High Power Broad Area GaInAs/GaAs/GaInP Lasers Grown by CBE for Pumping Er Doped Glasses

1993 ◽  
Vol 300 ◽  
Author(s):  
Ph. Maurel ◽  
J.C. Garcia ◽  
J.P. Hirtz ◽  
E. Vassilakis ◽  
M. Baldy ◽  
...  
Keyword(s):  
Continuous Wave ◽  
Characteristic Temperature ◽  
Laser Diodes ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Chemical Beam Epitaxy ◽  
Large Area ◽  
Group V ◽  
Doped Glasses ◽  
Er Doped

ABSTRACTGaInAs/GaAs/GaInP multiquantum well laser structures have been grown by chemical beam epitaxy (CBE) using conventional sources (hydrides as group V element sources). Large area lasers were photolitographically defined and mounted for continuous wave (CW) measurements. CW output power levels of 600 mW at 25°C are reported from 100 μm wide, 300 μm long laser diodes without any facet treatment. At these levels, the delivered current is 2A, with an associated voltage of less than 1.7 V. The characteristic temperature of the structure is 95 K.The same structures were then grown using tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP). The large area laser diodes were characterized under pulsed conditions. For a 300 μm long cavity, threshold current density of 390 A/cm2 and external quantum efficiency of 0.6 W/A (2 facets) were obtained, demonstrating the suitability of TBP and TBAs as substitutes of arsine and phosphine in chemical beam epitaxy for laser fabrication.

PERFORMANCE ENHANCEMENT OF InGaN-BASED LASER DIODES USING A STEP-GRADED AlxGa1-xN ELECTRON BLOCKING LAYER

2011 ◽  
Vol 20 (03) ◽  
pp. 515-520
Author(s):  
Y. ZHANG ◽  
J.-P. LIU ◽  
T.-T. KAO ◽  
S. KIM ◽  
Y.-C. LEE ◽  
...  
Keyword(s):  
Continuous Wave ◽  
Performance Enhancement ◽  
Laser Diodes ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Device Performance ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Electron Accumulation ◽  
Continuous Wave Operation

A step-graded Al x Ga 1- x N electron blocking layer (EBL) is introduced to the InGaN -based edge-emitting blue-violet laser diode (LD) structure to suppress the undesired built-in interface polarization charges. When compared to a conventional abrupt Al 0.18 Ga 0.82 N EBL design, the step-graded Al x Ga 1- x N EBL design may help reduce the electron accumulation at the edge of the active region and hence improve the quantum efficiency in LD operation. The effects of the step-graded Al x Ga 1- x N EBL on the fabricated device performance are also investigated. LDs with the step-graded Al x Ga 1- x N EBL demonstrated significantly reduced threshold current density and increased slope efficiency under the continuous-wave operation.

Characteristics of InGaN Multiquantum-Well-Structure Laser Diodes

1996 ◽  
Vol 449 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Continuous Wave ◽  
Near Field ◽  
Laser Diodes ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Longitudinal Modes ◽  
Field Patterns ◽  
Cw Operation ◽  
Half Power ◽  
Structure Laser

ABSTRACTThe continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. Longitudinal modes with a mode separation of 0.042 nm were observed under CW operation at RT. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 10 ns and 2 × 1020/cm3, respectively. The beam full width at half-power values for the parallel and the perpendicular near-field patterns were 1.6 µm and 0.8 µm, respectively. Those of the far-field patterns were 6.8° and 33.6°, respectively.

545 nm Room-Temperature Continuous-Wave Operation of BeZnCdSe Quantum-Well Green Laser Diodes with Low Threshold Current Density

2010 ◽  
Vol 3 (9) ◽  
pp. 091201 ◽  
Author(s):  
Jun-ichi Kasai ◽  
Ryouichi Akimoto ◽  
Haruhiko Kuwatsuka ◽  
Toshifumi Hasama ◽  
Hiroshi Ishikawa ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Threshold Current ◽  
Green Laser ◽  
Threshold Current Density ◽  
Continuous Wave Operation ◽  
Low Threshold

scholarly journals Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 2 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Quantum Well ◽  
Carrier Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

scholarly journals Room Temperature CW Operation of GaN-based Blue Laser Diodes by GaInN/GaN optical guiding layers

2000 ◽  
Vol 5 (S1) ◽  
pp. 1-7 ◽  
Author(s):  
Masayoshi Koike ◽  
Shiro Yamasaki ◽  
Yuta Tezen ◽  
Seiji Nagai ◽  
Sho Iwayama ◽  
...  
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Threshold Current ◽  
Crystal Defects ◽  
Blue Laser ◽  
Buffer Layers ◽  
Continuous Wave Laser ◽  
Cw Operation ◽  
First Time

GaN-based short wavelength laser diodes are the most promising key device for a digital versatile disk. We have been improving the important points of the laser diodes in terms of optical guiding layers, mirror facets. The continuous wave laser irradiation at room temperature could be achieved successfully by reducing the threshold current to 60 mA (4 kA/cm2). We have tried to apply the multi low temperature buffer layers to the laser diodes for the first time to reduce the crystal defects.

scholarly journals InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods

Materials ◽  
2020 ◽  
Vol 13 (10) ◽  
pp. 2315
Author(s):  
Alexey E. Zhukov ◽  
Natalia V. Kryzhanovskaya ◽  
Eduard I. Moiseev ◽  
Anna S. Dragunova ◽  
Mingchu Tang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Current Density ◽  
Elevated Temperatures ◽  
Continuous Wave ◽  
Electrical Contact ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Constant Current ◽  
Surface Protection ◽  
Microdisk Lasers

An InAs/InGaAs quantum dot laser with a heterostructure epitaxially grown on a silicon substrate was used to fabricate injection microdisk lasers of different diameters (15–31 µm). A post-growth process includes photolithography and deep dry etching. No surface protection/passivation is applied. The microlasers are capable of operating heatsink-free in a continuous-wave regime at room and elevated temperatures. A record-low threshold current density of 0.36 kA/cm2 was achieved in 31 µm diameter microdisks operating uncooled. In microlasers with a diameter of 15 µm, the minimum threshold current density was found to be 0.68 kA/cm2. Thermal resistance of microdisk lasers monolithically grown on silicon agrees well with that of microdisks on GaAs substrates. The ageing test performed for microdisk lasers on silicon during 1000 h at a constant current revealed that the output power dropped by only ~9%. A preliminary estimate of the lifetime for quantum-dot (QD) microlasers on silicon (defined by a double drop of the power) is 83,000 h. Quantum dot microdisk lasers made of a heterostructure grown on GaAs were transferred onto a silicon wafer using indium bonding. Microlasers have a joint electrical contact over a residual n+ GaAs substrate, whereas their individual addressing is achieved by placing them down on a p-contact to separate contact pads. These microdisks hybridly integrated to silicon laser at room temperature in a continuous-wave mode. No effect of non-native substrate on device characteristics was found.

Sb-Based Mid-Infrared Diode Lasers

2001 ◽  
Vol 692 ◽  
Author(s):  
C. Mermelstein ◽  
M. Rattunde ◽  
J. Schmitz ◽  
S. Simanowski ◽  
R. Kiefer ◽  
...  
Keyword(s):  
Current Density ◽  
Cavity Length ◽  
Diode Lasers ◽  
Characteristic Temperature ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Ridge Waveguide ◽  
Single Element ◽  
Type I ◽  
Waveguide Design

AbstractIn this paper we review recent progress achieved in our development of type-I GaInAsSb/AlGaAsSb quantum-well (QW) lasers with emission wavelength in the 1.74–2.34 μm range. Triple-QW (3-QW) and single-QW (SQW) diode lasers having broadened waveguide design emitting around 2.26 μm have been studied in particular. Comparing the two designs we have find that the threshold current density at infinite cavity length as well as the transparency current density scale with the number of QWs. Maximum cw operating temperature exceeding 50°C and 90°C has been obtained for ridge waveguide lasers emitting above and below 2 μm, respectively. Ridge waveguide diode lasers emitting at 1.94 μm exhibited internal quantum efficiencies in excess of 77%, internal losses of 6 cm−1, and threshold current density at infinite cavity length as low as 121 A/cm2 reflecting the superior quality of our diode lasers, all values recorded at 280 K. A high characteristic temperature TOof 179 K for the threshold current along with a value of T1 = 433 K for the characteristic temperature of the external efficiency have been attained for the 240–280 K temperature interval. Room temperature cw output powers exceeding 1.7 W have been demonstrated for broad area single element devices with highreflection/ antireflection coated mirror facets, mounted epi-side down. The latter result is a proof for the high power capabilities of these GaSb-based mid-ir diode lasers.

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