Microwave Absorbing Ferrite Thin Films for Microwave Heating of Microstructured Reactors

2009 ◽  
Vol 1222 ◽  
Author(s):  
Pengzhao Gao ◽  
Evgeny V. Rebrov ◽  
Jaap C. Schouten ◽  
Richard Kleismit ◽  
John Cetnar ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Microwave Heating ◽  
Near Field ◽  
Coplanar Waveguide ◽  
Sol Gel ◽  
Microwave Cavity ◽  
Silicon Substrates ◽  
Microwave Microscopy ◽  
Zn Ferrite

AbstractNanocrystalline Ni0.5Zn0.5Fe2O4 thin films have been synthesized with various grain sizes by sol–gel method on polycrystalline silicon substrates. The morphology and microwave absorption properties of the films calcined in the 673–1073 K range were studied by using XRD, AFM, near–field evanescent microwave microscopy, coplanar waveguide and direct microwave heating measurements. All films were uniform without microcracks. The increase of the calcination temperature from 873 to 1073 K and time from 1 to 3h resulted in an increase of the grain size from 12 to 27 nm. The complex permittivity of the Ni-Zn ferrite films was measured in the frequency range of 2–15 GHz. The heating behavior was studied in a multimode microwave cavity at 2.4 GHz. The highest microwave heating rate in the temperature range of 315–355 K was observed in the film close to the critical grain size of 21 nm in diameter marked by the transition from single– to multi–domain structure of nanocrystals in Ni0.5Zn0.5Fe2O4 film and by a maximum in its coercivity.

The crystallization of thin-film ceramics

1992 ◽  
Vol 50 (1) ◽  
pp. 338-339
Author(s):  
J.M. Schwartz ◽  
L.F. Francis ◽  
L.D. Schmidt ◽  
P.S. Schabes-Retchkiman
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Sol Gel ◽  
Processing Route ◽  
Small Areas ◽  
Ceramic Thin Films ◽  
Complex Shapes ◽  
Sol Gel Process ◽  
Ceramic Precursors ◽  
Crystalline Ceramic

Ceramic thin films and coatings are of interest for electrical, optical, magnetic and thermal barrier applications. Critical for improved properties in thin films is the development of specific microstructures during processing. To this end, the sol-gel method is advantageous as a versatile processing route. The sol-gel process involves depositing a solution containing metalorganic or colloidal ceramic precursors onto a substrate and heating the deposited layer to form a crystalline or non-crystalline ceramic coating. This route has several advantages, including the ability to create tailored microstructures and properties, to coat large or small areas, simple or complex shapes, and to more easily prepare multicomponent ceramics. Sol-gel derived coatings are amorphous in the as-deposited state and develop their crystalline structure and microstructure during heat-treatment. We are particularly interested in studying the amorphous to crystalline transformation, because many key features of the microstructure such as grain size and grain size distribution may be linked to this transformation.

Finite-Element Modeling and Quantitative Measurement Using Scanning Microwave Microscopy to Characterize Dielectric Films

2018 ◽  
Author(s):  
K. A. Rubin ◽  
W. Jolley ◽  
Y. Yang
Keyword(s):  
Thin Films ◽  
Dielectric Film ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Fem Modeling ◽  
Dielectric Thin Films ◽  
Microwave Microscopy ◽  
Scanning Microwave Microscopy ◽  
Low K

Abstract Scanning Microwave Impedance Microscopy (sMIM) can be used to characterize dielectric thin films and to quantitatively discern film thickness differences. FEM modeling of the sMIM response provides understanding of how to connect the measured sMIM signals to the underlying properties of the dielectric film and its substrate. Modeling shows that sMIM can be used to characterize a range of dielectric film thicknesses spanning both low-k and medium-k dielectric constants. A model system consisting of SiO2 thin films of various thickness on silicon substrates is used to illustrate the technique experimentally.

Study on the Grain Size of Vanadium Dioxide Thin Films using Sol-gel Spin Coating Method

2018 ◽  
Author(s):  
Ibrahim Mohd Yazid ◽  
Muhammad Hazim Raselan ◽  
Shafinaz Sobihana Shariffudin ◽  
Puteri Sarah Mohamad Saad ◽  
Sukreen Hana ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Vanadium Dioxide ◽  
Spin Coating ◽  
Sol Gel ◽  
Spin Coating Method ◽  
Coating Method ◽  
Vanadium Dioxide Thin Films

LiNiO2 Thin Films Fabricated by Diffusion of Li on Ni Tapes

2007 ◽  
Vol 336-338 ◽  
pp. 505-508
Author(s):  
Cheol Jin Kim ◽  
In Sup Ahn ◽  
Kwon Koo Cho ◽  
Sung Gap Lee ◽  
Jun Ki Chung
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Grain Size ◽  
Sol Gel ◽  
Surface Oxidation ◽  
Cold Isostatic Pressing ◽  
Tube Furnace ◽  
Treatment Conditions ◽  
Average Grain Size ◽  
Cold Rolling And Annealing

LiNiO2 thin films for the application of cathode of the rechargeable battery were fabricated by Li ion diffusion on the surface oxidized NiO layer. Bi-axially textured Ni-tapes with 50 ~ 80 μm thickness were fabricated using cold rolling and annealing of Ni-rod prepared by cold isostatic pressing of Ni powder. Surface oxidation of Ni-tapes were conducted using tube furnace or line-focused infrared heater at 700 °C for 150 sec in flowing oxygen atmosphere, resulted in NiO layer with thickness of 400 and 800 μm, respectively. After Li was deposited on the NiO layer by thermal evaporation, LiNiO2 was formed by Li diffusion through the NiO layer during subsequent heat treatment using IR heater with various heat treatment conditions. IR-heating resulted in the smoother surface and finer grain size of NiO and LiNiO2 layer compared to the tube-furnace heating. The average grain size of LiNiO2 layer was 0.5~1 μm, which is much smaller than that of sol-gel processed LiNiO2. The reacted LiNiO2 region showed homogeneous composition throughout the thickness and did not show any noticeable defects frequently found in the solid state reacted LiNiO2, but crack and delamination between the reacted LiNiO2 and Ni occurred as the reaction time increased above 4hrs.

Effect of Precursor Sol Ageing on Sol-Gel Derived Ruthenium Oxide Thin Films

1999 ◽  
Vol 606 ◽  
Author(s):  
S. Bhaskar ◽  
S. B. Majumder ◽  
P. S. Dobal ◽  
R. S. Katiyar ◽  
A. L. M. Cruz ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Ruthenium Oxide ◽  
Precursor Solution ◽  
Silicon Substrates ◽  
Solution Deposition ◽  
Precursor Material ◽  
Afm Analysis

AbstractIn the present work we have optimized the process parameters to yield homogeneous, smooth ruthenium oxide (RuO2) thin films on silicon substrates by a solution deposition technique using RuCl3.×.H2O as the precursor material. Films were annealed in a temperature range of 300°C to 700°C, and it was found that RuO2 crystallizes at a temperature as low as 400°C. The crystallinity of the films improves with increased annealing temperature and the resistivity decreases from 4.86µΩ-m (films annealed at 400°C) to 2.94pµΩ (films annealed at 700°C). Ageing of the precursor solution has a pronounced effect on the measured resistivities of RuO2 thin films. It was found that the measured room temperature resistivities increases from 2.94µΩ-m to 45.7µΩ-m when the precursor sol is aged for aged 60 days. AFM analysis on the aged films shows that the grain size and the surface roughness of the annealed films increase with the ageing of the precursor solution. From XPS analysis we have detected the presence of non-transformed RuCl3 in case of films prepared from aged solution. We propose, that solution ageing inhibits the transformation of RuCl3 to RuO2 during the annealing of the films. The deterioration of the conductivity with solution ageing is thought to be related with the chloride contamination in the annealed films.

scholarly journals Effect of Solution Conditions on the Properties of Sol–Gel Derived Potassium Sodium Niobate Thin Films on Platinized Sapphire Substrates

Nanomaterials ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 1600 ◽  
Author(s):  
Alexander Tkach ◽  
André Santos ◽  
Sebastian Zlotnik ◽  
Ricardo Serrazina ◽  
Olena Okhay ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Low Cost ◽  
Sol Gel ◽  
Precursor Solution ◽  
Dissipation Factor ◽  
Solution Concentration ◽  
Potassium Sodium Niobate ◽  
Sapphire Substrates ◽  
Average Grain Size

If piezoelectric micro-devices based on K0.5Na0.5NbO3 (KNN) thin films are to achieve commercialization, it is critical to optimize the films’ performance using low-cost scalable processing conditions. Here, sol–gel derived KNN thin films are deposited using 0.2 and 0.4 M precursor solutions with 5% solely potassium excess and 20% alkali (both potassium and sodium) excess on platinized sapphire substrates with reduced thermal expansion mismatch in relation to KNN. Being then rapid thermal annealed at 750 °C for 5 min, the films revealed an identical thickness of ~340 nm but different properties. An average grain size of ~100 nm and nearly stoichiometric KNN films are obtained when using 5% potassium excess solution, while 20% alkali excess solutions give the grain size of 500–600 nm and (Na + K)/Nb ratio of 1.07–1.08 in the prepared films. Moreover, the 5% potassium excess solution films have a perovskite structure without clear preferential orientation, whereas a (100) texture appears for 20% alkali excess solutions, being particularly strong for the 0.4 M solution concentration. As a result of the grain size and (100) texturing competition, the highest room-temperature dielectric permittivity and lowest dissipation factor measured in the parallel-plate-capacitor geometry were obtained for KNN films using 0.2 M precursor solutions with 20% alkali excess. These films were also shown to possess more quadratic-like and less coercive local piezoelectric loops, compared to those from 5% potassium excess solution. Furthermore, KNN films with large (100)-textured grains prepared from 0.4 M precursor solution with 20% alkali excess were found to possess superior local piezoresponse attributed to multiscale domain microstructures.

Effect of Annealing Atmosphere on the Morphology of Copper Oxide Thin Films Deposited on TiO2 Substrates Prepared by Sol-Gel Process

2013 ◽  
Vol 594-595 ◽  
pp. 113-117 ◽  
Author(s):  
Dewi Suriyani Che Halin ◽  
Ibrahim Abu Talib ◽  
Abdul Razak Daud ◽  
Muhammad Azmi Abdul Hamid
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Grain Size ◽  
Copper Oxide ◽  
Spin Coating ◽  
Sol Gel ◽  
Annealing Atmosphere ◽  
Oxide Thin Films ◽  
Different Temperatures ◽  
Xrd Patterns

Copper oxide films were prepared via sol-gel like spin coating starting from methanolic solutions of cupric chloride onto the TiO2 substrates. Films were obtained by spin coating under room conditions (temperature, 25-30 °C) and were subsequently annealed at different temperatures (200-400 °C) in oxidizing (air) and inert (N2) atmospheres. X-ray diffraction (XRD) patterns showed crystalline phases, which were observed as a function of the annealing conditions. The film composition resulted single or multi-phasic depending on both temperature and atmosphere. The grain size of film was measured using scanning electron microscopy (SEM) and the surface roughness of thin films was characterized by atomic force microscopy (AFM). The grain size of which was annealed in air at 300 °C was 30.39 nm with the surface roughness of 96.16 nm. The effects of annealing atmosphere on the structure and morphology of copper oxide thin films are reported.

Optical Properties of Nanostructured Zinc Oxides Deposited on Silicon Substrates

2011 ◽  
Vol 312-315 ◽  
pp. 1132-1136 ◽  
Author(s):  
Mohamad Hafiz Mamat ◽  
Zuraida Khusaimi ◽  
Mohamad Mahmood Rusop
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spin Coating ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Silicon Substrates ◽  
Annealing Temperatures ◽  
Uv Emission ◽  
Zinc Oxides ◽  
Optically Transparent

Nanostructured zinc oxide (ZnO) thin films were prepared through sol-gel method and spin-coating technique. ZnO thin films then were annealed at temperature of 350°C, 400°C, 450°C and 500°C. The thin films were characterized using field emission scanning electron microscope (FESEM), UV-VIS-NIR spectrophotometer and photoluminescence (PL) spectrofluorometer for morphology and optical properties study. The morphology study indicates that the particle size of ZnO increased with annealing temperatures. All thin films are optically transparent (~ 80 % in transmittance) in the visible light-NIR region. PL spectra reveal improved UV emission with annealing temperatures up to 500°C.

Study of the structure, optical properties, surface morphology and topology of ZnO thin films grown by sol–gel on silicon substrates

2014 ◽  
Vol 1 (3) ◽  
pp. 036404 ◽  
Author(s):  
J G Quiñones-Galván ◽  
H Tototzintle-Huitle ◽  
L A Hernández-Hernández ◽  
J S Arias-Cerón ◽  
F de Moure-Flores ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Surface Morphology ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Silicon Substrates ◽  
And Topology

Growth and Characterizations of Relaxor-Based Pb(Mg1/3Nb2/3)O3-PbTiO3 Thin Films by Sol-Gel Method

2007 ◽  
Vol 280-283 ◽  
pp. 839-844
Author(s):  
Hui Qing Fan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Sol Gel ◽  
Silicon Substrates ◽  
Final Annealing ◽  
Gel Method ◽  
Sol Gel Method ◽  
Phase Development ◽  
Transmission Electron ◽  
Pt Films

Relaxor-based 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) thin films were grown epitaxially on silicon substrates by sol-gel method and PbO cover coat technique, and investigated by x-ray diffraction, auger electron spectroscopy, scanning electron microscopy, and transmission electron microscopy. The phase development and microstrure evolution of the PMN-PT film were significantly affected by the final annealing temperature and time. A perovskite PMN-PT film was obtained after annealing at 850oC for 1 min. Then, highly <100>-oriented and textured PMN-PT films could be achieved by using a LaNiO3 perovskite template.

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