Measuring the Mechanical Properties of Thin Metal Films by Means of Bulge Testing of Micromachined Windows

1994 ◽  
Vol 356 ◽  
Author(s):  
V. M. Paviot ◽  
J. J. Vlassak ◽  
W. D. Nix

AbstractFree-standing films of gold and aluminum have been fabricated using standard micro-machining techniques. LPCVD silicon nitride films are deposited onto (100) silicon wafers. Square and rectangular silicon nitride membranes are made by anisotropic etching of the silicon substrates. Then, metal films are deposited onto the silicon nitride membranes by means of evaporation. Finally, the sacrificial silicon nitride film is etched away by means of reactive plasma etching, resulting in well-defined, square and rectangular metal membranes.Bulge testing of square windows allows one to determine the biaxial modulus of the film as well as the residual stress in it. Testing rectangular windows yields the plane-strain elastic modulus and the residual stress. Since deformation in rectangular membranes approaches plane-strain deformation, this geometry is ideal for studying the plastic properties of the metal films. Stress-strain curves can be readily determined from the load-deflection curves of rectangular membranes. The gold films have a biaxial modulus of 161±3 GPa and a plane-strain modulus of 105±5 GPa, slightly lower than the literature values for a (111) textured film. The yield stress of these films is approximately 231±17 MPa at 10−4% plastic strain. The elastic moduli of the aluminum films are 105±3 GPa and 76.4±0.7 GPa, respectively; the yield stress of these films is 187±30MPa.

1999 ◽  
Vol 594 ◽  
Author(s):  
T. Y. Zhang ◽  
Y. J. Su ◽  
C. F. Qian ◽  
M. H. Zhao ◽  
L. Q. Chen

AbstractThe present work proposes a novel microbridge testing method to simultaneously evaluate the Young's modulus, residual stress of thin films under small deformation. Theoretic analysis and finite element calculation are conducted on microbridge deformation to provide a closed formula of deflection versus load, considering both substrate deformation and residual stress in the film. Silicon nitride films fabricated by low pressure chemical vapor deposition on silicon substrates are tested to demonstrate the proposed method. The results show that the Young's modulus and residual stress for the annealed silicon nitride film are respectively 202 GPa and 334.9 MPa.


Nanoscale ◽  
2014 ◽  
Vol 6 (18) ◽  
pp. 10798-10805 ◽  
Author(s):  
J. P. S. DesOrmeaux ◽  
J. D. Winans ◽  
S. E. Wayson ◽  
T. R. Gaborski ◽  
T. S. Khire ◽  
...  

Free standing ultrathin nanoporous silicon nitride membranes are fabricated on a wafer scale by transferring the pores from porous nanocrystalline silicon into a silicon nitride film by reactive ion etch.


Vacuum ◽  
1991 ◽  
Vol 42 (16) ◽  
pp. 1041
Author(s):  
Li Bingzong ◽  
Gu Zhiguang

1994 ◽  
Vol 3 (9) ◽  
pp. 682-689 ◽  
Author(s):  
Chen Jun-fang ◽  
Cheng Shao-yu ◽  
Ren Zhao-xing ◽  
Zhang Su-qing ◽  
Ning Zhao-yuan ◽  
...  

1971 ◽  
Vol 10 (12) ◽  
pp. 1675-1679 ◽  
Author(s):  
Hiroshi Ogawa ◽  
Tatau Nishinaga ◽  
Masanobu Kasuga ◽  
Tetsuya Arizumi

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