A Study of ITO Thin Films Fabricated by DC Magnetron Sputtering Method

2013 ◽  
Vol 834-836 ◽  
pp. 79-89
Author(s):  
Xian Ming Yang ◽  
Lin Liu ◽  
Juan Xiu Lin
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Pressure Work ◽  
Atomic Force ◽  
Work Pressure ◽  
Sputtering Power ◽  
Ito Thin Films ◽  
Test Table

With high optical transparency and electrical conductivity, ITO thin films were fabricated by DC magnetron sputtering. Based on orthogonal test table L18 (35), the effects of process parameters included water partial pressure, work pressure, substrate temperature, oxygen flow rate and sputtering power, on the optoelectronics properties of ITO thin films were investigated in detail(systematically). Calibration of sheet resistance transmittance, atomic force microscope, and X-ray diffraction were employed to characterize the ITO films.

Optimization in Synthesis of ITO Thin Films Fabricated by DC Magnetron Sputtering Method

2014 ◽  
Vol 575 ◽  
pp. 254-263 ◽  
Author(s):  
Hua Jing Zheng ◽  
Chi Zhang ◽  
Zheng Ruan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Magnetron Sputtering ◽  
Water Pressure ◽  
Dc Magnetron Sputtering ◽  
Sputtering Power ◽  
Conductive Substrate ◽  
Ito Thin Films ◽  
Sputtering Pressure

With high optical transparency and electrical conductivity, ITO thin films were fabricated by DC magnetron sputtering. Series of research and exploration are presented on DC magnetron sputtering method for preparing ITO thin film. With substrate temperature of 60 °C, sputtering power of 200W,sputtering pressure of 1 mTorr, water pressure of 2×10-5Torr, the sheet resistance of the ITO conductive substrate is 53 Ω/□ and the transmittance is 83%.

INVESTIGATION OF THE PROPERTIES OF SILVER THIN FILMS DEPOSITED BY DC MAGNETRON SPUTTERING

2016 ◽  
Vol 24 (04) ◽  
pp. 1750053 ◽  
Author(s):  
LINWEN WANG ◽  
LING LI ◽  
WEI-DONG CHEN
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Sheet Resistance ◽  
Optical Transmittance ◽  
Localized Surface Plasmon ◽  
Dc Magnetron Sputtering ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sputtering Power

In this paper, we studied the surface morphology of silver (Ag) thin films deposited on glass substrate by using the DC magnetron sputtering with various power conditions at room temperature. The surface morphology, the optical and electrical properties were measured by AFM (Atomic Force Microscopy), UV–Vis Spectrophotometer (Lambda 950), and the four-probe method (RTS-9, Four Probes Technology). The effect of the sputtering power on the root-mean-square (RMS) surface roughness of Ag thin films was analyzed. The experiment results showed that the RMS value was lowest in the range from 60[Formula: see text]W to 80[Formula: see text]W. At the same time, the effect of the thickness on optical transmittance and sheet resistance was also investigated. We found the rough surface was prejudiced to inducing sheet resistance and enhancing the optical transmittance when the thickness of Ag thin films was thin. In addition, the excitation of the localized surface plasmon resonance (LSPR) was due to Ag nanoparticles (NPs) based on the analysis of the FDTD (finite-difference time-domain) simulation.

Transparent Conductive Cu-In-O Thin Films Deposited by Reactive DC Magnetron Sputtering with Different Targets

2011 ◽  
Vol 239-242 ◽  
pp. 2752-2755
Author(s):  
Fan Ye ◽  
Xing Min Cai ◽  
Fu Ping Dai ◽  
Dong Ping Zhang ◽  
Ping Fan ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Optical Band Gap ◽  
Diffraction Peak ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Flow Rates ◽  
X Ray ◽  
Equal Distance ◽  
Transmittance Curve

Transparent conductive Cu-In-O thin films were deposited by reactive DC magnetron sputtering. Two types of targets were used. The first was In target covered with a fan-shaped Cu plate of the same radius and the second was Cu target on which six In grains of 1.5mm was placed with equal distance between each other. The samples were characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/VIS spectrophotometer, four-probe measurement etc. SEM shows that the surfaces of all the samples are very smooth. EDX shows that the samples contain Cu, In as well as O, and different targets result in different atomic ratios of Cu to In. A diffraction peak related to rhombohedra-centered In2O3(012) is observed in the XRD spectra of all the samples. For both the two targets, the transmittance decreases with the increase of O2flow rates. The direct optical band gap of all the samples is also estimated according to the transmittance curve. For both the two targets, different O2flow rates result in different sheet resistances and conductivities. The target of Cu on In shows more controllability in the composition and properties of Cu-In-O films.

Structural, Morphological and Adhesion Properties of Cofeb Thin Films Deposited by DC Magnetron Sputtering

2013 ◽  
Vol 802 ◽  
pp. 47-52
Author(s):  
Chuleerat Ibuki ◽  
Rachasak Sakdanuphab
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Magnetron Sputtering ◽  
Crystalline Structure ◽  
Glass Substrate ◽  
Intrinsic Stress ◽  
Dc Magnetron Sputtering ◽  
Adhesion Properties ◽  
Sputtering Power

In this work the effects of amorphous (glass) and crystalline (Si) substrates on the structural, morphological and adhesion properties of CoFeB thin film deposited by DC Magnetron sputtering were investigated. It was found that the structure of a substrate affects to crystal formation, surface morphology and adhesion of CoFeB thin films. The X-Ray diffraction patterns reveal that as-deposited CoFeB thin film at low sputtering power was amorphous and would become crystal when the power increased. The increase in crystalline structure of CoFeB thin film is attributed to the crystalline substrate and the increase of kinetic energy of sputtering atoms. Atomic Force Microscopy images of CoFeB thin film clearly show that the roughness, grain size, and uniformity correlate to the sputtering power and the structure of substrate. The CoFeB thin film on glass substrate shows a smooth surface and a small grain size whereas the CoFeB thin film on Si substrate shows a rough surface and a slightly increases of grain size. Sticky Tape Test on CoFeB thin film deposited on glass substrate indicates the adhesion failure with a high sputtering power. The results suggest that the crystalline structure of substrate affects to the atomic bonding and the sputtering power affects to intrinsic stress of CoFeB thin film.

Studies of Hydroxyapatite Thin Coating Produced by Dual RF Magnetron Sputtering for Biomedical Applications

2011 ◽  
Vol 493-494 ◽  
pp. 473-476
Author(s):  
E.O. Lopez ◽  
F.F. Borghi ◽  
Alexandre Mello ◽  
J. Gomes ◽  
Antonella M. Rossi
Keyword(s):  
Magnetron Sputtering ◽  
Deposition Time ◽  
Grazing Incidence ◽  
Rf Magnetron Sputtering ◽  
Nanocrystalline Phase ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sputtering Power

In this present work, we characterize HAp thin films deposited by dual magnetron sputtering device DMS on silicon (Si/HAp). The sputtering RF power was varied from 90 watts to 120 watts and deposition times from 60 to 180 minutes. The argon and oxygen pressure were fixed at 5.0 mTorr and 1.0 mTorr, respectively. Grazing incidence X-ray diffraction (GIXRD) from synchrotron radiation, infrared spectroscopy (FTIR) and atomic force microscopy (AFM) were used for the structural characterization. At lower deposition times, a crystalline phase with preferential orientation along apatite (002) and a disordered nanocrystalline phase were identified. The coating crystallinity was improved with the increase of the deposition time besides the sputtering power.

Stress of Platinum Thin Films Deposited by Dc Magnetron Sputtering Using Argon/Oxygen Gas Mixture

1996 ◽  
Vol 441 ◽  
Author(s):  
Min Hong Kim ◽  
Tae-Soon Park ◽  
Dong-Su Lee ◽  
Yong Eui Lee ◽  
Dong-Yeon Park ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Resistivity ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Oxygen Incorporation ◽  
Oxygen Fraction ◽  
Oxygen Gas ◽  
Pt Films ◽  
Excessive Oxygen

AbstractPt thin films were deposited by a DC magnetron sputtering with Ar/O2 gas mixtures. Due to the oxygen incorporation into the Pt films, deposition rate and resistivity of as-deposited Pt thin films increased with oxygen fraction in the sputtering gas. No peaks from crystalline Pt oxides were observed by x-ray diffraction (XRD) and excessive oxygen incorporation into Pt lead to an amorphous Pt oxide formation. More oxygen could be incorporated in the Pt thin films deposited at lower temperatures and at higher total pressures. Incorporated oxygen was completely removed after an annealing at 800 °C for an hour in air ambient, as the resistivity of the Pt thin films recovered their bulk resistivity values. Tensile stress of the Pt films decreased with oxygen incorporation, and approached a saturation level at high resistivity of the films, presumably due to the formation of amorphous Pt oxides.

The Study of Al-N Codoped ZnO Thin Films Prepared by DC Magnetron Sputtering

2015 ◽  
Vol 754-755 ◽  
pp. 591-594
Author(s):  
Haslinda Abdul Hamid ◽  
M.N. Abdul Hadi
Keyword(s):  
Magnetron Sputtering ◽  
Structural Investigation ◽  
Annealing Treatment ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Oxygen Gas ◽  
Film Roughness

The codoped ZnO thin film were deposited by DC magnetron sputtering on silicon (111) followed by annealing treatment at 200 °C and 600 °C for 1 hour in nitrogen and oxygen gas mixture. Structural investigation was carried out by scanning electron microscopy (SEM), atomic force microscopy and x-ray diffraction (XRD). Film roughness and grain shape were found to be correlated with the annealing temperatures.

Sign in / Sign up

Export Citation Format

Share Document