Growth study of epitaxial FexZn1−xF2 thin films

2001 ◽  
Vol 16 (6) ◽  
pp. 1769-1775 ◽  
Author(s):  
J. McChesney ◽  
M. Hetzer ◽  
H. Shi ◽  
T. Charlton ◽  
D. Lederman
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Magnetic Phase Diagram ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
Growth Study ◽  
Lattice Match ◽  
Different Temperatures ◽  
Bulk Single Crystals ◽  
The Ideal

The FexZn1−xF2 alloy has been shown to be a model system for studying the magnetic phase diagram of dilute magnets. Whereas the growth of bulk single crystals with fixed Zn concentrations is difficult, the thin film growth is comparatively simpler and more flexible. To gain an understanding of the growth of FexZn1−xF2 films, a method was developed to grow smooth films at fixed concentrations. This was done by depositing a MgF2 buffer layer on MgF2(001) substrates and then depositing FeF2 and ZnF2 [001]-orientated epitaxial thin films at different temperatures. Surprisingly, the lattice spacing depends strongly on the growth temperature, for 44-nm-thick FeF2 films and 77-nm-thick ZnF2 films. This indicates a significant amount of stress, despite the close lattice match between the films and the MgF2 substrate. Thick alloy samples (approximately 500 nm thick) were grown by co-evaporation from the FeF2 and ZnF2 sources at the ideal temperature determined from the growth study, and their concentration was accurately determined using x-ray diffraction.

Structural and Surface Morphology Changes in CuInSe2 Thin Films as a Function of Cu/In Ratio

1996 ◽  
Vol 441 ◽  
Author(s):  
P. Fons ◽  
S. Niki ◽  
A. Yamada ◽  
D. J. Tweet
Keyword(s):  
Thin Films ◽  
Molecular Beam ◽  
Morphological Changes ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
The Ideal

AbstractDue to its high near bandedge absorption, CuInSe2 is considered to be one of the most promising solar cell materials. As CuInSe2 films are usually grown by metastable processes, the Cu/In ratio often deviates from the ideal ratio of unity. To investigate the structural and morphological changes induced by such stoichiometric variations we have grown a series of epitaxial CuInSe2 epitaxial thin films with varying Cu/In ratios by molecular beam epitaxy on GaAs(001) substrates from elemental sources at a growth temperature of 450° C. Overall structural, microstructural and surface morphological changes were observed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy, respectively. It was observed that as films deviated from stoichiometry, twinning occurred preferentially on the anion {1 · 1 · 2} planes.

Spontaneous Transformations in the Solid State: Towards Porous and Biphasic Materials

2006 ◽  
Vol 988 ◽  
Author(s):  
Eric S. Toberer ◽  
Ram Seshadri
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solid State ◽  
Single Crystal ◽  
Crystal Lattice ◽  
Film Growth ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
Epitaxial Relationship ◽  
X Ray

AbstractEpitaxial thin films of Mn3O4 and ZnMn2O4 have been grown hydrothermally on (100) and (111) MgAl2O4 substrates. Film growth was characterized as a function of pH, concentration, and time and thin film X-ray diffraction revealed that the resulting films are an epitaxial continuation of the underlying spinel lattice. Reduction of these films to MnO occurred topotactically and in the case of ZnMn2O4, resulted in mesopores aligned along the <100> directions. As the films maintain an epitaxial relationship with the substrate, the mesopores are aligned macroscopically within a single crystal lattice.

Substrate Temperature and La0.9Sr0.1Ga0.8Mg0.2O3-δ Electrolyte Film Growth by Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 833 ◽  
pp. 127-133
Author(s):  
Jie Yu ◽  
Jie Xing ◽  
Xiu Hua Chen ◽  
Wen Hui Ma ◽  
Rui Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Radio Frequency ◽  
Film Growth ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrolyte Film ◽  
Porous Anode

La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolyte thin films were fabricated on La0.7Sr0.3Cr0.5Mn0.5O2.75 (LSCM) porous anode substrates by Radio Frequency (RF) magnetron sputtering method. The compatibility between LSGM and LSCM was examined. Microstructures of LSGM thin films fabricated were observed by scanning electron microscope (SEM). The effect of substrate temperature on LSGM thin films was clarified by X-ray Diffraction (XRD). Deposition rate increases firstly at the range of 50°C~150°C, and then decreases at the range of 150°C ~300°C. After annealing, perovskite structure with the same growth orientation forms at different substrate temperature. Crystallite size decreases at first, to the minimum point at 150°C, then increases as substrate temperature rises.

scholarly journals Donald William Pashley. 21 April 1927 — 16 May 2009

2010 ◽  
Vol 56 ◽  
pp. 317-340 ◽  
Author(s):  
Bruce A. Joyce ◽  
Michael J. Stowell
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Electron Diffraction ◽  
Film Growth ◽  
Epitaxial Thin Films ◽  
Disorder Effects ◽  
Transmission Electron ◽  
Innovative Materials ◽  
Low Dimensional

Donald William (Don) Pashley was one of the most innovative materials scientists of his generation. He was distinguished for his electron diffraction and transmission electron microscope studies of epitaxial thin films, especially for in situ investigations, work that contributed enormously to our understanding of film growth processes. He pioneered the use of moiré patterns to reveal dislocations and other defects. He also made important contributions to long-range disorder effects on semiconductor surfaces and to the structure of low-dimensional semiconductor systems.

LUMINESCENT PROPERTIES OF SOL-GEL DEPOSITED Eu:TiO2 THIN FILMS

2001 ◽  
Vol 15 (17n19) ◽  
pp. 769-773 ◽  
Author(s):  
M. GARCIA-ROCHA ◽  
A. CONDE-GALLARDO ◽  
I. HERNANDEZ-CALDERON ◽  
R. PALOMINO-MERINO
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Luminescent Properties ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Glass Substrates ◽  
Corning Glass ◽  
Different Temperatures ◽  
Hecd Laser

In this work we show the results on tile growth and optical characterization of TiO 2 thin films doped with Eu atoms. Eu:TiO2 films were grown at room temperature with different Eu concentrations by sol-gel on Si Corning glass substrates. A different crystalline structure is developed for the films deposited on Corning glass than those deposited on Si as observed from x-ray diffraction experiments. Room and low temperature photoluminescence (PL) was measured by using two different lines (325 and 442 nm) of a HeCd laser. A strong PL signal associated to the 5 D 0→7 F 2 transition from Eu +3 was observed. A better emission was obtained from those films deposited on Si substrates, Finally, the evolution of the PL signal is studied when the samples are annealed at different temperatures in O 2 atmosphere.

THE INFLUENCE OF SYNTHESIZING TEMPERATURES ON THE PROPERTIES OF THE Cu/Sn/ZnS PRECURSOR THIN FILMS

2015 ◽  
Vol 22 (01) ◽  
pp. 1550009
Author(s):  
YA MING SUN ◽  
DONG LONG ◽  
XIANG CHENG MENG ◽  
ZHONG HUA ◽  
BO LI ◽  
...  
Keyword(s):  
Thin Films ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Wave Band ◽  
X Ray Diffraction ◽  
Sem Images ◽  
Different Temperatures ◽  
Microstructure Morphology ◽  
Uv Visible ◽  
Precursor Thin Film

Cu 2 ZnSnS 4 thin films were prepared on soda-lime glass by sulfurization of the Cu / Sn / ZnS precursors. The microstructure, morphology and optical properties of the films were investigated by X-ray diffraction (XRD), Raman scattering (Raman), scanning electron microscopy (SEM) and UV-visible spectrophotometer (UV-Vis). The SEM images of the precursor and the thin films annealed at different temperatures are very different due to their different surface products. The absorption spectrum shifts to high-wave band region with increasing annealing temperatures. The precursor thin film annealed at 500°C for 2 h forms a single CZTS phase with kesterite structure and the bandgap is estimated to be 1.54 eV.

Impact of Heat Treatment on the Electrical Properties of LaNiO3 Conductive Thin Films

2007 ◽  
Vol 280-283 ◽  
pp. 873-876
Author(s):  
Sheng Guo Lu ◽  
Haydn Chen
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Good Adhesion ◽  
Electrode Layer ◽  
Annealing Conditions ◽  
Post Annealing ◽  
Conductive Thin Films ◽  
The Ideal

LaNiO3 (LNO) has been used as bottom electrode layer for ferroelectric and antiferroelectric thin films due to its good conduction, preferred (100) orientation, same crystalline structure as many perovskite ferroelectrics and antiferroelectrics, good adhesion and compatibility with the Pt/Ti/SiO2/Si template. In this study we have investigated the ideal optimal post - annealing conditions for LaNiO3 thin films deposited at 450°C using a magnetron sputtering method. Heat treatment from 500 to 1200°C was performed. Scanning electron microscopy (SEM), x-ray diffraction (XRD) and electrical measurements were carried out to characterize the morphology, structure, and macroscopic properties. Results indicated that the LNO film had the best quality when annealed at about 800°C. Above this temperature, the morphology, structure and associated properties would deteriorate.

Low Temperature Aqueous Polymeric Precursor Processing of ZnO:Er Using a Glycerol Chelating Agent

2006 ◽  
Vol 957 ◽  
Author(s):  
Uma Choppali ◽  
Brian P Gorman
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Doping Concentration ◽  
Compressive Strain ◽  
Chelating Agent ◽  
X Ray Diffraction ◽  
Er Doping ◽  
Structural And Electrical Properties ◽  
Different Temperatures ◽  
Surface Modified

ABSTRACTErbium doped ZnO (ZnO:Er) is considered to be a suitable candidate for fabrication of the current injection optical devices. Although ZnO: Er thin films have been synthesized previously by pulsed laser deposition, we present low – temperature processed ZnO:Er thin films from polymeric precursors. In this work, we study the effect of variation of Er doping concentration on the structural and electrical properties of the synthesized films. ZnO nanoparticles of varied Er doping concentration, derived from the prepared polymeric solution, has been spin – coated onto surface modified substrates, and annealed at different temperatures. The effect of Er doping concentration on film grain size and strain was analyzed using X-ray diffraction. XRD data reveals that doping of Er ions reduces compressive strain considerably in the films. It is speculated that the presence of larger Er cations in ZnO cause tensile stress, which neutralizes the inherent compressive stress, observed in undoped ZnO, significantly decreasing and hence, making the films stress free. Crystallite size of ZnO:Er thin films, annealed at 600°C, was calculated to be approximately 12 nm using Scherrer's equation. The surface morphology of the thin films was characterized by both SEM and AFM. Electrical resistivity of the films, annealed at 450oC, was calculated to be 290 Ω-m for 5 at wt% and 125 Ω-m for 10 at wt% ZnO:Er films.

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