Enhancement of Gold on n-InGaAs Schottky Barrier Height by Using a thin p-InP Layer
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ABSTRACTIn this study, we demonstrate the enhancement of n-In0.53Ga0.47A s Schottky barrier height by using a thin (300-1800 Å) p-InP surface layer. An increase in the barrier height of 0.46 eV, making the total barrier height 0.66 eV, was obtained in a Au/p-InP/n-InGaAs structure, resulting in a great reduction of leakage currents. Results of the electrical measurements are summarized in table 1. The barrier height of n- In0.53Ga0.47As was increased from 0.2 eV to 0.66 eV when a 1200-Å-thick p-InP surface layer was employed.
2010 ◽
Vol 645-648
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pp. 893-896
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2015 ◽
Vol 36
(6)
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pp. 597-599
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2009 ◽
Vol 404
(8-11)
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pp. 1558-1562
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