Epitaxial Thin Films and Heterostrcutures of Copper-Oxide-Based Isotropic Metallic Oxides for Device Applications

1995 ◽  
Vol 401 ◽  
Author(s):  
C. B. Eom
Keyword(s):  
Thin Films ◽  
Copper Oxide ◽  
Cuprate Superconductors ◽  
Superconducting Devices ◽  
Epitaxial Thin Films ◽  
Metallic Oxide ◽  
Cross Sectional ◽  
Lattice Match ◽  
Metallic Oxides ◽  
New Family

AbstractWe have grown epitaxial thin films of a new family of copper-oxide-based isotropic metallic oxides such as La6.4Sr1.6Cu8O20, La5BaCu6O13 and La6BaYCu8O20in situ by 900° off-axis sputtering. These metallic oxides are pseudo-cubic perovskites with essentially isotropic properties, which could be ideal normal metals for SNS junctions in superconducting devices. We have also grown epitaxial SNS superconducting heterostructures (c-axis YBa2Cu3O7 / La6.4Sr1.6Cu8O20 / c-axis YBa2Cu3O7) with a copper-oxide-based isotropic metallic oxide (La6.4Sr1.6Cu8O20) normal metal barrier. X-ray diffraction and cross-sectional transmission electron microscopy reveal these heterostructures to have high crystalline quality and clean interfaces. This material will facilitate fabrication of ideal SNS Josephson junctions with low boundary resistance due to its excellent chemical compatibility and lattice match with cuprate superconductors and will be useful for determining the source of interface resistance in such heterostructures.

Epitaxial Thin Films And Heterostrcutures of Various Isotropic Metallic Oxides for Device Applications

1994 ◽  
Vol 341 ◽  
Author(s):  
C. B. Eom ◽  
Julia M. Phillips ◽  
R. J. Cava
Keyword(s):  
Thin Films ◽  
Cuprate Superconductors ◽  
Superconducting Devices ◽  
Epitaxial Thin Films ◽  
Metallic Oxide ◽  
Cross Sectional ◽  
Lattice Match ◽  
Metallic Oxides ◽  
Transmission Electron ◽  
Device Applications

AbstractWe have grown epitaxial thin films of various isotropic metallic oxides such as Sr1-xCaxRuO3 and La8-xSrxCu8O2Oin situ by 90° off-axis sputtering. These metallic oxides are pseudo-cubic perovskites with essentially isotropic properties, which could be ideal normal metals for SNS junctions in superconducting devices and for electrodes in ferroelectric devices. We have fabricated epitaxial ferroelectric heterostructures [SrRuO3/Pb(Zr0. 52 Ti0.4 8) O3 /SrRuO3] employing isotropic metallic oxide (SrRuO3) electrodes on substrates of (100) SrTiO3 and (100) Si with an yttria stabilized zirconia buffer layer. They exhibit superior fatigue characteristics over those made with metal electrodes, showing little degradation over 10 cycles, with a large remnant polarization (27 μC/cm2 ). We have also grown epitaxial superconducting heterostructures (YBa2Cu3O7 / La8-xSrxCu8O2O / YBa2Cu3O7 ) with a copper-oxide-based isotropic metallic oxide (La8-xSrxCu8O20) normal metal barrier. X-ray diffraction and cross-sectional transmission electron microscopy reveal these heterostructures to have high crystalline quality and clean interfaces. This material will facilitate fabrication of ideal SNS Josephson junctions with low boundary resistance due to its excellent chemical compatibility and lattice match with cuprate superconductors and will be useful for determining the source of interface resistance in such heterostructures.

Epitaxial thin films and heterostructures of a copper‐oxide‐based isotropic metallic oxide (La8−xSrxCu8O20)

1995 ◽  
Vol 77 (10) ◽  
pp. 5449-5451 ◽  
Author(s):  
C. B. Eom ◽  
R. J. Cava ◽  
Julia M. Phillips ◽  
D. J. Werder
Keyword(s):  
Thin Films ◽  
Copper Oxide ◽  
Epitaxial Thin Films ◽  
Metallic Oxide

Growth study of epitaxial FexZn1−xF2 thin films

2001 ◽  
Vol 16 (6) ◽  
pp. 1769-1775 ◽  
Author(s):  
J. McChesney ◽  
M. Hetzer ◽  
H. Shi ◽  
T. Charlton ◽  
D. Lederman
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Magnetic Phase Diagram ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
Growth Study ◽  
Lattice Match ◽  
Different Temperatures ◽  
Bulk Single Crystals ◽  
The Ideal

The FexZn1−xF2 alloy has been shown to be a model system for studying the magnetic phase diagram of dilute magnets. Whereas the growth of bulk single crystals with fixed Zn concentrations is difficult, the thin film growth is comparatively simpler and more flexible. To gain an understanding of the growth of FexZn1−xF2 films, a method was developed to grow smooth films at fixed concentrations. This was done by depositing a MgF2 buffer layer on MgF2(001) substrates and then depositing FeF2 and ZnF2 [001]-orientated epitaxial thin films at different temperatures. Surprisingly, the lattice spacing depends strongly on the growth temperature, for 44-nm-thick FeF2 films and 77-nm-thick ZnF2 films. This indicates a significant amount of stress, despite the close lattice match between the films and the MgF2 substrate. Thick alloy samples (approximately 500 nm thick) were grown by co-evaporation from the FeF2 and ZnF2 sources at the ideal temperature determined from the growth study, and their concentration was accurately determined using x-ray diffraction.

Single-Crystal Epitaxial Thin Films of the Isotropic Metallic Oxides Sr1-xCaxRuO3 (0 le x le 1)

Science ◽  
1992 ◽  
Vol 258 (5089) ◽  
pp. 1766-1769 ◽  
Author(s):  
C. B. Eom ◽  
R. J. Cava ◽  
R. M. Fleming ◽  
J. M. Phillips ◽  
R. B. vanDover ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Epitaxial Thin Films ◽  
Metallic Oxides

Heteroepitaxial Bi2Sr2CaCu2Ox Superconducting thin films Deposited on LaA1O3 by Solid Phase Epitaxy and OMCVD

1992 ◽  
Vol 275 ◽  
Author(s):  
J. Chen ◽  
H. A. Lu ◽  
F. DiMeo ◽  
B. W. Wessels ◽  
D. L. Schulz ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Superconducting Thin Films ◽  
Epitaxial Thin Films ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Film Substrate

ABSTRACT-Heteroepitaxial superconducting Bi,Sr2CaCu2Ox (BSCCO 2212) thin films have been formed by solid phase epitaxy from amorphous films deposited on (100) LaA1O3 single crystal substrates by organometallic chemical vapor deposition. The epitaxial structure of the film is confirmed by x-ray diffraction including θ/2θ and Φ (in plane rotation) scans. Cross-sectional high resolution transmission electron microscopy indicates that the film-substrate interface is nearly atomically abrupt. Improvements in superconducting properties of the epitaxial thin films are noted in comparison to highly textured films deposited on MgO.

Structure and Morphology of Epitaxially Intergrown (100)- and (116)-Oriented SrBi2Ta2O9 Ferroelectric Thin Films on SrLaGaO4(110) Substrates

2001 ◽  
Vol 688 ◽  
Author(s):  
H. N. Lee ◽  
D. N. Zakharov ◽  
P. Reiche ◽  
R. Uecker ◽  
D. Hesse
Keyword(s):  
Thin Films ◽  
Volume Fraction ◽  
Scanning Force Microscopy ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Integrated Intensity ◽  
Scanning Force

AbstractSrBi2Ta2O9 (SBT) epitaxial thin films having a mix of (100) and (116) orientations have been grown on SrLaGaO4(110) by pulsed laser deposition. X-ray diffraction θ2 θ and pole figure scans, and cross-sectional transmission electron microscopy (TEM) analyses revealed the presence of two epitaxial orientations, SBT(100) ∥ SLG(110); SBT[001] ∥ SLG[001] and SBT(116) ∥ SLG(110); SBT [110] ∥ SLG[001]. By calculating the integrated intensity of certain x-ray diffraction peaks, it was established that the crystallinity and the in-plane orientation of the (100) and (116) orientation are best at a substrate temperature of 775 °C and 788 °C, respectively, and that the volume fraction of the (100) orientation at about 770 °C reached about 60%. By scanning force microscopy and cross-sectional TEM investigations we found that the a-axisoriented grains are rounded and protrude out due to the rapid growth along the [110] direction, leading to a distinct difference of the surface morphology between (100)- and (116)-oriented grains.

Interfacial Strain Reliefs in Epitaxial YBa2Cu3O7–δ Thin Films Grown on SrTiO3 Buffered MGO Substrates

1997 ◽  
Vol 505 ◽  
Author(s):  
Xingtian Cui ◽  
Q. Y Chen ◽  
Yongxiang Guo ◽  
W. K. Chu
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Rutherford Backscattering Spectrometry ◽  
Epitaxial Thin Films ◽  
Cross Sectional ◽  
Ybco Films ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Edge Dislocations

ABSTRACTHigh quality YBa2Cu3O7–δ, (YBCO) epitaxial thin films grown on MgO substrate with a strainrelieved SrTiO3 (STO) buffer layer have been investigated by Rutherford backscattering spectrometry (RBS), ion channeling and high resolution cross sectional transmission electron microscopy (XTEM). The in-situ growth of STO buffer layer along with the YBCO films was carried out by pulsed laser ablation. In this work, minimum yield of channeling measurements have shown that a very thin STO buffer layer is sufficient to grow highly crystalline YBCO thin films on MgO substrates. TEM studies showed that the STO layers were strain-relieved by an array of periodic edge dislocations. The YBCO films on STO buffer, as in those grown directly on an STO substrate, evolved from a strained layer to a largely dislocation free area.

The Effect of Miscut Angle and Miscut Direction of Vicinal (001) SrTiO3 Substrates on The Domain Structure of Epitaxial SrRuO3 Thin Films

1997 ◽  
Vol 474 ◽  
Author(s):  
Q. Gan ◽  
R. A. Rao ◽  
C.B Eom
Keyword(s):  
Thin Films ◽  
Domain Structure ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
Orthorhombic Unit Cell ◽  
Metallic Oxide ◽  
Force Microscopy ◽  
Atomic Force ◽  
Step Flow Growth ◽  
Miscut Angle

ABSTRACTWe have grown epitaxial thin films of isotropie metallic oxide SrRuC>3 on both exact and vicinal (001) SrTiO3 substrates with miscut angle (α) up to 5.0° and miscut direction (β) up to 37° away from the in-plane [010] axis. The effects of both α and β on the epitaxial growth and domain structure of epitaxial SrRuC>3 thin films were studied by x-ray diffraction and atomic force microscopy (AFM). On vicinal SrTiO3 substrates with a large miscut angle (α = 1.7°, 2.0°, 4.1°, and 5.0°) and miscut direction close to the [010] axis, single crystal epitaxial (110)° SrRuO3 thin films were obtained. [The superscript o refers to the Miller indices based on the orthorhombic unit cell.] Decreasing the substrate miscut angle or aligning the miscut direction close to the [110] axis (β = 45°) resulted in an increase of 90° domains in the plane. The films grown on vicinal substrates displayed a significant improvement in crystalline quality and in-plane epitaxial alignment as compared to the films grown on exact (001) SrTiO3 substrates. AFM revealed that as the miscut angle increased the growth mechanism changed from two dimensional nucleation to step flow growth.

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