Optical Waveguiding (Pb, La)(Zr,Ti)O3 Thin Films Prepared by Pulsed Laser Deposition

1996 ◽  
Vol 444 ◽  
Author(s):  
S. B. Xiong ◽  
Z. G. Liu ◽  
X. Y. Chen ◽  
X. L. Guo ◽  
T. Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Si Substrates ◽  
Glass Substrates ◽  
Average Transmittance ◽  
Optical Waveguiding

AbstractThe ferroelectric (Pb, La) (Zr,Ti)03 (PLZT(9.4/65/35)) optical waveguiding thin films have been prepared on SiO2 coated Si and on silica glass substrates by pulsed laser deposition. X-ray θ–2θ scans revealed that the films are single-phase pseudo-cubic perovskite. The surface chemical composition of the as grown films were determined by XPS. The ferroelectric properties of the films as grown on Pt/Ti coated silicon were demonstrated by using a modified Sawyer-Tower circuit, and the optical waveguiding properties of the films were characterized by using a rutile prism coupling method. The as grown films have an average transmittance of 80% in the wavelength range of 400˜2000nm and a refractive index of 2.2 at 632.8mn close to the bulk PLZT. The distinct m-lines of the guided TM and TE modes of the films as grown on SiO2 coated Si substrates have been observed.

Ferroelectric Properties and Microstructures of Bi4-xDyxTi3O12 Thin Films

2014 ◽  
Vol 633 ◽  
pp. 378-381
Author(s):  
Bei Li ◽  
X.B. Liu ◽  
M. Chen ◽  
X.A. Mei
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Layered Structure ◽  
Remanent Polarization ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Si Substrates

Dy-doped Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique, and the structures and electrical properties of the films were investigated. XRD results indicated that all of Bi4-xDyxTi3O12 films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the Bi4-xDyxTi3O12 Film with x=0.75 were 25μC/cm2 and 85KV/cm , respectively.

Electrical Characterization and Microstructures of Bi4-x Scx Ti3O12 Thin Films Grown by Pulsed Laser Deposition Technique

2013 ◽  
Vol 833 ◽  
pp. 37-40
Author(s):  
Fang Tian ◽  
X.A. Mei ◽  
M. Chen ◽  
C.Q. Huang
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Electrical Characterization ◽  
Laser Deposition ◽  
Layered Perovskite ◽  
Deposition Technique ◽  
Random Orientation ◽  
Si Substrates

Sc-doped bismuth titanate (Bi4-xScxTi3O12: BST) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. The experimental results indicated that Sc doping into BIT result in a remarkable improvement in ferroelectric properties. The Pr and the Ec values of the BST film with x=0.75 were 25 μC/cm2 and 65 kV/cm, respectively.

Structures and Properties of BiFeO3 Thin Films on Pt(111)/Ti/SiO2/Si Substrates Prepared by Pulsed-Laser Deposition under Various Oxygen Partial Pressures

2013 ◽  
Vol 760-762 ◽  
pp. 714-718 ◽  
Author(s):  
Mei Lin Yi ◽  
Chuan Bin Wang ◽  
Qiang Shen ◽  
Lian Meng Zhang
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Pulsed Laser Deposition ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Si Substrates ◽  
Partial Pressures ◽  
Structures And Properties ◽  
High Degree

Ferroelectric BiFeO3(BFO) thin films were prepared on Pt (111)/Ti/SiO2/Si substrates by pulsed-laser deposition under various oxygen partial pressures (PO2). The effects ofPO2on the phase, orientation, surface morphology, and ferroelectric properties of the films were investigated, particularly in regard to relationships between structure and properties. It was found that the crystallographic orientation and surface morphology of the BFO thin films strongly depended onPO2. Films prepared atPO2=10 Pa had a high degree of (111) orientation and densely packed grains. A maximum of twice the remanent polarization for the BFO thin film was 68 μC/cm2.

Epitaxial growth and ferroelectric properties of SrBi2Nb2O9(115) thin films grown by pulsed-laser deposition on epitaxial Pt(111) electrode

2003 ◽  
Vol 83 (26) ◽  
pp. 5500-5502 ◽  
Author(s):  
J.-R. Duclère ◽  
M. Guilloux-Viry ◽  
V. Bouquet ◽  
A. Perrin ◽  
E. Cattan ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition

Optical waveguiding properties of lead titanate thin films grown on quartz by pulsed-laser deposition

2003 ◽  
Vol 24 (3) ◽  
pp. 465-470 ◽  
Author(s):  
A Essahlaoui ◽  
A Roemer ◽  
A Boudrioua ◽  
E Millon ◽  
J.C Loulergue
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Lead Titanate ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Optical Waveguiding

Pulsed laser deposition of oriented V2O5 thin films

2000 ◽  
Vol 15 (10) ◽  
pp. 2249-2265 ◽  
Author(s):  
Jeanne M. McGraw ◽  
John D. Perkins ◽  
Falah Hasoon ◽  
Philip A. Parilla ◽  
Chollada Warmsingh ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Glass Substrates ◽  
Wide Range ◽  
Phase Pure ◽  
Amorphous Quartz ◽  
Quartz Substrates

We have found that by varying only the substrate temperature and oxygen pressure five different crystallographic orientations of V2O5 thin films can be grown, ranging from amorphous to highly textured crystalline. Dense, phase-pure V2O5 thin films were grown on SnO2/glass substrates and amorphous quartz substrates by pulsed laser deposition over a wide range of temperatures and oxygen pressures. The films' microstructure, crystallinity, and texturing were characterized by electron microscopy, x-ray diffraction, and Raman spectroscopy. Temperature and oxygen pressure appeared to play more significant roles in the resulting crystallographic texture than did the choice of substrate. A growth map summarizes the results and delineates the temperature and O2 pressure window for growing dense, uniform, phase-pure V2O5 films.

Post-Processing of Pulsed Laser-Deposited Pzt Thin Films

1991 ◽  
Vol 243 ◽  
Author(s):  
C. K. Chiang ◽  
W. Wong-Ng ◽  
L. P. Cook ◽  
P. K. Schenck ◽  
H. M. Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Material ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Linear Shrinkage ◽  
Laser Deposition ◽  
Amorphous Films ◽  
Pzt Thin Films ◽  
Si Substrates ◽  
Pzt Thin Film

AbstractPZT thin films were prepared by pulsed laser deposition on unheated Ptcoated Si substrates. As deposited, the films were amorphous. Films crystallized at 550 - 600 °C to produce predominantly crystalline ferroelectric PZT. Crystallization of the amorphous material was accompanied by a linear shrinkage of ∼2 %, as manifested in development of cracks in the film. Spacing, width and morphology of larger cracks followed a regular progression with decreasing film thickness. For film thicknesses less than 500 runm, much of the shrinkage was taken up by small, closely-spaced cracks of local extent. Implications for measurement of PZT thin film ferroelectric properties and processing are discussed.

Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 123-125 ◽  
pp. 375-378 ◽  
Author(s):  
Ram Prakash ◽  
Shalendra Kumar ◽  
Chan Gyu Lee ◽  
S.K. Sharma ◽  
Marcelo Knobel ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Fe Doping ◽  
Full Width ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

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