Microstructure of Oxidized Ge0.78SiO.12 annealed in a Reducing Ambient
Keyword(s):
ABSTRACTTransmission electron microscopy, conventional and high-resolution, is used to characterize the microstructural behavior of oxidized Ge0.78Si0.12 layers annealed in a reducing 95% N2+ 5% H2 ambient. An epitaxial Ge layer grows by solid-phase epitaxy on an underlying Ge0.78Si0.12 seeding layer with a Ge-Sio2 matrix positioned between them. Defect densities in the epitaxial Ge are significantly lower than in the underlying Ge0.78Si0.12. Microstructural details of this behavior are investigated.
2001 ◽
Vol 223
(1-2)
◽
pp. 161-168
◽
1993 ◽
Vol 26
(3)
◽
pp. 388-395
◽
2001 ◽
Vol 16
(11)
◽
pp. 3229-3237
◽
2019 ◽
Vol 34
(12)
◽
pp. 124004
◽
Keyword(s):
1982 ◽
Vol 40
◽
pp. 722-723
◽