Kinetics of Vacancy Ordering in YSi2−x Thin Film on Silicon
Keyword(s):
AbstractHigh resolution and conventional transmission electron microscopy have been applied to study the interfacial reaction of yttrium thin films on Si. Epitaxial Ysi2−x film was grown on (111)Si by rapid thermal annealing at 500–1000 °C. The orientation relationship between yttrium silicide and (111)Si was determined to be [0001]Ysi2−x//[111]Si and (1010)Ysi2−x//(112)Si. The vacancies in the Ysi2−x film were found to be ordered in the Si sublattice plane and form an out-of-step structure. The range of M values of the out-of-step structure was found to narrow with annealing temperature and time. Defects along specific crystallographic directions were observed and analyzed to be intrinsic stacking faults.
1991 ◽
Vol 49
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pp. 562-563
2010 ◽
Vol 638-642
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pp. 2938-2943
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1989 ◽
Vol 4
(4)
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pp. 755-758
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2015 ◽
Vol 6
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pp. 336-342
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Microstructure of polycrystalline near epitaxial (100) and (111) pyrochlore on A (100) MgO Substrate
1990 ◽
Vol 48
(4)
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pp. 1062-1063