Investigation of Polarization Mechanism of Relaxor Ferroelectrics

1996 ◽  
Vol 453 ◽  
Author(s):  
Z. -Y. Cheng ◽  
R. S. Katiyar ◽  
Yao Xi
Keyword(s):  
Dielectric Constant ◽  
Low Temperature ◽  
Temperature Dependence ◽  
High Precision ◽  
Relaxor Ferroelectrics ◽  
Dielectric Behavior ◽  
Polar Regions ◽  
Thermally Activated ◽  
Polarization Mechanism ◽  
Constant Maximum

AbstractAddition to thermally activated flips of polar regions in relaxor ferroelectrics, a new polarization mechanism, which originates from the vibrations (breathing) of surface of polar regions, is introduced to explain the dielectric behavior of relaxor ferroelectrics. This new mechanism plays an important role in the dielectric behavior of such materials at low temperature. Based on the above assumption and general dielectric theory, a formula is given to characterize the temperature dependence of the dielectric constant. The correctness of the formula is verified by using it to fit the experimental results of the two typical relaxors. The fitted results show that the method is of high precision and that the temperature of the dielectric constant maximum is decided by the two polarization behavior. It also indicates that the new polarization is a resonance polarization.

Contribution to the Dielectric Behavior of Relaxers from the Surface of Nano-Order Cluster in the Materials

1997 ◽  
Vol 492 ◽  
Author(s):  
Z. -Y. Cheng ◽  
Aqiang Guo ◽  
R. S. Katiyar
Keyword(s):  
Dielectric Constant ◽  
Relaxation Time ◽  
Frequency Dependence ◽  
Relaxor Ferroelectrics ◽  
Dielectric Behavior ◽  
Experimental Results ◽  
Time Analysis ◽  
Resonance Process

ABSTRACTBased on the analysis of the dielectric behavior of relaxor ferroelectrics, it is assumed that the material has two polarization processes. Thus, a formula, which can fit the experimental results very well, is proposed to describe the temperature and frequency dependence of the dielectric constant. The fitted results show that there is a resonance process in the material and the peak of the dielectric constant is determined with both the relaxation and resonance processes. The relaxation time analysis shows that the peak of the dielectric constant indeed consists of two parts.

Two temperature regimes of triplet transfer in the dissociation of the correlated triplet pair after singlet fission

2019 ◽  
Vol 97 (6) ◽  
pp. 465-473 ◽  
Author(s):  
Tia S. Lee ◽  
YunHui L. Lin ◽  
Hwon Kim ◽  
Barry P. Rand ◽  
Gregory D. Scholes
Keyword(s):  
Low Temperature ◽  
Temperature Dependence ◽  
Temperature Regime ◽  
Transient Absorption Spectroscopy ◽  
Type Model ◽  
Singlet Fission ◽  
Temperature Dependent ◽  
Thermally Activated ◽  
Pair Separation ◽  
Triplet Pair

The ability to undergo spin-allowed exciton multiplication makes singlet fission materials promising for photovoltaic applications. Here, we examine the separation of correlated triplet pairs, 1(T…T), in polycrystalline pentacene films via temperature-dependent transient absorption spectroscopy. Single wavelength analysis reveals a profound delay in 1(T…T) dynamics. Moreover, the dynamics of 1(T…T) exhibit temperature dependence, whereas other features show no discernable temperature dependence. Previous literatures have suggested that correlated triplet separation is mediated by a thermally activated hopping process. Surprisingly, we found that the time constants governing triplet pair separation display two distinct temperature-dependent regimes of triplet transport. The high temperature regime follows a thermally activated hopping mechanism. The experimentally derived reorganization energy and electronic coupling is verified by density matrix renormalization group quantum chemical calculations. In addition, we evaluated the low temperature regime and show that the trend can be modelled by a Miller–Abrahams-type model that incorporates the effects of energetic disorder. We conclude that the correlated triplet pair separation is mediated by thermally activated hopping or a disorder driven Miller–Abrahams-type mechanism at high and low temperature, respectively. We observe that crossover between two regimes occurs ∼226 K. We find the time constant for triplet–triplet energy transfer to be 1.8 ps at ambient temperature and 21 ps at 77 K.

Influence of Li Addition on the Sintering and Dielectric Properties of PNN-PMW-PT Relaxor Ferroelectrics

1996 ◽  
Vol 453 ◽  
Author(s):  
Raghu Natarajan ◽  
Joseph P. Dougherty
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Low Temperature ◽  
High Dielectric Constant ◽  
Sintering Temperature ◽  
Relaxor Ferroelectrics ◽  
High Dielectric ◽  
And Shifts ◽  
Electrode Systems

AbstractCompositions in the PNN-PMW-PT system can be tailored to give high dielectric constant for MLC applications. Low temperature firing of MLC is always advantageous in using the less expensive electrode systems. Controlled addition of LiNO3 reduces the sintering temperature, increases the fired density and influences the microstructure of the ceramics. It also raises the peak dielectric constant and shifts the Curie temperature. The possible role of Li+ in modifying the characteristics of the ceramics is discussed.

Conductivity of the Granular Metal Films Obtained by High Dose Ion Implantation into Pmma

1995 ◽  
Vol 388 ◽  
Author(s):  
V.V. Bazarov ◽  
V.Yu. Petukhov ◽  
V.A. Zhikharev ◽  
I.B. Khaibullin
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Temperature Dependence ◽  
Metal Films ◽  
High Dose ◽  
High Fluence ◽  
Granular Film ◽  
Satisfactory Explanation ◽  
Thermally Activated ◽  
Ions Implantation

AbstractThin granular metal films in polymethylmethacrylate(PMMA) have been synthesized by 40 keV Fe+, ag+ or Pb+ ions implantation with fluencies up to 6*1017 ion/cm2. the resistivity of synthesized films was measured in the temperature range from 300K. to 5K. the temperature dependence of the resistivity of PMMA implanted with ag+, Pb+ and small fluence Fe+ obeys the well known law lnR~(l/T)1/2. the samples implanted by high fluence Fe+ reveal rather a different behaviour. at low temperature (T<100K) the curves R(T) fit the formulae inR~lnT. the two mechanisms of conductivity of a granular film are considered: direct tunneling and thermally activated hopping. Combined with the morphology features of films, obtained by high fluence Fe+ implantation, the above mentioned consideration offers a satisfactory explanation of the observed temperature dependence R(T).

Temperature dependence of the dielectric constant of relaxor ferroelectrics

1998 ◽  
Vol 57 (14) ◽  
pp. 8166-8177 ◽  
Author(s):  
Z.-Y. Cheng ◽  
R. S. Katiyar ◽  
X. Yao ◽  
A. S. Bhalla
Keyword(s):  
Dielectric Constant ◽  
Temperature Dependence ◽  
Relaxor Ferroelectrics

Influence of Ca-Doping on Structural, Magnetic and Dielectric Properties of Ba3Co2-xCaxFe24O41 Hexaferrite Powders

2015 ◽  
Vol 241 ◽  
pp. 226-236 ◽  
Author(s):  
Neha Solanki ◽  
Rajshree B. Jotania
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Sol Gel ◽  
Calcium Content ◽  
Combustion Method ◽  
Dielectric Behavior ◽  
Dielectric Parameters ◽  
Ca Doping ◽  
Auto Combustion ◽  
Magnetic And Dielectric Properties

Influence of Ca substitution on structural, magnetic and dielectric properties of Ba3Co2-xCaxFe24O41(where x = 0.0, 0.2, 0.4, 0.6, 0.8 and 1.0), prepared by Sol-Gel auto-combustion method, has been investigated in present studies. The obtained powder was sintered at 950 oC for 4 hrs. in the static air atmosphere. Structural analysis of Ca-doped Ba3Co2-xCaxFe24O41powders revealed pure Z-type hexaferrite phase at low temperature. The frequency dependent dielectric constant (Єʹ) and magnetic properties such as remanent magnetization (Mr), saturation magnetization (Ms) and coercivity (Hc) were studied. It is observed that coercivity increased gradually with increase in calcium content. The real dielectric constant (Єʹ) and dielectric loss tangent (tan δ) were studied in the frequency range of 20Hz to 2MHz. The dielectric parameters for all samples show normal dielectric behavior as observed in hexaferrites. Contents of Paper

The Microscopic Structure Of Shallow Donors In Silicon Carbide

1996 ◽  
Vol 442 ◽  
Author(s):  
J.-M. Spaeth ◽  
S. Greulich-Weber ◽  
M. März ◽  
E. N. Kalabukhova ◽  
S. N. Lukin
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Temperature Dependence ◽  
Double Resonance ◽  
Epr Spectra ◽  
Electron Nuclear Double Resonance ◽  
Paramagnetic Resonance ◽  
Vacancy Pair ◽  
Temperature Spectra ◽  
Electron Paramagnetic

AbstractThe electronic structure of nitrogen donors in 6H-, 4H- and 3C-SiC is investigated by measuring the nitrogen hyperfine (hf) interactions with electron nuclear double resonance (ENDOR) and the temperature dependence of the hf split electron paramagnetic resonance (EPR) spectra. Superhyperfine (shf) interactions with many shells of 13C and 29Si were measured in 6H-SiC. The hf and shf interactions are discussed in the framework of effective mass theory. The temperature dependence is explained with the thermal occupation of the lowest valley-orbit split A1 and E states. It is proposed that the EPR spectra of P donors observed previously in neutron transmuted 6H-SiC at low temperature (<10K) and high temperature (>60K) are all due to substitutional P donors on the two quasi-cubic and hexagonal Si sites, whereby at low temperature the E state is occupied and at high temperature the A1 state. The low temperature spectra are thus thought not to be due to P-vacancy pair defects as proposed previously.

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