Characterization of carbon-boronnitride-coatings prepared with chemical vapor deposition by auger electron spectroscopy, electron probe microanalysis and secondary ion mass spectrometry

2002 ◽  
Vol 406 (1-2) ◽  
pp. 98-102 ◽  
Author(s):  
K. Gammer ◽  
T. Kolber ◽  
K. Piplits ◽  
K. Nowikow ◽  
X. Tang ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Electron Probe ◽  
Auger Electron ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Secondary Ion

Te Induced AlAs/GaAs Superlattice Mixing

1988 ◽  
Vol 126 ◽  
Author(s):  
P. Mel ◽  
S. A. Schwarz ◽  
T. Venkatesan ◽  
C. L. Schwartz ◽  
E. Colas
Keyword(s):  
Mass Spectrometry ◽  
Activation Energy ◽  
Diffusion Coefficient ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Temperature Range ◽  
The Relationship ◽  
Secondary Ion

ABSTRACTTe enhanced mixing of AlAs/GaAs superlattice has been observed by secondary ion mass spectrometry. The superlattice sample was grown by organometallic chemical vapor deposition and doped with Te at concentrations of 2×1017 to 5×1018 cm−.3 In the temperature range from 700 to 1000 C, a single activation energy for the Al diffusion of 2.9 eV was observed. Furthermore, it has been found that the relationship between the Al diffusion coefficient and Te concentration is linear. Comparisons have been made between Si and Te induced superlattice mixing.

Stranski–Krastanov Growth of Tungsten during Chemical Vapor Deposition Revealed by Micro-Auger Electron Spectroscopy

2004 ◽  
Vol 43 (10) ◽  
pp. 6974-6977 ◽  
Author(s):  
Suguru Noda ◽  
Takeshi Tsumura ◽  
Jota Fukuhara ◽  
Takashi Yoda ◽  
Hiroshi Komiyama ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Auger Electron Spectroscopy ◽  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor

Chromium implantation in silica glass

1996 ◽  
Vol 11 (1) ◽  
pp. 229-235 ◽  
Author(s):  
E. Cattaruzza ◽  
R. Bertoncello ◽  
F. Trivillin ◽  
P. Mazzoldi ◽  
G. Battaglin ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Photoelectron Spectroscopy ◽  
Silica Glass ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
X Ray ◽  
Chromium Silicide ◽  
Secondary Ion

Silica glass was implanted with chromium at the energy of 35 and 160 keV and at fluences varying from 1 × 1016 to 11 × 1016 ions cm−2. In a set of chromium-implanted samples significant amounts of carbon were detected. Samples were characterized by x-ray photoelectron spectroscopy, x-ray-excited Auger electron spectroscopy, secondary ion mass spectrometry, and Rutherford backscattering spectrometry. Chromium silicide and chromium oxide compounds were observed; the presence of carbon in the implanted layers induces the further formation of chromium carbide species. Thermodynamic considerations applied to the investigated systems supply indications in agreement with the experimental evidences.

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