Growth of MonX by Reactive Laser ablation

1995 ◽  
Vol 388 ◽  
Author(s):  
Randolph E. Treece ◽  
James S. Horwitz ◽  
Edward Donovan ◽  
Douglas B. Chrisey
Keyword(s):  
Electronic Transport ◽  
Pulsed Laser ◽  
Fused Silica ◽  
Laser Deposition ◽  
Superconducting Transition ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
X Ray ◽  
Temperature Dependent Resistivity ◽  
Background Gas

AbstractControl of composition and phase of a series of MoNx thin films has been accomplished by reactive pulsed laser deposition (PLD). Molybdenum foil targets were ablated in a background gas of N2/H2 (10%) at pressures ranging from 40 to 120 mTorr. the MoNx films were deposited simultaneously onto (100) MgO and fused silica substrates. the films were characterized by X-ray diffraction (XRD), temperature-dependent resistivity, and Rutherford backscattering spectroscopy (RBS). the composition, phase, and electronic transport properties were found to depend on N2/H2 pressure, substrate temperature, and substrate orientation. the highest superconducting transition temperature (Tc ) was observed in a hexagonal Mo2N film where Tc (onset) ≈ 8 K. IN general, Tc was observed to correlate most closely with the N/Mo ratio. as the ratio of N/Mo increased above optimal M02N composition, Tc decreased. Films grown on MgO generally had higher N/Mo ratios and hence lower Tc values than films deposited on silic A.

Rectifying characteristics and tunable magnetoresistance in heterojunctions of La0.9Hf0.1MnO3/0.05 wt.% Nb-doped SrTiO3

2017 ◽  
Vol 31 (25) ◽  
pp. 1745022 ◽  
Author(s):  
Yaping Qi ◽  
Xiangbo Liu ◽  
Hao Ni ◽  
Ming Zheng ◽  
Liping Chen ◽  
...  
Keyword(s):  
Band Structure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Ferromagnetic Transition ◽  
Grown Film ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
X Ray ◽  
Current Voltage ◽  
Current Voltage Characteristics

La[Formula: see text]Hf[Formula: see text]MnO3 films were grown on 0.05 wt.% Nb-doped SrTiO3 substrates by pulsed laser deposition. X-ray diffraction measurements demonstrated that our samples were of good epitaxy and single-crystal. The temperature-dependent resistance has been investigated. It was observed that the as-grown film of La[Formula: see text]Hf[Formula: see text]MnO3 exhibited a typical paramagnetic-ferromagnetic transition. Heterojunctions of La[Formula: see text]Hf[Formula: see text]MnO3/0.05 wt.% Nb-doped SrTiO3 exhibited-asymmetric current–voltage characteristics and a remarkable temperature-dependent rectifying behavior in a wide temperature range (from 40 K to 300 K). And the most remarkable observation of this work is the existence of a crossover from positive to negative magnetoresistance in the La[Formula: see text]Hf[Formula: see text]MnO3/0.05 wt.% Nb-doped SrTiO3 heterojunction as the temperature decreases. A temperature-dependent magnetoresistance was studied as well. The rectifying characteristics and tunable magnetoresistance of these heterojunctions may be attributed to band structure of La[Formula: see text]Hf[Formula: see text]MnO3/0.05 wt.% Nb-doped SrTiO3 heterojunction.

Optical and Electrical Properties of Gallium-Doped Mg15Zn85O Thin Films

2006 ◽  
Vol 957 ◽  
Author(s):  
Wei Wei ◽  
Vikram Bhosle ◽  
Chunming Jin ◽  
Roger J Narayan
Keyword(s):  
Thin Films ◽  
Substrate Surface ◽  
Fused Silica ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
X Ray ◽  
Gallium Concentration ◽  
Band Filling ◽  
Absorption Measurements

ABSTRACTGa-doped Mg0.15Zn0.85O thin films have been grown on fused silica substrates at 350°C with four different gallium concentration values using pulsed laser deposition. X-ray diffraction results indicate that these films were textured with c-plane parallel to the substrate surface. The bandgap of the films were determined based on the absorption measurements. The bandgaps of the Ga-doped thin films shifted to higher energy with respect to that of the unalloyed Mg0.15Zn0.85O thin film due to the band filling effect of electron distribution in the conduction band. Resistivity of the films was measured with four-point probe at temperatures from 295 K to 15 K. The activation energy of the gallium dopants was extracted by fitting the temperature dependent curve of resistivity.

Thin Films of Semiconducting SnSi Alloys Grown by Pulsed Laser Deposition

1994 ◽  
Vol 358 ◽  
Author(s):  
Randolph E. Treece ◽  
J. S. Horwitz ◽  
D. B. Chrisey ◽  
J. Tang ◽  
R. S. Williams
Keyword(s):  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Rays ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Target Holder ◽  
X Ray ◽  
Potential Applications

ABSTRACTSemiconducting SnxSi1−x (0≤x≤0.6) thin-film alloys have been grown by pulsed laser deposition (PLD). These new materials are amorphous to X-rays and display small positive optical band gaps, suggesting potential applications in solar cells. The tin silicide films were grown by depositing very thin (1–30 Å) alternating atomic layers from individual Sn and Si targets utilizing an automated multi-target holder coupled to a conventional PLD system. The value of x was selected by controlling the thickness of the atomic layers. The films were characterized by X-ray diffraction, optical absorption, Rutherford backscattering spectroscopy, temperature-dependent resistivity, and X-ray photoelectron spectroscopy. Tin segregation is prevented by keeping the Sn layer thickness below a critical value. Compositions beyond x > 0.6 led to semimetallic SnxSi1−x films with tin crystallites.

Structural and Magnetic Properties of Ni50Mn35In15 Thin Films

2015 ◽  
Vol 233-234 ◽  
pp. 666-669 ◽  
Author(s):  
Sergey Granovsky ◽  
Irina Gaidukova ◽  
Andrey Sokolov ◽  
Anton Devishvili ◽  
Vyacheslav Snegirev
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Large Temperature ◽  
Neutron Reflectivity ◽  
Martensitic Transition ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
X Ray ◽  
Crystalline Substrate

We present the results of macroscopic measurements, X-ray diffraction and neutron reflectivity experiments on ≈ 25 nm thin films of Ni50Mn35In15 grown using Pulsed laser deposition technique on MgO single-crystalline substrate. Intrinsic magnetization of the film below Tc ≈ 290 K was confirmed. Structural measurements show the large temperature-dependent residual strain on the substrate with no indication of martensitic transition.

Polydomain Structure of Epitaxial PbTiO3 films on MgO

1997 ◽  
Vol 493 ◽  
Author(s):  
S. P. Alpay ◽  
A. S. Prakash ◽  
S. Aggarwal ◽  
R. Ramesh ◽  
A. L. Roytburd ◽  
...  
Keyword(s):  
Domain Structure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Theoretical Predictions ◽  
The Stability ◽  
Increasing Temperature ◽  
Stable Domains ◽  
Domain Stability

ABSTRACTA PbTiO3(001) film grown on MgO(001) by pulsed laser deposition is examined as an example to demonstrate the applications of the domain stability map for epitaxial perovskite films which shows regions of stable domains and fractions of domains in a polydomain structure. X-ray diffraction studies indicate that the film has a …c/a/c/a… domain structure in a temperature range of °C to 400°C with the fraction of c-domains decreasing with increasing temperature. These experimental results are in excellent agreement with theoretical predictions based on the stability map.

Frequency and Temperature Dependence of Dielectric Properties of Orthorhombic HoMnO3 Thin Films

2014 ◽  
Vol 1025-1026 ◽  
pp. 427-431
Author(s):  
Ping Gao ◽  
Wei Zhang ◽  
Wei Tian Wang
Keyword(s):  
Dielectric Properties ◽  
Pulsed Laser ◽  
Signal Amplitude ◽  
Debye Model ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Cole Diagram

Orthorhombic HoMnO3 films were prepared epitaxially on Nb-doped SrTiO3 single crystal substrates by using pulsed laser deposition technique. The films showed perfectly a-axis crystallographic orientations. X-ray diffraction and atomic force microscopy were used to characterize the films. The complex dielectric properties were measured as functions of frequency (40 Hz~1 MHz) and temperature (80 K~300 K) with a signal amplitude of 50 mv. The respective dielectric relaxation peaks shifted to higher frequency as the measuring temperature increased, with the same development of real part of the complex permittivity. The cole-cole diagram was obtained according to the Debye model, and the effects of relaxation process were discussed.

Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 123-125 ◽  
pp. 375-378 ◽  
Author(s):  
Ram Prakash ◽  
Shalendra Kumar ◽  
Chan Gyu Lee ◽  
S.K. Sharma ◽  
Marcelo Knobel ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Fe Doping ◽  
Full Width ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

Temperature Dependent Micro-Raman Scattering of Sr0.35Ba0.65TiO3 Film Grown by Pulsed Laser Deposition

1995 ◽  
Vol 401 ◽  
Author(s):  
Sampriti Sen ◽  
E. Ching-Prado ◽  
A. Reynés-Figueroa ◽  
R. S. Katiyar ◽  
J. S. Horwitz ◽  
...  
Keyword(s):  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Ceramic Material ◽  
Normal Modes ◽  
Pulsed Laser ◽  
Rhombohedral Phase ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Ft Ir

AbstractA film of Sr0.35Ba0.65TiO3 (SBT) has been grown in situ by pulsed laser deposition on (001) LaAlO3 single crystal. From X-ray diffraction studies the sample is found to be in single phase and well oriented. Raman spectrum of the SBT film shows bands around 178, 219, 296, 513, 571 and 741 cm”. The spectrum is similar to that found in SBT ceramic material, but the frequencies of the phonons are shifted. This can be explained if the film is under stress due to the presence of defects. The bands at 296 and 741cm−1 correspond to the B1 and A1(LO) normal modes of the BaTiO3 (BT) system, and they are representative of the BT tetragonal phase, which at first glance appears to contradict earlier structural symmetry assignment for SBT(x=0.35) film at room temperature. Micro-Raman measurements from different regions of the film indicate that the SBT film is homogeneous. The bands at 296 and 741 cm−1 are broader in comparison to those in BT single crystal and SBT ceramic material. Temperature dependent halfwidths of these modes suggest strong contribution of defects. Temperature dependent results are discussed in terms of anharmonic contributions involving three and four phonon processes as well as defects. Also, the orthorhombic and rhombohedral phase transitions are discussed. Finally, SEM/EDAX and FT-IR techniques have been used for the structural characterization.

Control of Crystallinity of Hydroxyapatite Sheet

2013 ◽  
Vol 583 ◽  
pp. 47-50 ◽  
Author(s):  
Masanobu Kusunoki ◽  
Taiyo Matsuda ◽  
Naoki Fujita ◽  
Yasuhiro Sakoishi ◽  
Ryou Iguchi ◽  
...  
Keyword(s):  
Cell Culture ◽  
Annealing Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Free Standing ◽  
X Ray ◽  
Electric Oven ◽  
Diffraction Peaks ◽  
Conventional Annealing

A technique to control the crystallinity of hydroxyapatite (HA) was investigated for applications such as dentistry, regenerative medicine, cell culture scaffolding, and bio-sensors. An amorphous HA film was first produced by pulsed laser deposition. After deposition, it was separated from a substrate as a free-standing sheet. Annealing was then performed to control the crystallinity of the sheet. It was found that conventional annealing in an electric oven was not suitable for HA sheets, because it led to curling and cracking. Since such problems were assumed to be caused by thermal stress, annealing was next carried out with the HA sheet enclosed in HA powder in the center of a metal capsule. This method allowed annealing to be successfully carried out without causing any curling or cracking. Uniform pieces with dimensions of 10 mm × 10 mm cut from a large HA sheet were annealed at temperatures of 200 to 800 ºC and then examined using X-ray diffraction. It was found that the intensity of the diffraction peaks associated with crystalline HA changed with annealing temperature, and that the strongest peaks were observed for the sample annealed at 500 ºC. These results indicate that the crystallinity of the HA sheet can be controlled using the proposed method.

CRYSTALLINE SrTiO3 THIN FILMS ON SILICON BY PULSED LASER DEPOSITION

2005 ◽  
Vol 19 (01n03) ◽  
pp. 533-535
Author(s):  
J. H. HAO ◽  
J. GAO
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Perovskite Oxide ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Silicon Materials

We have developed a process to grow SrTiO 3 ( STO ) thin films showing single (110) orientation directly on Si by means of pulsed laser deposition technique. The growth of STO films directly on Si has been described. The crystallinity of the grown STO films was characterized by X-ray diffraction analysis of θ-2θ scan and rocking curve. Our results may be of interest for better understanding of the growth based on the perovskite oxide thin films on silicon materials.

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