiC interface, all samples exhibited a mass increase upon oxidation. For oxidation durations of three days, only amorphous SiO2 is formed at the mullite-SiC interface. The inward diffusion of oxygen across the outer mullite-containing layer controls the kinetics of the reaction, as was deduced from 18O diffusivity measurements in PLD mullite layers. At temperatures close to the eutectic temperature (1860 K), mullite can seal defects. The calculated oxidation rates resulting from the diffusion parameters in SiO2 and mullite are close to the thermogravimetric data.

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