Determination of Optimal Rapid Thermal Annealing Exposure Time and Pulse Rising Rate for Minimum Impurity Redistribution

1985 ◽  
Vol 45 ◽  
Author(s):  
Carlos A. Paz de Araujo ◽  
Tang Ting-Ao
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Exposure Time ◽  
First Principles ◽  
Heat Pulse ◽  
High Dose ◽  
Simple Relationship ◽  
Sims Analysis ◽  
Good Agreement

ABSTRACTA simple relationship for rapid thermal annealing exposure time for the case of annealing of boron and arsenic high dose shallow implants is found from first principles. The percentage of redistribution is found to be intrinsically dependent on exposure time and rate of temperature rise in the heat pulse. An upper bound of pulse rising rate for a given percentage tolerance in redistribution is also found. Extensive SIMS analysis shows very good agreement of these formulae with experimental data.

Ajustement par recuits rapides RTA (rapid thermal annealing) des contraintes dans des couches minces de tungstène utilisées comme absorbant pour des masques à rayons X

1991 ◽  
Vol 69 (3-4) ◽  
pp. 451-455 ◽  
Author(s):  
H. Lafontaine ◽  
J. F. Currie ◽  
S. Boily ◽  
M. Chaker ◽  
H. Pépin
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Rf Power ◽  
X Ray ◽  
Stress Changes ◽  
Different Temperatures ◽  
Absorbing Layer ◽  
Good Agreement ◽  
Sputtering System

Tungsten thin films are deposited with a triode sputtering system in order to obtain an absorbing layer for X-ray masks. The mechanical stress is studied as a function of different pressure and RF power conditions during deposition. Rapid thermal annealing at different temperatures and durations is performed in order to produce films under low compressive stress. We observe that the stress changes occur over the time scale of seconds at the annealing temperature and that the corresponding activation energies are low (60 meV). Grain growth in a preferred orientation explains the observed changes in stress. The magnitude in the change of stress is in good agreement with a model proposed by Hoffman et al. relating the stress to grain size and grain boundary dimensions. [Journal translation]

Supersaturated P-Type Polycrystaline Films Produced by Rapid Thermal Annealing of High Dose Boron Ion Implants for Interconnects and Shallow Junction Diffusion Sources

1990 ◽  
Vol 182 ◽  
Author(s):  
B. Raicu ◽  
M.I. Current ◽  
W.A. Keenan ◽  
D. Mordo ◽  
R. Brennan ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Thermal Annealing ◽  
Cross Section ◽  
Rapid Thermal Annealing ◽  
Single Crystal Silicon ◽  
High Dose ◽  
Crystal Silicon ◽  
Polysilicon Films ◽  
P Type

AbstractHighly conductive p+-polysilicon films were fabricated over Si(100) and SiO2 surfaces using high-dose ion implantation and rapid thermal annealing. Resistivities close to that of single crystal silicon were achieved. These films were characterized by a variety of electrical and optical techniques as well as SIMS and cross-section TEM.

Automatic Determination of Tight-Binding Parameters in Bulk Systems

2013 ◽  
Vol 1523 ◽  
Author(s):  
Yasuaki Ohtani ◽  
Takeo Fujiwara ◽  
Shinya Nishino ◽  
Takashi Suzuki ◽  
Susumu Yamamoto ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
First Principles ◽  
Tight Binding ◽  
Crystalline Solid ◽  
Binding Parameters ◽  
Automatic Determination ◽  
Dynamics Calculation ◽  
Good Set ◽  
Good Agreement

ABSTRACTWe have studied a procedure to determine Tight-Binding (TB) parameters automatically, by which the band structure of the crystalline solid can be reproduced so as to be good agreement with that of first-principles molecular dynamics calculation. According to this procedure, we determine TB parameter sets for silicon and diamond accurately, and a fairly good set for their compound SiC.

scholarly journals Outdiffusion of Be during rapid thermal annealing of high‐dose Be‐implanted GaAs

1990 ◽  
Vol 67 (10) ◽  
pp. 6589-6591 ◽  
Author(s):  
H. Baratte ◽  
D. K. Sadana ◽  
J. P. de Souza ◽  
P. E. Hallali ◽  
R. G. Schad ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Dose

Defect States Induced by Rapid Thermal Annealing in Virgin or Implanted Czochralski-Grown Silicon

1986 ◽  
Vol 74 ◽  
Author(s):  
M. Remram ◽  
D. Barbier ◽  
J.-F. Joly ◽  
A. Laugier
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Schottky Contacts ◽  
High Dose ◽  
Hole Trap ◽  
Defect States ◽  
Incoherent Light ◽  
Boron Doped ◽  
Doped Silicon ◽  
State Generation

AbstractDefect state generation in either virgin or implanted CZ silicon has been investigated by means of capacitance transient spectroscopy (DLTS) after rapid thermal annealing (RTA), using an incoherent light furnace and variable cycle parameters. No electron traps were dectected with gold Schottky contacts made on virgin phosporous-doped silicon annealed for 5 sec at any temperature. On the otherhand 3 hole trap levels H1(0.45 eV), H2(0.29 eV) and H3(0.31 eV) have been observed in boron-doped silicon (Al Schottky contacts) after a 5 sec temperature plateau between 850 and 1050°C. Peak concentrations ranging from 1013 to 1014 cm−3 were measured after annealing at 1000°C for the three hole traps. By increasing the plateau duration up to 20 sec hole traps were no longer detected in boron-doped silicon. Furthermore in As+ or PF5+-implanted and rapidly annealed N+/P junctions the H3(0.31 eV) level was replaced by another hole trap H4(0.4 eV), which appeared within specific conditions (RTA parameters, implant dose and species). Moreover an electron trap E(0.55 eV) was only detected in the high dose As+-implanted junctions after annealing for 10 sec at 1100°C. The probable metallic origin of the observed defect states and the RTA parameter dependence of the hole trap concentrations suggest gettering and trapping in interstitial sites as possible mechanisms involved in RTA.

Rapid thermal annealing of high dose arsenic-implanted silicon

1990 ◽  
Vol 51 (1) ◽  
pp. 53-59 ◽  
Author(s):  
R. K�gler ◽  
E. Wieser ◽  
G. Otto ◽  
P. Knothe
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Dose

Germanium Implantation into Silicon: An Alternate Pre-Amorphization/Rapid Thermal Annealing Procedure for Shallow Junction Technology

1983 ◽  
Vol 23 ◽  
Author(s):  
D.K. Sadana ◽  
E. Myers ◽  
J. Liu ◽  
T. Finstad ◽  
G.A. Rozgonyi
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Surface Region ◽  
Amorphous Layer ◽  
High Dose ◽  
Dislocation Loops ◽  
Cross Sectional ◽  
Defect Clusters ◽  
Ion Damage ◽  
Free Material

ABSTRACTGermanium implantation into Si was conducted to pre-amorphize the-si surface layer prior to a shallow/high dose (42 keV, 2 × 1015 cm−2) BF2 implant. Cross-sectional transmission electron microscopy showed that rapid thermal annealing (RTA) of the amorphous layer (without BF2 ) leaves defect-free material in the implanted region. Only a discrete layer of small (∼300Å) dislocation loops due to straggling ion damage was found to be present at a depth corresponding to the amorphous/crystalline interface. RTA of the amorphous layer with the BF2 creatpd a high density of uniformly. distributed fine defect clusters (∼50Å) in the surface region (0–500Å) in addition to the straggling ion damage. Boron and F profiles obtained by secondary ion mass spectrometry from the unannealed and rapid thermally annealed samples showed the presence of high concentrations of these impurities in the surface region where the fine defect clusters were observed. A comparison of the RTA behavior of the pre-amorphized surface layers (with or without BF2 ) produced by Ge and self-implantation is presented.

scholarly journals Semi-Experimental Determination of the Linear Clamped Electro-Optical Coefficients of Polar Crystals from Vibrational Spectroscopic Data

Crystals ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 52
Author(s):  
Eric Bouhari ◽  
Ballo Mohamadou ◽  
Patrice Bourson
Keyword(s):  
First Principles ◽  
Soft Mode ◽  
Dielectric Susceptibility ◽  
First Principles Calculations ◽  
Mode Behavior ◽  
Direct Measurements ◽  
Semi Empirical ◽  
General Method ◽  
Good Agreement

The present work highlights a new general method devoted to computations of the clamped linear electro-optical coefficients from the measured fundamental vibrational frequencies and the nonlinear dielectric susceptibility constants. The calculations are based on the formula analog to that of the Lyddane–Sachs–Teller relation, which is systematically used for the calculations of the clamped linear electro-optical coefficient of oxide ferroelectric crystals such as LiNbO3, LiTaO3, BaTiO3, PbTiO3, and KNbO3. The computed electro-optical coefficients are in good agreement with those obtained from direct measurements and the first-principles calculations or other semi-empirical models. In addition, the famous r51 or r42 coefficients of the tetragonal BaTiO3, PbTiO3, and KNbO3 crystals are finally calculated with high accuracy and discussed in connection with the soft mode behavior.

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