Generation and Suppression of Stacking Faults in Gap Layers Grown on Si(100) Substrates by Molecular Beam Epitaxy and Migration Enhanced Epitaxy

1996 ◽  
Vol 441 ◽  
Author(s):  
Y. Takagi ◽  
H. Yonezu ◽  
K. Samonji ◽  
T. Tsuji ◽  
N. Ohshima
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Stacking Faults ◽  
Misfit Dislocations ◽  
Generation Process ◽  
Si Substrates ◽  
Transmission Electron ◽  
Migration Enhanced Epitaxy ◽  
Regular Network ◽  
And Migration

AbstractWe have investigated the generation process of crystalline defects in GaP layers grown on Si substrates (GaP/Si) by molecular beam epitaxy (MBE) and migration enhanced epitaxy (MEE). Transmission electron microscopy observations revealed that a regular network of misfit dislocations was generated in GaP/Si by MEE. On the other hand, threading dislocations as well as interfacial misfit dislocations were observed in GaP/Si by MBE. Moreover, stacking faults were generated in high density at the hetero-interface of GaP/Si by MBE. The density of stacking faults was drastically reduced by MEE.

Growth of 3C-(Si1-xC1-y)Gex+y Layers on 4H-SiC by Molecular Beam Epitaxy

2005 ◽  
Vol 483-485 ◽  
pp. 173-176 ◽  
Author(s):  
Petia Weih ◽  
Henry Romanus ◽  
Thomas Stauden ◽  
Lothar Spieß ◽  
Oliver Ambacher ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Solid Solutions ◽  
Molecular Beam ◽  
Optimal Growth ◽  
Growth Conditions ◽  
Transmission Electron ◽  
Migration Enhanced Epitaxy ◽  
Different Temperatures ◽  
And Migration ◽  
Suitable Technique

In the present work cubic 3C-(Si1-xC1-y)Gex+y solid solutions were grown at different^temperatures by molecular beam epitaxy on on-axis 4H-SiC (0001) substrates. Two different growth methods are compared in order to explore the optimal growth conditions for the incorporation of Ge into the SiC lattice during the low temperature epitaxy. For this reason simultaneous growth and migration enhanced epitaxy were used. The chemical composition of the grown layers were analyzed by energy dispersive x-ray methods during transmission electron microscopy investigations. It was found that the migration enhanced epitaxy is a more suitable technique for the formation of high quality (Si1-xC1-y)Gex+y solid solutions. Additionally, polytypes transition from 4H-SiC to 3C-SiC occurs during the growth independent of the applied growth technique.

Fabrication of AlAs/Al/AlAs heterostructures by molecular beam epitaxy and migration enhanced epitaxy

1991 ◽  
Vol 111 (1-4) ◽  
pp. 221-227 ◽  
Author(s):  
Takafumi Yao ◽  
Hiroaki Nakahara ◽  
Hirofumi Matuhata ◽  
Yasumasa Okada
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Migration Enhanced Epitaxy ◽  
And Migration

Dissociation of Misfit Dislocations in GeSi/{111}Si Interfaces

1993 ◽  
Vol 319 ◽  
Author(s):  
Frank Ernst
Keyword(s):  
Lattice Mismatch ◽  
Stacking Faults ◽  
Chemical Vapor ◽  
Interfacial Area ◽  
Dark Field ◽  
Dislocation Network ◽  
Misfit Dislocations ◽  
Si Substrates ◽  
Weak Beam ◽  
Transmission Electron

AbstractThe accommodation of lattice mismatch is studied in Ge0.15Si0.85 layers grown epitaxially on {111}-oriented Si substrates by chemical vapor deposition (CVD) at 1100°C. Weak beam dark field microscopy reveals a regular misfit dislocation network, which resembles the honeycomb network of edge-type dislocations anticipated by the O-lattice theory. In contrast to the latter, however, the real network exhibits extended nodes where the misfit dislocations dissociate into misfit partial dislocations. Between the partials, high resolution transmission electron microscopy (HRTEM) reveals intrinsic and extrinsic stacking faults. Owing to the presence of these stacking faults, three different atomistic structures of the GeSi/Si interface coexist and compete for the interfacial area according to their energy. The observed configuration is shown to minimize the total energy of the interface.

New Approach to Growth of High-Quality GaAs Layers on Si Substrates

1988 ◽  
Vol 116 ◽  
Author(s):  
Jukka Varrio ◽  
Arto Salokatve ◽  
Harry Asonen ◽  
Minna Hovinen ◽  
Markus Pessa ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Layer Growth ◽  
Rutherford Backscattering ◽  
X Ray Diffraction ◽  
New Approach ◽  
Si Substrates ◽  
Surface Steps ◽  
Transmission Electron ◽  
Migration Enhanced Epitaxy ◽  
And Migration

AbstractGaAs layers were grown on Si (001) substrates by molecular beam epitaxy (MBE) and migration enhanced epitaxy (MEE). They were examined by transmission electron microscopy, doublecrystal X-ray diffraction and Rutherford backscattering/channeling technique. Initial layer growth in both MEE and MBE was governed by three-dimensional nucleation but a stronger tendency for GaAs islands to align along the surface steps of Si was observed in the case of MEE. There was no measurable tilt between the (001) planes of GaAs and Si if growth was initiated by MEE at low temperature, prior to further growth by MBE at higher temperatures. On the contrary, the tilt angle was 0.34• when the entire structure was prepared by conventional two-step MBE. Rutherford backscattering measurements indicated a significant reduction in the density of defects throughout MEE/MBE GaAs in comparison with MBE GaAs.

Defect engineering in AlGaN-based UV optoelectronic heterostructures grown on c-Al2O3 by plasma-assisted molecular beam epitaxy

2015 ◽  
Vol 1741 ◽  
Author(s):  
Sergei Rouvimov ◽  
Valentin N. Jmerik ◽  
Dmitrii V. Nechaev ◽  
Valentin V. Ratnikov ◽  
Alexey A. Toropov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Stimulated Emission ◽  
Defect Engineering ◽  
Transmission Electron ◽  
Migration Enhanced Epitaxy ◽  
Optimum Approach ◽  
Dislocations Density ◽  
Aln Buffer

ABSTRACTAlGaN-based SQW heterostructures grown by plasma-assisted molecular beam epitaxy on c-Al2O3 substrates have been studied with high resolution transmission electron microscopy (HR TEM), photoluminescence spectroscopy and x-ray diffraction. The high-temperature (780°C) synthesis of the AlN buffer layer nucleated on c-Al2O3 by a migration enhanced epitaxy and including several ultra-thin GaN interlayers grown under moderate N-rich conditions was shown to be the optimum approach for lowering the threading dislocations density down to 108-109 cm-2. HR TEM study has confirmed the fine structure of single quantum wells (SQW) formed by a sub-monolayer digital alloying technique and revealed different kinds of compositional inhomogeneities in the AlxGa1-xN barrier layers of the heterostructures, including the formation of Al-rich barriers induced by the temperature-modulated epitaxy and the spontaneous compositional disordering along the growth axis for x=0.6-0.7. The influence of these phenomena on the parameters of the mid-UV stimulated emission observed in the SQW structures has been studied as well.

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