Afm/Tem Investigation of Low Temperature Polycrystalline Silicon Grown by ECR-CVD

1995 ◽  
Vol 406 ◽  
Author(s):  
H. L. Hsiao ◽  
K. C. Wang ◽  
L. W. Cheng ◽  
A. B. Yang ◽  
T. R. Yew ◽  
...  
Keyword(s):  
Low Temperature ◽  
Polycrystalline Silicon ◽  
Electron Cyclotron Resonance ◽  
Film Growth ◽  
Chemical Vapor ◽  
Plan View ◽  
3 Dimensional ◽  
High Resolution Tem ◽  
Si Films ◽  
Polycrystalline Silicon Films

AbstractThe polycrystalline silicon films were deposited by electron cyclotron resonance chemical vapor deposition (ECR-CVD) with hydrogen dilution at 250°C and without any thermal annealing. The surface morphology and the microstructure of the poly-Si films are investigated by atomic force microscopy (AFM), plan-view transmission electron microscopy (TEM), crosssectional TEM and high resolution TEM (HRTEM). The low temperature poly-Si films deposited by ECR-CVD show a special leaf-like grain shape (plan-view) and an upside-down cone shape (3-dimensional view). The grains in the poly-Si films have preferred orientation of <112> and the longer side of the leaf-like grain is direction and the shorter side is direction. Lattice bending and interruption are found in the films. The arrangement of the atoms on the grains are well ordered, while atoms in the interfacial regions are randomly distributed. A simple grain formation model based on growth rate differences between different planes and etching effect can explain the film growth mechanism and the formation of the special grain geometry.

Structure of Polycrystalline Silicon Films by Glow-Discharge Decomposition using SiH4/H2/SiF4 at Low Temperature

1999 ◽  
Vol 581 ◽  
Author(s):  
R. Tsuchida ◽  
M. Syed ◽  
T. Inokuma ◽  
Y. Kurata ◽  
S. Hasegawa
Keyword(s):  
Power Supply ◽  
Vapor Deposition ◽  
Local Structure ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
High Angle Boundary ◽  
Rf Power ◽  
Nanocrystalline Structures ◽  
Si Films ◽  
Polycrystalline Silicon Films

ABSTRACTFor poly-Si films prepared by a plasma-enhanced chemical vapor deposition, we examined the changes in the local structure caused by adding H2 and/or SiF4 in the SiH4 feed gases and by changing supplied rf power values. The conditions of low rf power supply, low H2 addition, and SiF4 addition allow formation of films with microcrystalline or nanocrystalline structures. In addition, the H2 or SiF4 addition was found to be effective in promotive growth of <111> or <110> grains, respectively. In such low crystallized films, it was suggested that high-angle boundary would be formed, leading to a decrease in the density of SiH2 and Si dangling bonds, and to an increase in g values.

scholarly journals P-doped polycrystalline silicon films obtained at low temperature by hot-wire chemical vapor deposition

1995 ◽  
Vol 86 (1-4) ◽  
pp. 600-603 ◽  
Author(s):  
J. Puigdollers ◽  
J. Cifre ◽  
M.C. Polo ◽  
J.M. Asensi ◽  
J. Bertomeu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Hot Wire ◽  
Polycrystalline Silicon Films

Grain Enhancement of Polycrystalline Silicon Films Aided by Optical Excitation

1997 ◽  
Vol 485 ◽  
Author(s):  
B. L. Sopori ◽  
W. Chen ◽  
J. Alleman ◽  
R. Matson ◽  
N. M. Ravindra ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Low Temperatures ◽  
Polycrystalline Silicon ◽  
Optical Excitation ◽  
Grain Sizes ◽  
Si Solar Cells ◽  
A New Technique ◽  
Si Films ◽  
Polycrystalline Silicon Films

AbstractA new technique for making large-grain thin Si films is described in which optical excitation is used to enhance the grain growth. Grain sizes much larger than the film thickness can be obtained at low temperatures and in short process times. This method is well suited for making thin-film Si solar cells on low-temperature substrates.

Polycrystalline Silicon Films on SiO2 Substrate Treated by Excimer Laser Annealing

2013 ◽  
Vol 750-752 ◽  
pp. 946-951
Author(s):  
Chun Yan Duan ◽  
Bin Ai ◽  
Rong Xue Li ◽  
Chao Liu ◽  
Jian Jun Lai ◽  
...  
Keyword(s):  
Grain Size ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Laser Energy ◽  
Chemical Vapor ◽  
Excimer Laser Annealing ◽  
Before And After ◽  
Si Films ◽  
Polycrystalline Silicon Films

Selected area laser-annealed polycrystalline silicon (p-Si) thin films were prepared by a 248 nm excimer laser. 1 μm thick p-Si films with grain size less than 100 nm were deposited on SiO2substrate by chemical vapor deposition using atmospheric pressure (APCVD). Grain sizes before and after annealing was examined by scanning electron microscopy (SEM) and the mechanism of grain growth was discussed in detail. The maximum grain size of a selected area laser-annealed p-Si film can be increased from 100 nm up to 2.9 μm on SiO2substrate by using appropriate laser energy densities. It indicated that silicon grains in laser-annealed regions had grown up competitively with three stages.

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