The Morphological Stability of Strained Epitaxial Layers
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AbstractThe morphological stability of strained-layer thin films is analyzed using classical nucleation theory. For the case where strain relaxation occurs by formation of coherent islands, the model predicts that the critical thickness for transition from two-dimensional (2D) to three dimensional (3D) growth depends inversely on the square of the misfit. The predicted dependence of critical thickness on misfit is in agreement with recent experimental studies on the heteropitaxy of III-V compounds.
1971 ◽
Vol 29
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pp. 216-217
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Keyword(s):
2014 ◽
Vol 118
(29)
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pp. 15649-15655
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1995 ◽
Vol 11
(4)
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pp. 371-394
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