New Developments in Metal Ion Implantation by Vacuum Arc Ion Sources and Metal Plasma Immersion

1995 ◽  
Vol 396 ◽  
Author(s):  
I.G. Brown ◽  
A. Anders ◽  
S. Anders ◽  
M.R. Dickinson ◽  
R.A. MacGill ◽  
...  
Keyword(s):  
Surface Modification ◽  
Ion Implantation ◽  
Metal Ion ◽  
Arc Discharge ◽  
High Energy ◽  
Ion Source ◽  
Plasma Sheath ◽  
Vacuum Arc ◽  
Large Area ◽  
Metal Plasma

AbstractIon implantation by intense beams of metal ions can be accomplished using the dense metal plasma formed in a vacuum arc discharge embodied either in a vacuum arc ion source or in a ‘metal plasma immersion’ configuration. In the former case high energy metal ion beams are formed and implantation is done in a more-or-less conventional way, and in the latter case the substrate is immersed in the plasma and repetitively pulse-biased so as to accelerate the ions at the high voltage plasma sheath formed at the substrate. A number of advances have been made in the last few years, both in plasma technology and in the surface modification procedures, that enhance the effectiveness and versatility of the methods, including for example: controlled increase of the ion charge states produced; operation in a dual metal-gaseous ion species mode; very large area beam formation; macroparticle filtering; and the development of processing regimes for optimizing adhesion, morphology and structure. These complementary ion processing techniques provide the plasma tools for doing ion surface modification over a very wide parameter regime, from ‘pure’ ion implantation at energies approaching the MeV level, through ion mixing at energies in the ∼1 to ∼100 keV range, to IBAD-like processing at energies from a few tens of eV to a few keV. Here we review the methods, describe a number of recent developments, and outline some of the surface modification applications to which the methods have been put.

Rare-Earth Doping by Ion Implantation and Related Techniques

1993 ◽  
Vol 301 ◽  
Author(s):  
Ian G. Brown
Keyword(s):  
Rare Earth ◽  
Ion Implantation ◽  
Rare Earths ◽  
High Energy ◽  
Ion Source ◽  
Low Energy ◽  
Vacuum Arc ◽  
Rare Earth Doping ◽  
Metal Plasma ◽  
Wide Range

ABSTRACTSome metal plasma techniques have been developed that provide a convenient means for the doping of semiconductor hosts with rare-earths. These plasma and ion beam tools are based on the application of vacuum arc discharges for the formation of dense rare-earth plasmas which then can be used in a number of ways for doping and otherwise introducing the rare-earths into substrate materials. At the low energy end of the spectrum, the streaming metal plasma can be used for the deposition of thin films, and if more than one plasma source is used then of multilayer structures also. Or by building the vacuum-arc rare-earth plasma generator into an ion source configuration, high current ion beams can be produced for doing high energy ion implantation; alternatively the substrate can be immersed in the streaming rare-earth plasma and by using appropriately phased high voltage substrate pulsing and pulsed plasma generation, plasma immersion ion implantation can be done. Between these two limiting techniques – low energy plasma deposition and high energy ion implantation – a spectrum of hybrid methods can be utilized for rare earth doping. We've made a number of plasma and ion sources of this kind, and we've doped a wide range of substrates with a wide range of rare-earths. For example we've implanted species including Sc, Y, La, Ce, Pr, Nd, Sm, Gd, Dy, Ho, Er and Yb into host materials including Si, GaAs, InP and more. The implantation dose can range from a low of about 1013 cm−2 up to as high as about 1017 cm−2, and the ion energy can be varied from a few tens of eV up to about 200 keV. Here we review these vacuum-arc-based plasma methods for rare-earth doping, describing both the tools and techniques that are available and the applications to which we've put the methods in our laboratory.

scholarly journals Plasma Immersion Surface Modification With Metal Ion Plasma

1991 ◽  
Vol 223 ◽  
Author(s):  
I. G. ◽  
X. Godechot ◽  
K. M. Yu
Keyword(s):  
Surface Modification ◽  
Ion Implantation ◽  
Metal Ion ◽  
Plasma Deposition ◽  
Ion Beam ◽  
High Energy ◽  
Ion Beam Mixing ◽  
Metal Plasma ◽  
Modified Surface ◽  
Plasma Guns

ABSTRACTWe describe here a novel technique for surface modification in which a metal plasma is employed and by which various blends of plasma deposition and ion implantation can be obtained. The new technique is a variation of the plasma immersion technique described by Conrad and co-workers. When a substrate is immersed in a metal plasma, the plasma that condenses on the substrate remains there as a film, and when the substrate is then implanted, qualitatively different processes can follow, including ‘conventional’ high energy ion implantation, recoil implantation, ion beam mixing, ion beam assisted deposition, and metallic thin film and multilayer fabrication with or without species mixing. Multiple metal plasma guns can be used with different metal ion species, films can be bonded to the substrate through ion beam mixing at the interface, and multilayer structures can be tailored with graded or abrupt interfaces. We have fabricated several different kinds of modified surface layers in this way.

Surface Modification of Electromagnetic Railgun Components

1993 ◽  
Vol 316 ◽  
Author(s):  
M. A. Otooni ◽  
A. Graf ◽  
C. Dunham ◽  
Ian Brown ◽  
Xiang Yao
Keyword(s):  
Electron Microscopy ◽  
Metal Ion ◽  
High Energy ◽  
Ion Source ◽  
Vacuum Arc ◽  
Sufficient Evidence ◽  
Wear Properties ◽  
Implantation Energy ◽  
Rutherford Back Scattering ◽  
Spark Erosion

ABSTRACTCopper and aluminum used for rail and armature materials in electromagnetic railgun systems undergo severe degradation during the EM gun operation. The extent of this degradation is especially severe in guns operated at high energy levels or designed for repeated firings. In an effort to improve surface properties of the copper rail, armature, and sabot materials, the technique of metal ion implantation using a vacuum arc ion source has been employed. Preliminary tests have been conducted to identify the best implant species to improve spark erosion resistance, scratch resistance and hardness. The implanted species included Al, Ti, Cr, Ni, Ta, Ag, and W. The implantation energy range and dose varied between 100–180 KeV and 0.4 to 2 × 1017 cm-2, respectively . Several analytical techniques were also used to assess the effect of implanted species. These included Rutherford Back Scattering (RBS), Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), Microhardness Measurements, Spark Erosion and Scratch Testing. It has been tentatively concluded that Ta and Ni implantation of the copper rail substantially improve wear and inhibit arc erosion. There is also sufficient evidence to indicate that implantation of the aluminum armature with Cr and Ta, involving two stages of implantation, will also improve its mechanical and wear properties.

Upgraded vacuum arc ion source for metal ion implantation

2012 ◽  
Vol 83 (2) ◽  
pp. 02A501 ◽  
Author(s):  
A. G. Nikolaev ◽  
E. M. Oks ◽  
K. P. Savkin ◽  
G. Yu. Yushkov ◽  
I. G. Brown
Keyword(s):  
Ion Implantation ◽  
Metal Ion ◽  
Ion Source ◽  
Vacuum Arc ◽  
Metal Ion Implantation

A Study of the Structural, Mechanical and Tribological Properties of Ti-Al-N Coatings Post-Treated by Carbon Implantation

2009 ◽  
Vol 75 ◽  
pp. 7-12
Author(s):  
P.W. Shum ◽  
Zhi Feng Zhou ◽  
K.Y. Li
Keyword(s):  
Friction Coefficient ◽  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
High Energy ◽  
Ion Source ◽  
Hard Coatings ◽  
Vacuum Arc ◽  
Metal Vapour ◽  
X Ray ◽  
Mechanical And Tribological Properties

Carbon ion implantation has often been considered as an additional method to further improve the wear, corrosion and oxidation resistance of hard coatings on tools or machine parts. The present research investigates the effect of carbon implantation on the structural and mechanical properties of the sputter-deposited solid solution Ti-Al-N coatings. The carbon implantation was carried out by using metal vapour vacuum arc ion source (MEVVA) with solid cathode at energies of 5 and 50 keV, and a dose of 6×1017 atoms cm-2. The mechanical and the microstructure properties of the implanted layer were identified by a variety of analytic techniques, such as nano-indentation, x-ray photoelectron spectroscopy (XPS) and x-ray diffraction (XRD) etc. Additionally, the wear performance of the samples was evaluated by a typical ball-on-disk tribometer in dry conditions. The results showed that the coatings with high energy carbon implantation exhibited an enhanced hardness. The improved hardness could be attributed to the formation of TiC phase, as indicated in XPS. In the sliding tests, the coatings with the post-treatment of carbon implantation showed an improved tribological property in terms of friction coefficient and wear rate. The friction coefficient could be reduced from 0.6 to 0.1. The coatings had ten-fold better wear resistance than the coating without ion implantation.

scholarly journals Ion Beam Modification of the Y-Ba-Cu-O System with the Mevva High Current Metal Ion Source

1989 ◽  
Vol 147 ◽  
Author(s):  
I. G. Brown ◽  
M. D. Rubin ◽  
K. M. Yu ◽  
R. Mutikainen ◽  
N. W. Cheung
Keyword(s):  
Ion Implantation ◽  
Metal Ion ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Rf Sputtering ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
High Current ◽  
Ion Beam Modification

AbstractWe have used high-dose metal ion implantation to ‘fine tune’ the composition of Y-Ba- Cu-O thin films. The films were prepared by either of two rf sputtering systems. One system uses three modified Varian S-guns capable of sputtering various metal powder targets; the other uses reactive rf magnetron sputtering from a single mixed-oxide stoichiometric solid target. Film thickness was typically in the range 2000–5000 A. Substrates of magnesium oxide, zirconia-buffered silicon, and strontium titanate have been used. Ion implantation was carried out using a metal vapor vacuum arc (MEVVA) high current metal ion source. Beam energy was 100–200 keV, average beam current about 1 mA, and dose up to about 1017 ions/cm2. Samples were annealed at 800 – 900°C in wet oxygen. Film composition was determined using Rutherford Backscattering Spectrometry (RBS), and the resistivity versus temperature curves were obtained using a four-point probe method. We find that the zero-resistance temperature can be greatly increased after implantation and reannealing, and that the ion beam modification technique described here provides a powerful means for optimizing the thin film superconducting properties.

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