Preparation of Powders and thin Films of Complex Oxides From Metal Alkoxides

1994 ◽  
Vol 346 ◽  
Author(s):  
M.I. Yanovskaya ◽  
N.M. Kotova ◽  
I.E. Obvintseva ◽  
E.P. Turevskaya ◽  
N.Ya. Turova ◽  
...  
Keyword(s):  
Thin Films ◽  
Barium Titanate ◽  
Solid Solutions ◽  
High Purity ◽  
Complex Oxides ◽  
Silicon Substrates ◽  
Metal Alkoxides

ABSTRACTPreparation of complex oxides in the form of powders and thin films from metal alkoxides is discussed. Most attention is paid to ferroelectric and related materials ‐ complex titanates and zirconates. Techniques for preparation of high‐purity morphologically homogeneous powders Ti2, ZrO2 barium titanate and BaTiO3‐based solid solutions, MgTiO3, Bi2WO6, Bi2MoO6 are proposed and discussed wilh respect to their application in ceramics technology. The solutions prepared electrochemically in methoxyethanol were widely used for formation of thin films, e.g. Y2O3‐stabilized ZrO2 and ρζγ solid solutions on Pt‐coated silicon substrates.

scholarly journals Hysteresis-Free Piezoresponse in Thermally Strained Ferroelectric Barium Titanate Films

2021 ◽  
Vol 2 (1) ◽  
pp. 17-23
Author(s):  
Marina Tyunina ◽  
Jan Miksovsky ◽  
Tomas Kocourek ◽  
Alexandr Dejneka
Keyword(s):  
Thin Films ◽  
Barium Titanate ◽  
Piezoelectric Coefficient ◽  
Thermal Strain ◽  
Modern Technology ◽  
Silicon Substrates ◽  
Interferometric Technique ◽  
Double Beam ◽  
Out Of Plane ◽  
Static Polarization

Modern technology asks for thin films of sustainable piezoelectrics, whereas electro-mechanical properties of such films are poorly explored and controlled. Here, dynamic and quasi-static polarization, dielectric, and piezoelectric responses were experimentally studied in thin-film stacks of barium titanate sandwiched between electrodes and grown on top of strontium titanate substrate. Accurate piezoelectric characterization was secured by using double beam interferometric technique. All out-of-plane responses were found to be hysteresis-free. Effective piezoelectric coefficient ~50 pm/V and linear strain-voltage characteristic were achieved. The observed behavior was ascribed to field induced out-of-plane polarization, whereas spontaneous polarization is in-plane due to in-plane tensile thermal strain. Hysteresis-free linear piezoresponse was anticipated in thin films on commercial silicon substrates, enabling large thermal strain.

Finite-Element Modeling and Quantitative Measurement Using Scanning Microwave Microscopy to Characterize Dielectric Films

2018 ◽  
Author(s):  
K. A. Rubin ◽  
W. Jolley ◽  
Y. Yang
Keyword(s):  
Thin Films ◽  
Dielectric Film ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Fem Modeling ◽  
Dielectric Thin Films ◽  
Microwave Microscopy ◽  
Scanning Microwave Microscopy ◽  
Low K

Abstract Scanning Microwave Impedance Microscopy (sMIM) can be used to characterize dielectric thin films and to quantitatively discern film thickness differences. FEM modeling of the sMIM response provides understanding of how to connect the measured sMIM signals to the underlying properties of the dielectric film and its substrate. Modeling shows that sMIM can be used to characterize a range of dielectric film thicknesses spanning both low-k and medium-k dielectric constants. A model system consisting of SiO2 thin films of various thickness on silicon substrates is used to illustrate the technique experimentally.

Pseudo-C11b Phase Formation of Titanium Disilicide During the C49 to C54 Transition

1997 ◽  
Vol 481 ◽  
Author(s):  
Patrick L. Smith ◽  
Richard Ortega ◽  
Bill Brennan
Keyword(s):  
Thin Films ◽  
Plane Wave ◽  
Intermediate Phase ◽  
Unit Cell ◽  
Silicon Substrates ◽  
Unit Cell Parameters ◽  
Titanium Disilicide ◽  
Cell Parameters ◽  
Chemical Signatures ◽  
Pseudo Potential

ABSTRACTThe formation of TiSi2 thin films using the SALICIDE process on doped and undoped silicon substrates was studied. XRD TEM, AES, RBS and four probe Rs were used to characterize the material. Unit cell parameters and energetics were determined. Results confirm electrical and chemical signatures consistent with the known C49 conversion to C54. However, XRD indicated a structurally different intermediate phase occurs during the C49 to C54 transformation. Modeling was performed based on C11b structure (14/mmm) type, with the Ti and Si atoms arranged similarly to those in MoSi2. The unit cell was determined to be a = 4.428 Å, b = 4.779 Å, c = 9.078 Å with a Fmmm space group and total pseudo-potential plane wave calculations based on crystallographic simulations of −103.96 ev/Atom.

Low-energy femtosecond pulsed laser deposition of cerium (IV) oxide thin films on silicon substrates

2021 ◽  
pp. 126323
Author(s):  
Joseph A. De Mesa ◽  
Angelo P. Rillera ◽  
Melvin John F. Empizo ◽  
Nobuhiko Sarukura ◽  
Roland V. Sarmago ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Low Energy ◽  
Laser Deposition ◽  
Silicon Substrates ◽  
Oxide Thin Films ◽  
Femtosecond Pulsed Laser

Microwave Absorbing Ferrite Thin Films for Microwave Heating of Microstructured Reactors

2009 ◽  
Vol 1222 ◽  
Author(s):  
Pengzhao Gao ◽  
Evgeny V. Rebrov ◽  
Jaap C. Schouten ◽  
Richard Kleismit ◽  
John Cetnar ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Microwave Heating ◽  
Near Field ◽  
Coplanar Waveguide ◽  
Sol Gel ◽  
Microwave Cavity ◽  
Silicon Substrates ◽  
Microwave Microscopy ◽  
Zn Ferrite

AbstractNanocrystalline Ni0.5Zn0.5Fe2O4 thin films have been synthesized with various grain sizes by sol–gel method on polycrystalline silicon substrates. The morphology and microwave absorption properties of the films calcined in the 673–1073 K range were studied by using XRD, AFM, near–field evanescent microwave microscopy, coplanar waveguide and direct microwave heating measurements. All films were uniform without microcracks. The increase of the calcination temperature from 873 to 1073 K and time from 1 to 3h resulted in an increase of the grain size from 12 to 27 nm. The complex permittivity of the Ni-Zn ferrite films was measured in the frequency range of 2–15 GHz. The heating behavior was studied in a multimode microwave cavity at 2.4 GHz. The highest microwave heating rate in the temperature range of 315–355 K was observed in the film close to the critical grain size of 21 nm in diameter marked by the transition from single– to multi–domain structure of nanocrystals in Ni0.5Zn0.5Fe2O4 film and by a maximum in its coercivity.

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