High-quality Ge-rich SiGe thin films epitaxially grown on Si at low temperature by a two-step approach

CrystEngComm ◽  
2019 ◽  
Vol 21 (43) ◽  
pp. 6623-6629
Author(s):  
Ke Tao ◽  
Jin Wang ◽  
Shuai Jiang ◽  
Rui Jia ◽  
Zhi Jin ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Seed Layer ◽  
Si Substrate ◽  
High Quality ◽  
Bulk Layer ◽  
Thermal Cvd ◽  
Post Annealing ◽  
Step Growth ◽  
Growth Approach

A two-step growth approach including seed layer epitaxy, post-annealing, and bulk layer epitaxy was proposed to deposit high quality Ge-rich Si1−xGex epilayer directly on Si substrate by reactive thermal CVD (RTCVD) at low temperature (350 °C).

Fabrication of Polycrystalline Silicon on Glass from Fluorinated Precursors with the Aid of Atomic Hydrogen

1995 ◽  
Vol 403 ◽  
Author(s):  
T. Akasaka ◽  
D. He ◽  
I. Shimizu
Keyword(s):  
Thin Films ◽  
Atomic Hydrogen ◽  
Polycrystalline Silicon ◽  
In Situ Observation ◽  
Layer By Layer ◽  
High Quality ◽  
Deposition Parameters ◽  
Columnar Grains ◽  
Step Growth

AbstractHigh quality polycrystalline silicon was made on glass from fluorinated precursors by two step growth, i.e., (1) formation of seed crystals on glass by layer-by-layer(LL) technique and (2) grain-growth on the seeds. In LL technique, deposition of ultra-thin films and treatment with atomic hydrogen was repeated alternately. Columnar grains with 200 nm dia were grown epitaxy-like on the seeds by optimizing the deposition parameters under in situ observation with spectroscopic ellipsometry.

Molecular beam epitaxy of high-quality CuI thin films on a low temperature grown buffer layer

2020 ◽  
Vol 116 (19) ◽  
pp. 192105 ◽  
Author(s):  
S. Inagaki ◽  
M. Nakamura ◽  
N. Aizawa ◽  
L. C. Peng ◽  
X. Z. Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Quality

The Role of thin Low Temperature Deposited GaAs Films on the two Step Growth of GaAs on Si By Mocvd

1988 ◽  
Vol 116 ◽  
Author(s):  
Hajine Inuzuka ◽  
Yasutoshi Suzuki ◽  
Naomi Awano ◽  
Kunihiko Hara
Keyword(s):  
Structural Change ◽  
Low Temperature ◽  
Three Dimensional ◽  
Gaas Layer ◽  
High Quality ◽  
Cross Sectional ◽  
Temperature Growth ◽  
Gaas Films ◽  
Step Growth

AbstractThe structural change of the thin low temperature (~450°C) deposited GaAs films and the role for conventional temperature growth were studied by RHEED and cross-sectional TEN observation. The formation of the threedimensional high quality single crystalline islands from continuous twin GaAs layer deposited at low temperature (~450°C) was clarified. These three-dimensional islands act as the seeds for conventional temperature growth.

scholarly journals Low-temperature rapid thermal CVD of nanocrystalline graphene on Cu thin films

2014 ◽  
Vol 251 (12) ◽  
pp. 2515-2520 ◽  
Author(s):  
Luca Croin ◽  
Ettore Vittone ◽  
Giampiero Amato
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Thermal Cvd
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