Epitaxial Growth of Rare Earth Silicides on (111)Si

1993 ◽  
Vol 312 ◽  
Author(s):  
T. L. Lee ◽  
W. D. Sue ◽  
J. H. Lin ◽  
C. H. Luo ◽  
L. J. Chen
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Diffraction Pattern ◽  
Solid Phase ◽  
Stacking Faults ◽  
Metal Thin Films ◽  
Step Structure ◽  
Displacement Vectors ◽  
Transmission Electron ◽  
Long Time

AbstractEpitaxial YSi2-x, TbSi2-x, and ErSi2-x. have been grown on (111)Si by solid phase epitaxy in ultrahigh vacuum deposited rare earth (RE) metal thin films on silicon. The evolution of vacancy ordering and defect structure in epitaxial RE silicide thin films on (111)Si have been studied by both conventional and high resolution transmission electron microscopy.Additional superlattice spots located at 1/3 <2110> in the diffraction pattern of RESi2-x, are attributed to the formation of ordered vacancy in the Si sublattice planes. The splitting of extra diffraction spots is correlated to the formation of an out-of--step structure. Streakings of the split diffraction spots in the diffraction pattern are attributed to the presence of an out-of-step structure with a range of M values. For YSi2-x and ErSi2-x, the M was found to settle down to a constant value after high temperature and/or long time annealing. For TbSi2-x, M is equal to 5 throughout the annealing.Planar defects in RESi2-x films were analyzed to be stacking faults on {1010} planes with 1/6<1213> displacement vectors. The size and density of stacking faults were found to increase and decrease, respectively, with annealing temperature and/or annealing time.

Epitaxial YSi2−x and ErSi2−x Thin Films on (111) Silicon

1992 ◽  
Vol 263 ◽  
Author(s):  
T.L. Lee ◽  
W.D. Su ◽  
L.J. Chen
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Metal Thin Films ◽  
Step Structure ◽  
Displacement Vectors ◽  
Transmission Electron ◽  
Vacancy Ordering ◽  
Deposited Metal ◽  
Long Time ◽  
Diffraction Patterns

ABSTRACTEpitaxial RSi2−x (R = Y and Er) has been grown on (111)Si by solid phase epitaxy in ultrahigh vacuum deposited metal thin films on silicon. The evolution of vacancy ordering and defect structure in epitaxial YSi2−x. and ErS2−x thin films on (111)Si have been studied by both conventional and high resolution transmission electron microscopy.Superlattice spots located at ⅓{2110} in [0001]RS2−x, diffraction patterns are attributed to the formation of ordered vacancy structure in the Si sublattice planes. The splitting of extra diffraction spots is correlated to the formation of an out-of-step structure. Streaking of the split diffraction spots in the diffraction pattern is attributed to the presence of an out-of-step structure with a range of M values. The M was found to settle down to a fixed value after high temperature and/or long time annealing.Planar defects in RSi2™x films were analyzed to be stacking faults on {1010} planes with ⅙<1213> displacement vectors. Computer simulation was carried out to model the atomic structure of stacking fault in YS2−x-. thin films. The simulated images are seen to match rather well with experimental images taken under two different values of defocus.

Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

1991 ◽  
Vol 49 ◽  
pp. 562-563
Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Thin Films ◽  
Diffraction Pattern ◽  
Annealing Temperature ◽  
Lattice Mismatch ◽  
Si Substrate ◽  
Metal Thin Films ◽  
Transmission Electron ◽  
Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

Kinetics of Vacancy Ordering in YSi2−x Thin Film on Silicon

1991 ◽  
Vol 230 ◽  
Author(s):  
T. L. Lee ◽  
L. J. Chen ◽  
F. R. Chen
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Annealing Temperature ◽  
Stacking Faults ◽  
Step Structure ◽  
Transmission Electron ◽  
Vacancy Ordering ◽  
Kinetics Of

AbstractHigh resolution and conventional transmission electron microscopy have been applied to study the interfacial reaction of yttrium thin films on Si. Epitaxial Ysi2−x film was grown on (111)Si by rapid thermal annealing at 500–1000 °C. The orientation relationship between yttrium silicide and (111)Si was determined to be [0001]Ysi2−x//[111]Si and (1010)Ysi2−x//(112)Si. The vacancies in the Ysi2−x film were found to be ordered in the Si sublattice plane and form an out-of-step structure. The range of M values of the out-of-step structure was found to narrow with annealing temperature and time. Defects along specific crystallographic directions were observed and analyzed to be intrinsic stacking faults.

Structural studies of diamond thin films grown from dc arc plasma

1997 ◽  
Vol 12 (10) ◽  
pp. 2533-2542 ◽  
Author(s):  
L. C. Nistor ◽  
J. Van Landuyt ◽  
V. G. Ralchenko ◽  
A. A. Smolin ◽  
K. G. Korotushenko ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Arc Discharge ◽  
Stacking Faults ◽  
Argon Laser ◽  
Arc Plasma ◽  
Structural Studies ◽  
Transmission Electron ◽  
Diamond Thin Films ◽  
Dc Arc

Diamond thin films grown from a dc-arc discharge in CH4/H2 mixtures on Si wafers were examined by transmission electron microscopy and Raman spectroscopy. This deposition method provides good diamond crystallinity at high CH4 concentrations (3%–9%). Seeding the substrate with 5 nm diamond particles at a density of 2 × 1012 cm−1 followed by argon laser irradiation to reduce their agglomeration gives, just after starting deposition, a density of growth centers of 1010cm−2. At 3% CH4 concentration the film grows with almost perfect crystallites. Richer CH4 mixtures (5% and 9%) produce crystallites with twins and stacking faults. An amorphous 20–70 nm SiC interlayer is present at these CH4 concentrations, which was not observed at 3% CH4. Amorphous sp3- and sp2-bonded carbon was detected by Raman spectroscopy at all CH4 concentrations and correlated with TEM data.

HRTEM Study of the Extended Defect Structure in Epitaxial Ba0.3Sr0.7TiO3 Thin Films Grown on (001) LaAlO3

2002 ◽  
Vol 751 ◽  
Author(s):  
C.J. Lu ◽  
L.A. Bendersky ◽  
K. Chang ◽  
I. Takeuchi
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Defect Structure ◽  
Stacking Faults ◽  
Threading Dislocations ◽  
Extended Defect ◽  
Displacement Vectors ◽  
Transmission Electron ◽  
First Time ◽  
Dislocation Dissociation

ABSTRACTThe defect structure of a 350-nm-thick epitaxial Ba0.3Sr0.7TiO3 thin film grown on (001) LaAlO3 has been investigated using conventional and high-resolution transmission electron microscopy. The predominant defects in the film are threading dislocations (TDs) with Burgers vectors b = <100> and <110>. A high density of extended stacking faults (SFs) with displacement vectors R = (1/2)<110> were also observed in the near-interface region of the film. The faults are associated with dissociated dislocations and partial halfloops. Some findings about dislocation dissociation and the atomic structure of the (1/2)<110> faults are observed for the first time in perovskites to our knowledge. The mechanisms for the generation, dissociation and evolution of the TDs as well as for the formation mechanism of the SFs are discussed.

Characterization of pulsed laser deposited MoS2 by transmission electron microscopy

1993 ◽  
Vol 8 (11) ◽  
pp. 2933-2941 ◽  
Author(s):  
S.D. Walek ◽  
M.S. Donley ◽  
J.S. Zabinski ◽  
V.J. Dyhouse
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Solid Phase ◽  
Analytical Electron Microscopy ◽  
Pulsed Laser ◽  
Cross Sectional ◽  
Aerospace Applications ◽  
Transmission Electron ◽  
Novel Method

Molybdenum disulfide is a technologically important solid phase lubricant for vacuum and aerospace applications. Pulsed laser deposition of MoS2 is a novel method for producing fully dense, stoichiometric thin films and is a promising technique for controlling the crystallographic orientation of the films. Transmission electron microscopy (TEM) of self-supporting thin films and cross-sectional TEM samples was used to study the crystallography and microstructure of pulsed laser deposited films of MoS2. Films deposited at room temperature were found to be amorphous. Films deposited at 300 °C were nanocrystalline and had the basal planes oriented predominately parallel to the substrate within the first 12–15 nm of the substrate with an abrupt upturn into a perpendicular (edge) orientation farther from the substrate. Spherically shaped particles incorporated in the films from the PLD process were found to be single crystalline, randomly oriented, and less than about 0.1 μm in diameter. A few of these particles, observed in cross section, had flattened bottoms, indicating that they were molten when they arrived at the surface of the growing film. Analytical electron microscopy (AEM) was used to study the chemistry of the films. The x-ray microanalysis results showed that the films have the stoichiometry of cleaved single crystal MoS2 standards.

Structure and Chemistry across Interfaces at Nanoscale of a Ge Quantum Well Embedded within Rare Earth Oxide Layers

2011 ◽  
Vol 17 (5) ◽  
pp. 759-765 ◽  
Author(s):  
Tanmay Das ◽  
Somnath Bhattacharyya
Keyword(s):  
Rare Earth ◽  
Solid Phase ◽  
Rare Earth Oxide ◽  
Dark Field ◽  
X Ray ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Annular Dark Field ◽  
Electron Energy Loss ◽  
Field Imaging

AbstractStructure and chemistry across the rare earth oxide-Ge interfaces of a Gd2O3-Ge-Gd2O3 heterostructure grown on p-Si (111) substrate using encapsulated solid phase epitaxy method have been studied at nanoscale using various transmission electron microscopy methods. The structure across both the interfaces was investigated using reconstructed phase and amplitude at exit plane. Chemistry across the interfaces was explored using elemental mapping, high-angle annular dark-field imaging, electron energy loss spectroscopy, and energy dispersive X-ray spectrometry. Results demonstrate the structural and chemical abruptness of both the interfaces, which is most essential to maintain the desired quantum barrier structure.

Sign in / Sign up

Export Citation Format

Share Document