Structure and Morphology of Epitaxially Intergrown (100)- and (116)-Oriented SrBi2Ta2O9 Ferroelectric Thin Films on SrLaGaO4(110) Substrates

2001 ◽  
Vol 688 ◽  
Author(s):  
H. N. Lee ◽  
D. N. Zakharov ◽  
P. Reiche ◽  
R. Uecker ◽  
D. Hesse
Keyword(s):  
Thin Films ◽  
Volume Fraction ◽  
Scanning Force Microscopy ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Integrated Intensity ◽  
Scanning Force

AbstractSrBi2Ta2O9 (SBT) epitaxial thin films having a mix of (100) and (116) orientations have been grown on SrLaGaO4(110) by pulsed laser deposition. X-ray diffraction θ2 θ and pole figure scans, and cross-sectional transmission electron microscopy (TEM) analyses revealed the presence of two epitaxial orientations, SBT(100) ∥ SLG(110); SBT[001] ∥ SLG[001] and SBT(116) ∥ SLG(110); SBT [110] ∥ SLG[001]. By calculating the integrated intensity of certain x-ray diffraction peaks, it was established that the crystallinity and the in-plane orientation of the (100) and (116) orientation are best at a substrate temperature of 775 °C and 788 °C, respectively, and that the volume fraction of the (100) orientation at about 770 °C reached about 60%. By scanning force microscopy and cross-sectional TEM investigations we found that the a-axisoriented grains are rounded and protrude out due to the rapid growth along the [110] direction, leading to a distinct difference of the surface morphology between (100)- and (116)-oriented grains.

Sol-gel derived Ba(Mg1/3Ta2/3)O3 thin films: Preparation and structure

1997 ◽  
Vol 12 (3) ◽  
pp. 596-599 ◽  
Author(s):  
Ji Zhou ◽  
Qing-Xin Su ◽  
K. M. Moulding ◽  
D. J. Barber
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Volume Fraction ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Sol Gel Process ◽  
Small Grains

Ba(Mg1/3Ta2/3)O3 thin films were prepared by a sol-gel process involving the reaction of barium isopropoxide, tantalum ethoxide, and magnesium acetate in 2-methoxyethanol and subsequently hydrolysis, spin-coating, and heat treatment. Transmission electron microscopy, x-ray diffraction, and Raman spectroscopy were used for the characterization of the thin films. It was shown that the thin films tend to crystallize with small grains sized below 100 nm. Crystalline phase with cubic (disordered) perovskite structure was formed in the samples annealed at a very low temperature (below 500 °C), and well-crystallized thin films were obtained at 700 °C. Although disordered perovskite is dominant in the thin films annealed below 1000 °C, a low volume fraction of 1 : 2 ordering domains was found in the samples and grows with an increase of annealing temperature.

scholarly journals Structural Property Study for GeSn Thin Films

Materials ◽  
2020 ◽  
Vol 13 (16) ◽  
pp. 3645
Author(s):  
Liyao Zhang ◽  
Yuxin Song ◽  
Nils von den Driesch ◽  
Zhenpu Zhang ◽  
Dan Buca ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Threading Dislocations ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

The structural properties of GeSn thin films with different Sn concentrations and thicknesses grown on Ge (001) by molecular beam epitaxy (MBE) and on Ge-buffered Si (001) wafers by chemical vapor deposition (CVD) were analyzed through high resolution X-ray diffraction and cross-sectional transmission electron microscopy. Two-dimensional reciprocal space maps around the asymmetric (224) reflection were collected by X-ray diffraction for both the whole structures and the GeSn epilayers. The broadenings of the features of the GeSn epilayers with different relaxations in the ω direction, along the ω-2θ direction and parallel to the surface were investigated. The dislocations were identified by transmission electron microscopy. Threading dislocations were found in MBE grown GeSn layers, but not in the CVD grown ones. The point defects and dislocations were two possible reasons for the poor optical properties in the GeSn alloys grown by MBE.

Structural Transitions in Titanium/Amorphous-Silicon Multilayers

1989 ◽  
Vol 163 ◽  
Author(s):  
E. Ma ◽  
L.A. Clevenger ◽  
C.V. Thompson ◽  
R.R. DeAvillez ◽  
K.N. Tu
Keyword(s):  
Thin Films ◽  
Exothermic Reaction ◽  
Heat Of Formation ◽  
Structural Transitions ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
Calorimetric Analysis ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

We report a quantitative investigation of silicidation in Ti/amorphous-Si thin-films using Differential Scanning Calorimetry (DSC), thin-film X-ray diffraction and Cross-sectional Transmission Electron Microscopy (XTEM). Multilayered thin films were used to facilitate calorimetric observation of the heat released or absorbed at many reacting interfaces. It is shown that calorimetric analysis, combined with structural analysis using X-ray diffraction and XTEM, is effective in providing both kinetic and thermodynamic information about interdiffusion reactions in thin films. The present paper describes experimental results for multilayers with an atomic concentration ratio of 1 Ti to 2 Si and modulation periods ranging from 10 to 60 nm. A thin amorphous titanium suicide layer was found to exist between the as-deposited Ti and a-Si layers. Heating the multilayer film caused the amorphous Ti-silicide to grow over a broad temperature range by an exothermic reaction. An endothermic relaxation occurs during the late stage of amorphous suicide growth. Heating to temperatures over 800K causes C49-TiSi2 to form at the a-si1icide/a-Si interface. Temperatures at which all the above structural transitions occur vary with modulation period. Analysis of the DSC data indicates an activation energy of 3.1 eV for the formation of C49-TiSio, which is attributed to both the nucleation and the early growth of the suicide. The heat of formation for C49-TiSi2 from a reaction of a-silicide and a-Si was found to be -30±5KJ/mol. Nucleation appears to be the controlling step in C49-TiSi2 formation.

Investigation of Hydrogen Storage Using Combinatorial Thin Films and IR Imaging

2007 ◽  
Vol 1042 ◽  
Author(s):  
Hiroyuki Oguchi ◽  
Ichiro Takeuchi ◽  
Daniel Josell ◽  
Edwin J Heilweil ◽  
Leonid A Bendersky
Keyword(s):  
Thin Films ◽  
Hydrogen Absorption ◽  
Compositional Variation ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Ir Camera ◽  
Deposition Chamber ◽  
X Ray ◽  
Transmission Electron ◽  
Beam Deposition

AbstractThree 100 nm-thick Mgx(TM)1-x (TM = Ni and Ti) composition spread thin films having compositional variation 0.4<x<0.95 and capped with a 5 nm-thick Pd layer were deposited in combinatorial electron-beam (e-beam) deposition chamber. Crystallinity of the films was characterized by scanning x-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM). Hydrogen absorption and desorption of the films were monitored with an infrared (IR) camera that could image a full area of the films. The observed changes in IR intensity due to hydrogen absorption/desorption demonstrated sensitivity of the method to the differences in compostion, microstructure and type of TM.

Heteroepitaxial Bi2Sr2CaCu2Ox Superconducting thin films Deposited on LaA1O3 by Solid Phase Epitaxy and OMCVD

1992 ◽  
Vol 275 ◽  
Author(s):  
J. Chen ◽  
H. A. Lu ◽  
F. DiMeo ◽  
B. W. Wessels ◽  
D. L. Schulz ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Superconducting Thin Films ◽  
Epitaxial Thin Films ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Film Substrate

ABSTRACT-Heteroepitaxial superconducting Bi,Sr2CaCu2Ox (BSCCO 2212) thin films have been formed by solid phase epitaxy from amorphous films deposited on (100) LaA1O3 single crystal substrates by organometallic chemical vapor deposition. The epitaxial structure of the film is confirmed by x-ray diffraction including θ/2θ and Φ (in plane rotation) scans. Cross-sectional high resolution transmission electron microscopy indicates that the film-substrate interface is nearly atomically abrupt. Improvements in superconducting properties of the epitaxial thin films are noted in comparison to highly textured films deposited on MgO.

Deposition and characterization of crystalline conductive RuO2 thin films

1995 ◽  
Vol 10 (10) ◽  
pp. 2401-2403 ◽  
Author(s):  
Q.X. Jia ◽  
S.G. Song ◽  
S.R. Foltyn ◽  
X.D. Wu
Keyword(s):  
Thin Films ◽  
Room Temperature Resistivity ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Residual Resistance ◽  
X Ray ◽  
Transmission Electron ◽  
Residual Resistance Ratio ◽  
Temperature Resistivity

Highly conductive metal-oxide RuO2 thin films have been successfully grown on yttria-stabilized zirconia (YSZ) substrates by pulsed laser deposition. Epitaxial growth of RuO2 thin films on YSZ and the atomically sharp interface between the RuO2 and the YSZ substrate are clearly evident from cross-sectional transmission electron microscopy. A diagonal-type epitaxy of RuO2 on YSZ is confirmed from x-ray diffraction measurements. The crystalline RuO2 thin films, deposited at temperatures in the range of 500 °C to 700 °C, have a room-temperature resistivity of 35 ± 2 μω-cm, and the residual resistance ratio (R300 k/R4.2 k) is around 5 for the crystalline RuO2 thin films.

Structural and Surface Morphology Changes in CuInSe2 Thin Films as a Function of Cu/In Ratio

1996 ◽  
Vol 441 ◽  
Author(s):  
P. Fons ◽  
S. Niki ◽  
A. Yamada ◽  
D. J. Tweet
Keyword(s):  
Thin Films ◽  
Molecular Beam ◽  
Morphological Changes ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
The Ideal

AbstractDue to its high near bandedge absorption, CuInSe2 is considered to be one of the most promising solar cell materials. As CuInSe2 films are usually grown by metastable processes, the Cu/In ratio often deviates from the ideal ratio of unity. To investigate the structural and morphological changes induced by such stoichiometric variations we have grown a series of epitaxial CuInSe2 epitaxial thin films with varying Cu/In ratios by molecular beam epitaxy on GaAs(001) substrates from elemental sources at a growth temperature of 450° C. Overall structural, microstructural and surface morphological changes were observed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy, respectively. It was observed that as films deviated from stoichiometry, twinning occurred preferentially on the anion {1 · 1 · 2} planes.

FORMATION AND MICROSTRUCTURE OF (105)-ORIENTED EPITAXIAL THIN FILMS OF YBa2Cu3O7-δ

1997 ◽  
Vol 04 (04) ◽  
pp. 679-685
Author(s):  
Y. YANG ◽  
J. GAO ◽  
T. C. CHUI
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Substrate Surface ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
Strong Anisotropy ◽  
X Ray ◽  
Transmission Electron ◽  
Stepped Surface ◽  
Means Of Transmission

The formation and microstructure of the YBa 2 Cu 3 O 7-δ thin films grown on (305) SrTiO 3 substrates have been studied by means of transmission electron microscopy, X-ray diffraction analysis and scanning electron microscopy. YBa 2 Cu 3 O 7-δ was epitaxially grown on the stepped surface of such tilted substrates with an angle of 31° between its c axis and the substrate surface normal, forming the (105)-oriented films. A common feature of this kind of films is that small antidomains are nucleated in the initial growing stage. However, the further growth of these antidomains is depressed by the growth of YBa 2 Cu 3 O 7-δ with the desired orientation, leading to the formation of a single domain film. The surface of the (105) YBa 2 Cu 3 O 7-δ films is significantly rougher than that of c axis films but smoother than that of some other tilted films. Strong anisotropy of the transport properties has also been found in the [010] and [Formula: see text] directions of the (105) YBa 2 Cu 3 O 7-δ films.

scholarly journals Synthesis and Properties of Epitaxial Thin Films of c-axis Oriented Metastable Four-Layered Hexagonal BaRuO3

1999 ◽  
Vol 602 ◽  
Author(s):  
M. K. Lee ◽  
C. B. Eom ◽  
W. Tian ◽  
X. Q. Pan ◽  
M. C. Smoak ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Room Temperature ◽  
Layered Compounds ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Novel Device ◽  
Transmission Electron ◽  
Device Applications

AbstractWe have grown epitaxial thin films of metastable four-layered hexagonal (4H) BaRuO3 on (111) SrTiO3 by 90° off-axis sputtering techniques. X-ray diffraction and transmission electron microscopy experiments reveal that the films are single crystals of c-axis 4H structures with an inplane epitaxial arrangement of BaRuO3 [2110] // SrTiO3 [110]. Smooth multilayer growth has been observed in these films with a step height equaling the size of half unit cell. In-plane resistivity of the films is metallic, with a room temperature value of about 810µΩ-cm and slightly curved temperature dependence. Their magnetic susceptibility is paramagnetic. The metastable layered compounds can be very useful for understanding new solid-state phenomena and novel device applications.

Spectroscopic study of La2O3 thin films deposited by indigenously developed plasma-enhanced atomic layer deposition system

2018 ◽  
Vol 32 (19) ◽  
pp. 1840074 ◽  
Author(s):  
Viral Barhate ◽  
Khushabu Agrawal ◽  
Vilas Patil ◽  
Sumit Patil ◽  
Ashok Mahajan
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Spectroscopic Study ◽  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Layer Deposition

The spectroscopic study of La2O3 thin films deposited over Si and SiC at low RF power of 25 W by using indigenously developed plasma-enhanced atomic layer deposition (IDPEALD) system has been investigated. The tris (cyclopentadienyl) lanthanum (III) and O2 plasma were used as a source precursor of lanthanum and oxygen, respectively. The [Formula: see text]1.2 nm thick La2O3 over SiC and Si has been formed based on our recipe confirmed by means of cross-sectional transmission electron microscopy. The structural characterization of deposited films was performed by means of X-ray photoelectron Spectroscopy (XPS) and X-ray Diffraction (XRD). The XPS result confirms the formation of 3[Formula: see text] oxidation state of the lanthania. The XRD results reveals that, deposited La2O3 films deposited on SiC are amorphous in nature compare to that of films on Si. The AFM micrograph shows the lowest roughness of 0.26 nm for 30 cycles of La2O3 thin films.

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