Fabrication of A Barium Titanate-Strontium Titanate Strained Layer Superlattice

1995 ◽  
Vol 397 ◽  
Author(s):  
S.D. Harkness ◽  
R.K. Singh
Keyword(s):  
Critical Thickness ◽  
Laser Deposition ◽  
Processing Conditions ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Order Of Magnitude ◽  
Strained Layer Superlattice ◽  
Substrate Temperatures

ABSTRACTA thin film superlattice heterostructure composed of alternating BaTiO3 and SrTiO3 layers was grown on a thin YBa2Cu3O7 electrode templated on a (100) SrTiO3 wafer using the pulsed laser deposition method. Stranski-Krastanov nucleation of the layers was demonstrated using atomic force microscopy (AFM) when processing conditions were maintained at 6 millitorr oxygen partial pressure, and 550 °C substrate temperatures. High-resloution x-ray diffraction (HRXRD) measurements indicate that all the deformation was concentrated in the BaTiO3 layers with c/a extension to approximately 1.08. Rutherford backscattering spectroscopy (RBS) results indicate excellent crystallinity in the heterostructure. The microstructural data suggests that the theoretical critical thickness of the film has been surpassed by an order of magnitude.

Frequency and Temperature Dependence of Dielectric Properties of Orthorhombic HoMnO3 Thin Films

2014 ◽  
Vol 1025-1026 ◽  
pp. 427-431
Author(s):  
Ping Gao ◽  
Wei Zhang ◽  
Wei Tian Wang
Keyword(s):  
Dielectric Properties ◽  
Pulsed Laser ◽  
Signal Amplitude ◽  
Debye Model ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Cole Diagram

Orthorhombic HoMnO3 films were prepared epitaxially on Nb-doped SrTiO3 single crystal substrates by using pulsed laser deposition technique. The films showed perfectly a-axis crystallographic orientations. X-ray diffraction and atomic force microscopy were used to characterize the films. The complex dielectric properties were measured as functions of frequency (40 Hz~1 MHz) and temperature (80 K~300 K) with a signal amplitude of 50 mv. The respective dielectric relaxation peaks shifted to higher frequency as the measuring temperature increased, with the same development of real part of the complex permittivity. The cole-cole diagram was obtained according to the Debye model, and the effects of relaxation process were discussed.

GaZnO as a Transparent Electrode to Silicon Carbide

2012 ◽  
Vol 717-720 ◽  
pp. 849-852
Author(s):  
Jung Ho Lee ◽  
Ji Hong Kim ◽  
Kang Min Do ◽  
Byung Moo Moon ◽  
Sung Jae Joo ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Hall Effect Measurement ◽  
Transparent Electrode ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Structural And Electrical Properties ◽  
Substrate Temperature Increase ◽  
Substrate Temperatures

The characteristics of Ga-doped zinc oxide (GaZnO) thin films deposited at different substrate temperatures (TS~250 to 550oC) on 4H-SiC have been investigated. Structural and electrical properties of GaZnO thin film on n-type 4H-SiC (100)were investigated by using x-ray diffraction, atomic force microscopy (AFM), Hall effect measurement, and Auger electron spectroscopy (AES). Hall mobility is found to increase as the substrate temperature increase from 250 to 550 oC, whereas the lowest resistivity (~3.3 x 10-4 Ωcm) and highest carrier concentration (~1.33x1021cm-3) values are observed for the GaZnO films deposited at 400 oC. It has been found that the c-axis oriented crystalline quality as well as the relative amount of activated Ga3+ Introduction ions may affect the electrical properties of GaZnO films on SiC.

Preparation of Cu(In,Ga)Se2 thin films at low substrate temperatures

2001 ◽  
Vol 16 (2) ◽  
pp. 394-399 ◽  
Author(s):  
S. Nishiwaki ◽  
T. Satoh ◽  
Y. Hashimoto ◽  
T. Negami ◽  
T. Wada
Keyword(s):  
Thin Films ◽  
Surface Composition ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
Monitoring Method ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Substrate Temperatures

Cu(In,Ga)Se2(CIGS) thin films were prepared at substrate temperatures of 350 to 500 °C. The (In,Ga)2Se2 precursor layers were deposited on Mo coated soda-lime glass and then exposed to Cu and Se fluxes to form CIGS films. The surface composition was probed by a real-time composition monitoring method. The CIGS films were characterized by x-ray diffraction, energy dispersive x-ray spectroscopy, secondary ion mass spectroscopy, and atomic force microscopy. The transient formation of a Cu–Se phase with a high thermal emissivity was observed during the deposition of Cu and Se at a substrate temperature of 350 °C. Faster diffusion of In than Ga from the (In,Ga)2Se3 precursor to the newly formed CIGS layer was observed. A growth model for CIGS films during the deposition of Cu and Se onto (In,Ga)2Se3 precursor is proposed. A solar cell using a CIGS film prepared at about 350 °C showed an efficiency of 12.4%.

Heteroepitaxial Growth of Epitaxial C60-Thin Films on Mica(001)

1994 ◽  
Vol 359 ◽  
Author(s):  
S. Henke ◽  
K.H. Thürer ◽  
S. Geier ◽  
B. Rauschenbach ◽  
B. Stritzker
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Room Temperature ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Substrate Temperatures

ABSTRACTOn mica(001) thin C60-films are deposited by thermal evaporation at substrate temperatures from room temperature up to 225°C. The dependence of the structure and the epitaxial alignment of the thin C60-films on mica(001) on the substrate temperature and the film thickness up to 1.3 μm at a well-defined deposition rate (0.008 nm/s) is investigated by atomic force microscopy and X-ray diffraction. The shape and the size of the C60-islands, which have an influence on the film quality at larger film thicknesses, are sensitively dependent on the substrate temperature. At a film thickness of 200 nm the increase of the substrate temperature up to 225°C leads to smooth, completely coalesced epitaxial C60-thin films characterized by a roughness smaller than 1.5 nm, a mosaic spread Δω of 0.1° and an azimuthal alignment ΔΦ of 0.45°.

Research on the Experiment of ZnO Thin Film by Pulsed Laser Deposition

2012 ◽  
Vol 476-478 ◽  
pp. 2379-2383
Author(s):  
Qiang Ke ◽  
Yi Fan Wang ◽  
Ju Ju Hu
Keyword(s):  
Laser Deposition ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Axis Orientation ◽  
X Ray ◽  
Atomic Force ◽  
Experiment Method ◽  
Optimized Conditions ◽  
Substrate Temperatures

Using experiment method, ZnO films are prepared at various substrate temperatures, annealing temperatures and oxygen pressures. The films are examined by X-ray diffraction, atomic force microscope. Through researching the structural and optical properties of ZnO films, optimized conditions for growing ZnO films are obtained. The results suggest that high quality ZnO films with high c-axis orientation can be prepared by pulse laser deposition.

Surface morphology, bioactivity, and antibacterial studies of pulsed laser deposited hydroxyapatite coatings on Stainless Steel 254 for orthopedic implant applications

2016 ◽  
Vol 233 (2) ◽  
pp. 120-127 ◽  
Author(s):  
Ashish Das ◽  
Mukul Shukla
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Orthopedic Implant ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Hydroxyapatite Coatings ◽  
Scanning Electron

Coating of hydroxyapatite using the pulsed laser deposition technique, on medical grade UNS S31254 stainless steel (254SS), to yield a biomaterial for potential orthopedic implant applications, is unreported so far in the literature. In this paper, the pulsed laser deposition process was used to improve the physiological response of 254SS. The surface morphology of the deposited hydroxyapatite coatings was characterized using scanning electron microscopy and atomic force microscopy, while the phase composition of the deposited hydroxyapatite coatings was determined using the X-ray diffraction method. The thickness and adhesive strength of the hydroxyapatite coatings were determined using an ellipsometer and a tensometer, respectively. The antibacterial efficacy of the deposited hydroxyapatite coatings was confirmed using the modern technique of fluorescence-activated cell sorting. Finally, the bioactivity of hydroxyapatite coatings was investigated by conducting immersion test in simulated body fluid environment. The scanning electron microscopy and atomic force microscopy results revealed higher (∼8 nm) average surface roughness, which is likely to facilitate better osseointegration. X-ray diffraction analysis confirmed that postdeposition annealing is essential to achieve the desired crystallinity and uniformity of coatings. Tensile pull-out tests confirmed adhesive strength of hydroxyapatite coatings beyond the standard expected values. Immersion tests inferred high bioactivity of pulsed laser deposition hydroxyapatite coatings. The promising results obtained in this research signify the potential application of hydroxyapatite coatings in orthopedic implants.

The Structural and Morphology of (La0.7Sr0.3)MnO3 Thin Films Prepared by Pulsed Laser Deposition

2010 ◽  
Vol 150-151 ◽  
pp. 908-911 ◽  
Author(s):  
Wei Rao ◽  
Jun Yu
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Perovskite Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

(La0.7Sr0.3)MnO3 (LSMO) thin films were prepared on Si (100) substrate by pulsed laser deposition (PLD). Both structure and surface morphology of the films were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). Furthermore, the chemical states and chemical composition of the films were determined by X-ray photoelectron spectroscopy (XPS) near the surface. The results indicate that the films grown on Si (100) substrates have a single pseudo cubic perovskite phase structure with a high (100) orientation. The XPS results show that La, Sr and Mn exist mainly in the forms of perovskite structure and a SrO layer was found on outermost surface.

Fabrication Of Nd:YVO4 Thin Film Waveguide Grown on Si/SiO2 by Pulsed Laser Deposition

2008 ◽  
Vol 373-374 ◽  
pp. 142-145
Author(s):  
Hong Xia Li ◽  
Ren Guo Song ◽  
Xin Wu ◽  
Ji Yang Wang
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Force Microscopy ◽  
Preparation Conditions ◽  
Atomic Force

High quality Nd:YVO4 thin films were fabricated successfully by using a pulsed laser deposition technique. The properties of the samples were characterized by using X-ray diffraction, atomic force microscopy, and prism-coupling measurements. According to above discussion, we concluded the optimal preparation conditions for Nd:YVO4 films prepared on Si/SiO2 substrates.

X-Ray Photoelectron Spectroscopy of (La0.7Sr0.3)MnO3Thin Films Prepared by Pulsed Laser Deposition

2011 ◽  
Vol 284-286 ◽  
pp. 2191-2197 ◽  
Author(s):  
Hui Fang Xiong ◽  
Tie Dong Cheng ◽  
X.G. Tang ◽  
Jian Chen ◽  
Qiu Xiang Liu
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Perovskite Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

(La0.7Sr0.3)MnO3 (LSMO) thin films were grown on Si (100) substrate by using pulsed laser deposition (PLD) process. Both structure and surface morphology of the films were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). Furthermore, the chemical states and chemical composition of the films were determined by X-ray photoelectron spectroscopy (XPS) near the surface. From XRD, the results indicate that the films grown on Si (100) substrates have a single pseudocubic perovskite phase structure with a high (100) orientation. The XPS results show that La, Sr and Mn exist mainly in the forms of perovskite structure and a SrO layer was found on outermost surface. The films resistivity emeasured under room temperature is 6.4´10-4 W×cm.

Investigation of the Effect of Uv-Assisted Oxidation and Nitridation of Hafnium Metal Films

2003 ◽  
Vol 780 ◽  
Author(s):  
C. Essary ◽  
V. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Uv Radiation ◽  
Photoelectron Spectroscopy ◽  
Grazing Angle ◽  
X Ray Diffraction ◽  
Metal Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Silicon Interface

AbstractHf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.

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