Vacuum Integrated Fabrication of Buried Heterostructure Edge Emitting Laser Diodes

1993 ◽  
Vol 300 ◽  
Author(s):  
M. Hong ◽  
D. Vahkshoori ◽  
L. H. Grober ◽  
J. P. Mannaerts ◽  
S. N. G. Chu ◽  
...  
Keyword(s):  
Electron Cyclotron Resonance ◽  
Laser Diodes ◽  
Surface Damage ◽  
Near Surface ◽  
Molecular Beam Epitaxial ◽  
Ecr Plasma ◽  
Native Oxides ◽  
Chemical Etch ◽  
Buried Heterostructure

ABSTRACTWe describe an in-situ fabrication process which combines electron cyclotron resonance (ECR) plasma H2 to clean native oxides, ECR SiCl4 to etch anisotropically, a brief Cl2 chemical etch to remove any near surface damage and contamination, and molecular beam epitaxial (MBE) regrowth. We report the first buried heterostructure (BH) AlGaAs/GaAs/InGaAs edge emitting laser diodes fabricated using this in-situ process. The lasers operate in continuous mode without noticeable degradation.

Dry Etching Techniques and Chemistries for III-V Semiconductors

1990 ◽  
Vol 216 ◽  
Author(s):  
S. J. Pearton
Keyword(s):  
Plasma Etching ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Surface Damage ◽  
Dry Etching ◽  
Near Surface ◽  
Lattice Disorder ◽  
Ecr Plasma ◽  
Surface Morphologies

ABSTRACTDry etching of HI-V materials using both Cl-based (CCl2F2, SiCl4, BCl3, Cl2) and CH4/H2 discharges will be reviewed. The etch rates using chlorine-based mixtures are generally faster than those utilizing CH4/H2, but the latter gives smoother surface morphologies for In-containing compounds. The use of microwave (2.45 GHz) electron cyclotron resonance (ECR) discharges minimizes the depth of lattice disorder resulting from dry etching, relative to conventional RF (13.56 MHz) discharges. Recent results on the systematics of ECR plasma etching of both In- and Ga-based III-V semiconductors using CCl2F2/O2 and CH4/H2 mixtures will be discussed, including the determination of the maximum self-biases allowable which do not induce near-surface damage to the semiconductor. A further key issue is the prevention of changes in the surface stoichiometry of materials such as InP, where the lattice constituents may have considerably different volatilities in the particular discharge.

AlGaAs Surface Reconstruction after Cl2 Chemical Etch and Ultra High Vacuum Anneal

1994 ◽  
Vol 340 ◽  
Author(s):  
M. Hong ◽  
J. P. Mannaerts ◽  
L. H. Grober ◽  
F. A. Thiel ◽  
R. S. Freund
Keyword(s):  
Surface Reconstruction ◽  
Electron Cyclotron Resonance ◽  
Secondary Ion Mass Spectrometry ◽  
High Vacuum ◽  
High Energy ◽  
Ultra High Vacuum ◽  
Plasma Etch ◽  
Ecr Plasma ◽  
Chemical Etch

ABSTRACTWe report attaining (3x2) surface reconstruction with streaky reflection high energy electron diffraction (RHEED) patterns on Al0.4Ga0.6As after in-situ Cl2 chemical etch and ultra high vacuum (UHV) anneal. Secondary ion-mass spectrometry (SIMS) analysis at the regrown/etched Al0.4Ga0.6 As interface reveals impurities of O and C in the level of (5±1) × 1012 cm-2 and (3±1) × 1012 cm-2, respectively. These impurity levels are 10 times less than those of Al0.4Ga0.6 As after in-situ electron cyclotron resonance (ECR) plasma etch and UHV anneal without Cl2 chemical etch.

In Situ Diagnostics of Methane/Hydrogen Plasma Interactions with Si(100)

1999 ◽  
Vol 569 ◽  
Author(s):  
H. L. Duan ◽  
Stacey F. Bent
Keyword(s):  
Silicon Surface ◽  
Electron Cyclotron Resonance ◽  
Hydrogen Plasma ◽  
Film Deposition ◽  
Diagnostic Study ◽  
Methane Pressure ◽  
Plasma Interactions ◽  
Ecr Plasma ◽  
Hydrogen Dilution

ABSTRACTMethane/hydrogen plasmas have been reported to be sources both for a-C:H film deposition and for compound semiconductor etching. In this work, an in situ diagnostic study of methane/hydrogen plasma interactions with a silicon surface is carried out, focusing on the effect of hydrogen dilution. A remote electron cyclotron resonance (ECR) plasma using a H2/Ar mixture excites methane gas near a Si(l 00) substrate. In situ multiple internal reflection Fourier transform infrared (MIR-FTIR) spectroscopy is used to probe the surface species at different hydrogen dilution ratios. We find that at low methane pressure without hydrogen dilution, a-C:H films are deposited. With H2 dilution, the results suggests that some sputter/etching of the silicon surface occurs. Hence, methyl groups are identified as potential etchants for silicon materials. The data suggest that there is a competition between etching and deposition chemistry which depends strongly upon the methane pressure and hydrogen ratio in the plasma.

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