Polydomain Structure of Epitaxial PbTiO3 films on MgO

1997 ◽  
Vol 493 ◽  
Author(s):  
S. P. Alpay ◽  
A. S. Prakash ◽  
S. Aggarwal ◽  
R. Ramesh ◽  
A. L. Roytburd ◽  
...  
Keyword(s):  
Domain Structure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Theoretical Predictions ◽  
The Stability ◽  
Increasing Temperature ◽  
Stable Domains ◽  
Domain Stability

ABSTRACTA PbTiO3(001) film grown on MgO(001) by pulsed laser deposition is examined as an example to demonstrate the applications of the domain stability map for epitaxial perovskite films which shows regions of stable domains and fractions of domains in a polydomain structure. X-ray diffraction studies indicate that the film has a …c/a/c/a… domain structure in a temperature range of °C to 400°C with the fraction of c-domains decreasing with increasing temperature. These experimental results are in excellent agreement with theoretical predictions based on the stability map.

Domain structure of epitaxial PbTiO3 films grown on vicinal (001) SrTiO3

1997 ◽  
Vol 12 (5) ◽  
pp. 1297-1305 ◽  
Author(s):  
C. D. Theis ◽  
D. G. Schlom
Keyword(s):  
Diffraction Analysis ◽  
Pulsed Laser Deposition ◽  
Domain Structure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Full Width ◽  
Half Maximum ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray

Epitaxial PbTiO3 films have been grown on vicinal (001) SrTiO3 substrates by pulsed laser deposition. Vicinal SrTiO3 substrates with misorientations up to 9° from (001) were used, and the influence of the direction of misorientation on the resulting domain structure was studied. 4-circle x-ray diffraction analysis indicates that thin (40 nm) PbTiO3 films are completely c-axis oriented [rocking curve full-width-at-half-maximum (FWHM) of 0.25° for the 002 reflection] and that thicker films (∼ 200 nm) contain mixed a-axis and c-axis PbTiO3 domains due to twinning along {011} planes. The [100] axis of the a-axis domains is misoriented by 2.1° to 3.3° toward 〈100〉 substrate directions with respect to the substrate normal. In contrast to growth on well-oriented (001) SrTiO3 surfaces where the four equivalent tilts of the [100] axis of the a-axis domains are equally likely, on vicinal SrTiO3 the a-axis domains are preferentially oriented in an uphill direction with respect to the crystallographic miscut.

Frequency and Temperature Dependence of Dielectric Properties of Orthorhombic HoMnO3 Thin Films

2014 ◽  
Vol 1025-1026 ◽  
pp. 427-431
Author(s):  
Ping Gao ◽  
Wei Zhang ◽  
Wei Tian Wang
Keyword(s):  
Dielectric Properties ◽  
Pulsed Laser ◽  
Signal Amplitude ◽  
Debye Model ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Cole Diagram

Orthorhombic HoMnO3 films were prepared epitaxially on Nb-doped SrTiO3 single crystal substrates by using pulsed laser deposition technique. The films showed perfectly a-axis crystallographic orientations. X-ray diffraction and atomic force microscopy were used to characterize the films. The complex dielectric properties were measured as functions of frequency (40 Hz~1 MHz) and temperature (80 K~300 K) with a signal amplitude of 50 mv. The respective dielectric relaxation peaks shifted to higher frequency as the measuring temperature increased, with the same development of real part of the complex permittivity. The cole-cole diagram was obtained according to the Debye model, and the effects of relaxation process were discussed.

Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 123-125 ◽  
pp. 375-378 ◽  
Author(s):  
Ram Prakash ◽  
Shalendra Kumar ◽  
Chan Gyu Lee ◽  
S.K. Sharma ◽  
Marcelo Knobel ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Fe Doping ◽  
Full Width ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

Control of Crystallinity of Hydroxyapatite Sheet

2013 ◽  
Vol 583 ◽  
pp. 47-50 ◽  
Author(s):  
Masanobu Kusunoki ◽  
Taiyo Matsuda ◽  
Naoki Fujita ◽  
Yasuhiro Sakoishi ◽  
Ryou Iguchi ◽  
...  
Keyword(s):  
Cell Culture ◽  
Annealing Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Free Standing ◽  
X Ray ◽  
Electric Oven ◽  
Diffraction Peaks ◽  
Conventional Annealing

A technique to control the crystallinity of hydroxyapatite (HA) was investigated for applications such as dentistry, regenerative medicine, cell culture scaffolding, and bio-sensors. An amorphous HA film was first produced by pulsed laser deposition. After deposition, it was separated from a substrate as a free-standing sheet. Annealing was then performed to control the crystallinity of the sheet. It was found that conventional annealing in an electric oven was not suitable for HA sheets, because it led to curling and cracking. Since such problems were assumed to be caused by thermal stress, annealing was next carried out with the HA sheet enclosed in HA powder in the center of a metal capsule. This method allowed annealing to be successfully carried out without causing any curling or cracking. Uniform pieces with dimensions of 10 mm × 10 mm cut from a large HA sheet were annealed at temperatures of 200 to 800 ºC and then examined using X-ray diffraction. It was found that the intensity of the diffraction peaks associated with crystalline HA changed with annealing temperature, and that the strongest peaks were observed for the sample annealed at 500 ºC. These results indicate that the crystallinity of the HA sheet can be controlled using the proposed method.

CRYSTALLINE SrTiO3 THIN FILMS ON SILICON BY PULSED LASER DEPOSITION

2005 ◽  
Vol 19 (01n03) ◽  
pp. 533-535
Author(s):  
J. H. HAO ◽  
J. GAO
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Perovskite Oxide ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Silicon Materials

We have developed a process to grow SrTiO 3 ( STO ) thin films showing single (110) orientation directly on Si by means of pulsed laser deposition technique. The growth of STO films directly on Si has been described. The crystallinity of the grown STO films was characterized by X-ray diffraction analysis of θ-2θ scan and rocking curve. Our results may be of interest for better understanding of the growth based on the perovskite oxide thin films on silicon materials.

Epitaxial Pd-Doped LaFeO3 Films Grown on (100) SrTiO3 by Pulsed Laser Deposition

2014 ◽  
Vol 936 ◽  
pp. 282-286
Author(s):  
Ying Wen Duan
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Film Surface ◽  
Laser Deposition ◽  
Structural Quality ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
Orientation Relationships ◽  
X Ray ◽  
Transmission Electron

Single-crystalline, epitaxial LaFeO3 films with 5 at. % substitution of Pd on the Fe site are grown on (100) SrTiO3 substrate by pulsed-laser deposition technique. The epitaxial orientation relationships are (110)[001]LFPO||(100)[001]STO. X-ray diffraction and transmission electron microscopy reveal that the LFPO films have high structural quality and an atomically sharp LFPO/STO interface. After reduction treatments of as-grown LFPO films, very little Pd escaped the LFPO lattice onto the film surface, the formed Pd (100) particles are oriented epitaxially, and parallel to the LFPO films surface.

Thermoelectric Properties of C-Axis-Oriented Ca3Co4O9+δ Films Grown on MgO-Buffered Si (100) by PLD Technique

2010 ◽  
Vol 29-32 ◽  
pp. 1913-1918
Author(s):  
Xia Zhang ◽  
Hong Chen ◽  
Qiu Hui Liao ◽  
Xia Li
Keyword(s):  
Thin Films ◽  
State Of The Art ◽  
Pulsed Laser ◽  
Buffer Layers ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Current State ◽  
Good Crystallinity

High-quality c-axis-oriented Ca3Co4O9+δ thin films have been grown directly on Si (100) wafers with inserting MgO buffer layers by pulsed-laser deposition (PLD). X-ray diffraction and scan electron microscopy show good crystallinity of the Ca3Co4O9+δ films. The resistivity and Seebeck coefficient of the Ca3Co4O9+δ thin films on Si (100) substrates are 9.8 mΩcm and 189 μV/K at the temperature of 500K, respectively, comparable to the single-crystal samples. This advance demonstrates the possibility of integrating the cobaltate-based high thermoelectric materials with the current state-of-the-art silicon technology for thermoelectricity-on-a-chip applications.

Growth of Epitaxial a-Axis and c-Axis Oriented Sr2RuO4 Films

1995 ◽  
Vol 401 ◽  
Author(s):  
S. Madhavan ◽  
B. J. Gibbons ◽  
A. Dabkowski ◽  
H. A. Dabkowska ◽  
S. Trolier-Mckinstry ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Epitaxial Films ◽  
Temperature Measurements ◽  
Laser Deposition ◽  
Metallic Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Oriented Films

AbstractEpitaxial films of Sr2RuO4 have been grown in situ by pulsed laser deposition on (100) LaAlO3 and (100) LaSrGaO4 substrates. X-ray diffraction results show that the films are single domain and grow c-axis oriented on (100) LaAlO3 and a-axis oriented on (100) LaSrGaO4 substrates. X-ray ø-scans indicate epitaxial alignment of the film and substrate in-plane axes in both cases. Resistivity versus temperature measurements reveal that the as-grown c-axis oriented films are semiconducting and the a-axis oriented films are metallic. The metallic films grown so far were found to be non-superconducting down to 50 mK.

Growth of CaFeOX/LaFeO3 Superlattice on SrTiO3(100) Substrates

2011 ◽  
Vol 1292 ◽  
Author(s):  
Nobuyuki Iwata ◽  
Mark Huijben ◽  
Guus Rijnders ◽  
Hiroshi Yamamoto ◽  
Dave H. A. Blank
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Layer Growth ◽  
Laser Deposition ◽  
Growth Mode ◽  
Layer By Layer ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
X Ray

ABSTRACTThe CaFeOX(CFO) and LaFeO3(LFO) thin films as well as superlattices were fabricated on SrTiO3(100) substrates by pulsed laser deposition (PLD) method. The tetragonal LFO film grew with layer-by-layer growth mode until approximately 40 layers. In the case of CFO, initial three layers showed layer-by-layer growth, and afterward the growth mode was transferred to two layers-by-two layers (TLTL) growth mode. The RHEED oscillation was observed until the end of the growth, approximately 50nm. Orthorhombic twin CaFeO2.5 (CFO2.5) structure was obtained. However, it is expected that the initial three CFO layers are CaFeO3 (CFO3) with the valence of Fe4+. The CFO and LFO superlattice showed a step-terraces surface, and the superlattice satellite peaks in a 2θ-θ and reciprocal space mapping (RSM) x-ray diffraction (XRD) measurements, indicating that the clear interfaces were fabricated.

Evaluation of Mechanical Properties of DLC-TiC Microlaminate Coatings

1999 ◽  
Vol 594 ◽  
Author(s):  
R. Bahl ◽  
M. Vedawyas ◽  
D. Patel ◽  
Ashok Kumar ◽  
M. Shamsuzzoha
Keyword(s):  
Mechanical Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Multilayer Structures ◽  
Nanometer Scale ◽  
Diamond Like Carbon ◽  
Structural Studies ◽  
X Ray Diffraction ◽  
X Ray ◽  
Hard Materials

AbstractMicrolaminate coatings are made of many alternating layers of two hard materials that, when combined in very thin layer on the nanometer scale, produce coatings with hardness that approaches diamond. In this report, we address these properties, from our investigations on the multilayer structures of titanium carbide (TIC) and diamond-like carbon (DLC) deposited on Si (100) substrates using pulsed laser deposition (PLD) technique. X-ray diffraction and Raman spectroscopy were used for the structural studies and the mechanical properties were analysed by the nano-indention technique. Microlaminate coatings of TiC/DLC and DLC/TiC coatings with varying layers were deposited on Si(100) substrates. Analysis of mechanical properties revealed that the hardness and modulus values of the multi-layers lie between those of monolithic coatings of TIC and DLC.

Sign in / Sign up

Export Citation Format

Share Document