Growth of InGaN Films by MBE at the Growth Temperature of GaN
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ABSTRACTWe report the growth of InGaN alloys over practically the entire composition range at the growth temperature of GaN (700–800 °C) by MBE. We found that when the grown films are thick (> 0.3 μm), incorporation of more than about 30% indium results in phase separation of InN, which is consistent with spinodal decomposition. On the other hand we discovered that such phase separation is absent in thin InGaN films ( < 600Å) grown as GaN/InGaN/GaN heterostructures. In such configurations we were able to incorporate up to 81% In, which is the highest yet reported.
2008 ◽
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2006 ◽
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2015 ◽
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1999 ◽
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pp. 3663-3667
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1999 ◽
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