Dry Etching of Sol-Gel Pzt

AbstractTwo techniques for dry etching of sol-gel lead zirconate titanate (PZT 52/48) thin films were investigated: reactive ion etching and argon ion milling. Etched profiles were characterized by scanning electron microscopy. For reactive ion etching, a parallel plate etcher was used with HC2ClF4, an environmentally safe etch gas, in a process described by other researchers. Etch rates were measured and compared as a function of electrode shield material (ardel, graphite, alumina) and RF input power (100 to 500 W). These etch rates varied from 10 to 100 nm/min. Reactive ion etched sidewall angles 12° off normal were consistently produced over a wide range of RF powers and etch times, but overetching was required to produce a clean sidewall. For argon ion milling, a 300 mA/500 V beam 40° off normal to the substrate operating in a 72 mPa argon pressure was used. These ion milling conditions produced an etch rate of 250 nm/min with a sidewall slope angle of about 70°. The ion milling etch rate for sol-gel PZT was significantly faster than rates reported for bulk PZT. The 500 nm thick PZT films used in this study were prepared by the sol-gel process that used methoxyethanol solvent, spin coating on t/Ti/SiO2 silicon substrates, and rapid thermal annealing for 30 s at 650 °C for crystallization of the perovskite phase.

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Reactive ion Etching of PbZrxTi1−xO3 and Ruo2 Tein Films

MRS Proceedings ◽

10.1557/proc-310-133 ◽

1993 ◽

Vol 310 ◽

Cited By ~ 4

Author(s):

Dilip P. Vijay ◽

Seshu B. Desu ◽

Wei Pan

Keyword(s):

Thin Films ◽

Solid Solution ◽

Etch Rate ◽

Reactive Ion Etching ◽

Gas Pressure ◽

Limiting Factor ◽

Rf Power ◽

Ion Etching ◽

Pzt Thin Films ◽

Etch Rates

AbstractIn this work, we have identified a suitable etch gas (CCI2,F2 ) for Reactive Ion Etching (RIE) of PZT thin films on RuO2 electrodes. The etch rate and anisotropy have been studied as a function of etching conditions. The effect of gas pressure, RF power and O2 concentration on the etch rate have been determined. It was found that ion bombardment effects are primarily responsible for the etching of both PZT and RuO2 thin films. Etch rates of the order of 20-30 nm/min were obtained for PZT thin films under low gas pressure and high RF power conditions. The etch residues and the relative etch rates of the components of the PZT solid solution were determined using XPS. The results show that the etching of PbO is the limiting factor in the etch process. For RuO2 thin films, etch rates of the order of 8-10 nm/min were obtained when O2 was added to the etch gas.

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Ion-Beam Milling Materials with Applications to TEM Specimen Preparation

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100163794 ◽

1996 ◽

Vol 54 ◽

pp. 266-267

Author(s):

Ron Anderson

Keyword(s):

Glow Discharge ◽

Ion Beam ◽

Reactive Ion Etching ◽

Dry Etching ◽

Surface Cleaning ◽

Specimen Preparation ◽

Ion Milling ◽

Physical Sciences ◽

Ion Etching ◽

Ion Beam Etching

For the last thirty years, ion milling has been an indispensable part of preparing TEM specimens in the physical sciences. While great improvements have been made in our ability to thin most materials to the point where ion milling may not be a requirement, there will still be a need to utilize ion milling to clean and polish specimens and to provide small amounts of incremental thinning as needed. Thanks mainly to the work of Bama we now understand a great deal about the physics of ion milling. We also benefit from the works of a number of investigators who have studied the artifacts produced by ion milling (see Barber for a review).Ion milling is a subset of the topic “dry etching,” which consists of two major categories: glow discharge methods and ion beam methods. Glow discharge methods include plasma etching, reactive ion etching, and glow discharge sputter etching. These techniques have little application in TEM specimen preparation aside from surface cleaning. The reactive ion etching literature is a source for suggesting gas/specimen combinations to perform chemically-assisted ion beam etching (CAIBE), to be discussed below. The other major dry etching category, ion beam methods, includes ion milling, reactive ion beam etching, and CAIBE.

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Reactive Ion Etching of Copper with SiCl4 and CCl2F2

MRS Proceedings ◽

10.1557/proc-201-129 ◽

1990 ◽

Vol 201 ◽

Cited By ~ 2

Author(s):

B. J. Howard ◽

S. K. Wolterman ◽

W. J. Yoo ◽

B. Gittleman ◽

CH. SteinbrÜchel

Keyword(s):

High Temperature ◽

Substrate Temperature ◽

Amorphous Carbon ◽

Reactive Ion Etching ◽

Dry Etching ◽

Gas Composition ◽

Plasma Parameters ◽

Ion Etching ◽

Etch Rates ◽

Interconnect Material

AbstractCopper may become an alternative to aluminum as an interconnect material in future multilevel metallization schemes if it is possible to pattern Cu by dry etching in a manufacturable process. Here we report results on the reactive ion etching of Cu in SiCl4 /Ar, SiCl4/N2, and CCl2F2/Ar plasmas. Etch rates have been investigated as a function of various plasma parameters, such as gas composition, pressure, etc., and substrate temperature. We have obtained etch rates as high as 850 Å /min with SiCl4/N2 and a substrate temperature of ∼ 200 ° C. Also, it appears feasible to pattern Cu anisotropically using either polyimide or amorphous carbon as a high-temperature etch mask.

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Reactive ion etching of sol-gel deposited lead zirconate titanate (pzt) thin films in sf6 plasmas

Integrated Ferroelectrics ◽

10.1080/10584580108015666 ◽

2001 ◽

Vol 37 (1-4) ◽

pp. 67-74 ◽

Cited By ~ 1

Author(s):

George McLane ◽

Ronald Polcawich ◽

Jeffrey Pulskamp ◽

Brett Piekarski ◽

Madan Dubey ◽

...

Keyword(s):

Thin Films ◽

Lead Zirconate Titanate ◽

Sol Gel ◽

Reactive Ion Etching ◽

Lead Zirconate ◽

Ion Etching ◽

Pzt Thin Films ◽

Zirconate Titanate

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Effects of Electrode Spacing on Reactive Ion Etching of 4H-SiC

MRS Proceedings ◽

10.1557/proc-622-t8.8.1 ◽

2000 ◽

Vol 622 ◽

Author(s):

Janna R. Bonds ◽

Geoff E. Carter ◽

Jeffrey B. Casady ◽

James D. Scofield

Keyword(s):

Etch Rate ◽

Smooth Surface ◽

Reactive Ion Etching ◽

Electrode Spacing ◽

Ion Etching ◽

Plasma Peak ◽

Etch Rates

ABSTRACT4H-SiC was selectively etched in a Reactive Ion Etch (RIE) system using a nickel mask. The power, pressure, and electrode spacing were varied within a RF generated SF6:O2 (1:2) plasma. Peak etch rates of up to 2600 Aring;/min. were obtained at a pressure of 350 mT, power of 90 W (2 W/cm2), and electrode spacing of 3.180 cm. Etches were all residue-free, although power levels above 60 W (1.36 W/cm2) resulted in the SiC surface being roughened, which limited smooth surface etch capability to 2000 Aring;/min. When comparing electrode spacing from 3.180 cm to 1.270 cm, the 3.180 cm spacing was found to have the highest etch rate at pressures ranging from 250 mT to 500 mT.

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Reactive ion etching of TiN, TiAlN, CrN and TiCN Films in CF4/O2 and CHF3/O2 Plasmas

MRS Proceedings ◽

10.1557/proc-0890-y08-13 ◽

2005 ◽

Vol 890 ◽

Author(s):

Patrick W. Leech ◽

G. K. Reeves ◽

A. S. Holland

Keyword(s):

Flow Rate ◽

Etch Rate ◽

Power Flow ◽

Reactive Ion Etching ◽

Hard Coatings ◽

Ion Etching ◽

Flat Surfaces ◽

Physical Sputtering ◽

Polymer Deposition ◽

Etch Rates

AbstractThe reactive ion etching of a range of hard coatings (TiN, TiCN, CrN and TiAlN) has been examined as a function of rf power, flow rate and pressure. The films were deposited by filtered arc deposition (TiN, TiAlN and CrN) or low energy electron beam (TiCN) on polished disc substrates of M2 tool steel. The flat surfaces were lithographically patterned with a grating structure (∼1 μm pitch). The TiN and TiCN layers have shown significantly higher etch rates (100-250 nm/min) than the CrN and TiAlN (∼5 nm/min) coatings. These regimes of higher and low etch rate were identified as ion-enhanced chemical etching and physical sputtering, respectively. In CF4/O2 plasma, the etch rate of the TiN and TiCN layers increased with rf power, flow rate and pressure which were parameters known to enhance the density of active fluorine species. The etch rates of TiN and TiCN layers were higher in CF4/O2 plasma than in CHF3/O2 gases in which polymer deposition was produced at pressure ≥ 35 mTorr.

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Simulation of Dry Etching Processes for III-V Compounds Technology Applications

MRS Proceedings ◽

10.1557/proc-324-471 ◽

1993 ◽

Vol 324 ◽

Cited By ~ 1

Author(s):

K. Ketata ◽

S. Koumetz ◽

M. Ketata ◽

R. Debrie

Keyword(s):

Computer Simulation ◽

Etch Rate ◽

Plasma Reactor ◽

Reactive Ion Etching ◽

Dry Etching ◽

Simulation Technique ◽

Simulation Program ◽

Ion Etching ◽

Technology Applications ◽

Computer Simulation Program

AbstractThis work introduces a new dry etching simulation technique of the sputtering component of Reactive Ion Etching (R.I.E.) and presents experimental verifications for GaAs. The final objective is to correlate the etch rate to the plasma reactor parameters, which can be incorporated into a computer-simulation program.

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Reactive Ion Etching Induced Surface Damage of Silicon Carbide

Materials Science Forum ◽

10.4028/www.scientific.net/msf.483-485.765 ◽

2005 ◽

Vol 483-485 ◽

pp. 765-768 ◽

Cited By ~ 3

Author(s):

Jun Hai Xia ◽

E. Rusli ◽

R. Gopalakrishnan ◽

S.F. Choy ◽

Chin Che Tin ◽

...

Keyword(s):

Surface Roughness ◽

Reactive Ion Etching ◽

Surface Damage ◽

Textured Surface ◽

Rf Power ◽

Power Devices ◽

Ion Etching ◽

Maximum Value ◽

Wide Range ◽

Coarse Surface

Reactive ion etching of SiC induced surface damage, e.g., micromasking effect induced coarse and textured surface, is one of the main concerns in the fabrication of SiC based power devices [1]. Based on CHF3 + O2 plasma, 4H-SiC was etched under a wide range of RF power. Extreme coarse and textured etched surfaces were observed under certain etching conditions. A super-linear relationship was found between the surface roughness and RF power when the latter was varied from 40 to 160 W. A further increase in the RF power to 200 W caused the surface roughness to drop abruptly from its maximum value of 182.4 nm to its minimum value of 1.3 nm. Auger electron spectroscopy (AES) results revealed that besides the Al micromasking effect, the carbon residue that formed a carbon-rich layer, could also play a significant role in affecting the surface roughness. Based on the AES results, an alternative explanation on the origin of the coarse surface is proposed.

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Reactive Ion Etching of GaSb, (Ai,Ga)Sb, and InAs for Novel Device Applications.

MRS Proceedings ◽

10.1557/proc-216-251 ◽

1990 ◽

Vol 216 ◽

Cited By ~ 1

Author(s):

D.C. La Tulipe ◽

D.J. Frank ◽

H. Munekata

Keyword(s):

Etch Rate ◽

Reactive Ion Etching ◽

Scanning Electron Micrographs ◽

Electrical Characteristics ◽

Ion Etching ◽

Novel Device ◽

Physical Sputtering ◽

Chlorine Gas ◽

Device Applications ◽

Scanning Electron

ABSTRACT-Although a variety of novel device proposals for GaSb/(Al,Ga)Sb/InAs heterostructures have been made, relatively little is known about processing these materials. We have studied the reactive ion etching characteristics of GaSb, (AI,Ga)Sb, and InAs in both methane/ hydrogen and chlorine gas chemistries. At conditions similar to those reported elsewhere for RIE of InP and GaAs in CH4/H2, the etch rate of (AI,Ga)Sb was found to be near zero, while GaSb and InAs etched at 200Å/minute. Under conditions where the etch mechanism is primarily physical sputtering, the three compounds etch at similar rates. Etching in Cl2 was found to yield anisotropic profiles, with the etch rate of (AI,Ga)Sb increasing with Al mole fraction, while InAs remains unetched. Damage to an InAs “stop layer” was investigated by sheet resistance and mobility measurements. These etching techniques were used to fabricate a novel InAs-channel FET composed of these materials. Several scanning electron micrographs of etching results are shown along with preliminary electrical characteristics.

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