In-Situ Etch to Improve Chemical Beam Epitaxy Regrown AlgaAs/GaAs Interfaces for HBT Applications

1996 ◽  
Vol 448 ◽  
Author(s):  
Y.M. Hsin ◽  
N. Y. Li ◽  
C. W. Tu ◽  
P. M. Asbeck
Keyword(s):  
Etching Rate ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Chemical Beam Epitaxy ◽  
Capacitance Voltage ◽  
Substrate Temperatures ◽  
Etching Effect

AbstractWe have studied the etching effect of AlxGa1-xAs (0≤ x ≤ 0.5) by trisdimethylaminoarsenic (TDMAAs) at different substrate temperatures, and the quality of the resulting etched/regrown GaAs interface. We find that the etching rate of AlxGa1-x As decreases with increasing Al composition, and the interface trap density of the TDMAAs etched/regrown interface can be reduced by about a factor of 10 as deduced from capacitance-voltage carrier profiles. A smooth surface morphology of GaAs with an interface state density of 1.4×l011 cm−2 can be obtained at a lower in-situ etching temperature of 550°C. Moreover, by using this in-situ etching the I-V characteristics of regrown p-n junctions of Al0.35Ga0.65As/Al0.25Ga0.75As and Al0.35Ga0.65As/GaAs can be improved.

Low Interface State Density Oxide-GaAs Structures Fabricated by In-Situ Molecular Beam Epitaxy

1996 ◽  
Vol 421 ◽  
Author(s):  
M. Passlack ◽  
M. Hong
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beams ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
In Situ Deposition ◽  
Interface Recombination Velocity ◽  
Recombination Velocity

AbstractWe have extended the spectrum of molecular-beam epitaxy (MBE) related techniques by introducing in-situ deposition of oxides. The oxide films have been deposited on clean, atomically ordered (100) GaAs wafer surfaces using molecular beams of gallium-, magnesium-, silicon-, or aluminum oxide. Among the fabricated oxide-GaAs heterostructures, Ga2O3-GaAs interfaces exhibit unique electronic properties including an interface state density Dit in the low 1010 cm−2eV−1 range and an interface recombination velocity S of 4000 cm/s. The formation of inversion layers in both n- and p-type GaAs has been clearly established. Further, thermodynamic and photochemical stability of excellent electronic interface properties of Ga2O3-GaAs structures has been demonstrated.

Enhanced Channel Mobility in 4H-SiC MISFETs by Utilizing Deposited SiN/SiO2 Stack Gate Structures

2008 ◽  
Vol 600-603 ◽  
pp. 679-682 ◽  
Author(s):  
Masato Noborio ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Post Deposition Annealing ◽  
Interface Quality ◽  
Channel Mobility ◽  
Capacitance Voltage ◽  
Mis Capacitors ◽  
Post Deposition ◽  
Time Lead

Deposited SiN/SiO2 stack gate structures have been investigated to improve the 4H-SiC MOS interface quality. Capacitance-voltage measurements on fabricated SiN/SiO2 stack gate MIS capacitors have indicated that the interface state density is reduced by post-deposition annealing in N2O at 1300°C. The usage of thin SiN and increase in N2O-annealing time lead to a low interface state density of 1×1011 cm-2eV-1 at EC – 0.2 eV. Oxidation of the SiN during N2O annealing has resulted in improvement of SiC MIS interface. The fabricated SiN/SiO2 stack gate MISFETs demonstrate a high channel mobility of 32 cm2/Vs on (0001)Si face and 40 cm2/Vs on (000-1)C face.

Capacitance-Voltage and Interface State Density Characteristics of GaAs and In0.53Ga0.47As MOS Capacitors Incorporating a PECVD Si3N4 Dielectric

2019 ◽  
Vol 35 (3) ◽  
pp. 415-430 ◽  
Author(s):  
Eamon O'Connor ◽  
Vladimir Djara ◽  
Scott Monaghan ◽  
Paul Hurley ◽  
Karim Cherkaoui
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Mos Capacitors ◽  
Capacitance Voltage

Properties of Catalytic CVD SiNx For Antireflection Coatings

1998 ◽  
Vol 555 ◽  
Author(s):  
A. Izumi ◽  
H. Matsumura
Keyword(s):  
Vapor Deposition ◽  
Etching Rate ◽  
Chemical Vapor ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Flow Ratio ◽  
Antireflection Coatings ◽  
Cvd Method ◽  
Insulating Properties

AbstractWe propose a novel preparation of high quality silicon nitride (SiNx) films by catalytic chemical vapor deposition (Cat-CVD) method for the application of antireflection coatings. It is found that the refractive index (n) of the Cat-CVD SiNx films are controlled from 2.0 to 2.5 by varying the flow ratio of SiH4 and NH3. The properties of the SiNx (n = 2.0) are investigated, and it is found that, 1) the 16-BHF etching rate of the Cat-CVD SiNx film is only 23 A/min, and the film shows excellent moisture resistance, 2) the Cat-CVD SiNx film shows good insulating properties, and the breakdown electric field is higher than 9 MV/cm and the interface state density is 5.6x 1011 cm2eV-1, 3) the step coverage of the film is very conformal.

Improving the Structural and Electrical Properties of Epitaxial CaF2 on Si By Rapid Thermal Anneaing

1985 ◽  
Vol 53 ◽  
Author(s):  
Julia M. Phillips ◽  
Mary L. Manger ◽  
Loren Pfeiffer ◽  
D. C. Joy ◽  
T. P. Smith ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Crack Formation ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Bulk Single Crystal ◽  
Electrical Characteristics ◽  
Structural And Electrical Properties ◽  
Annealing Procedure

ABSTRACTRapid thermal annealing (RTA) has been shown to be a useful technique for improving the epitaxial quality of CaF2 films grown on Si(100) by molecular beam epitaxy. We have modified the annealing procedure to prevent crack formation, while still maintaining high film quality. Our work also shows RTA to be useful for improving the crystalline quality, chemical stability, and electrical characteristics of CaF2 films grown on Si(111). After RTA, the crystallinity of CaF2 films on Si(111), as measured by electron channeling, is indistinguishable from bulk single crystal CaF2, and the interface state density is reduced by nearly two orders of magnitude from that found in as-grown films.

Electrical Characterization of the Oxide-Silicon Carbide Interface by MOS Conductance Technique

1985 ◽  
Vol 54 ◽  
Author(s):  
M. I. Chaudhry ◽  
W. B. Berry
Keyword(s):  
Electrical Characterization ◽  
Surface States ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Conductance Data ◽  
Capacitance Voltage ◽  
Conductance Technique ◽  
Electronic Surface

ABSTRACTThe electrical properties of the SiO2/SiC interface were studied using the conductance vs voltage (G-V) data for the metal-oxide-SiC (MOS) structure. It was found that the dry oxide contained too mjch charge either at the oxide-SiC interface or within the oxide films to obtain useful data. On the other hand the wet oxide invariably resulted in better capacitance and conductance data. The capacitance-voltage data showed that the SiC surface exhibited accumulation, depletion or inversion when the appropriate gate bias was applied. The conductance-voltage data indicate electronic surface states at the oxide-SiC interface. From this conductance data the interface state density has been estimated.

Effect of GaAs Surface Stoichiometry on The Interface of As-Grown Epitaxial ZnSe/Epitaxial GaAs Heterostructures

1989 ◽  
Vol 161 ◽  
Author(s):  
J. Qiu ◽  
R.L. Gunshor ◽  
M. Kobayashi ◽  
D.R. Menke ◽  
Q.-D. Qian ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Gaas Surface ◽  
Dramatic Reduction ◽  
Epitaxial Gaas ◽  
Capacitance Voltage ◽  
State Densities

ABSTRACTIn the study reported here, the GaAs surface stoichiometry was systematically varied prior to the nucleation of ZnSe to form epitaxial ZnSe/epitaxial GaAs interfaces. The structures were grown by molecular beam epitaxy and evaluated by several techniques including capacitance-voltage (C-V) measurements. A dramatic reduction of interface state density occurred when the GaAs epilayer was made As deficient. The resulting interface state densities of as-grown structures are comparable to values obtained with (Al,Ga)As/GaAs interfaces.

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