On the Twin Boundary Propagation in (111) 3C-SiC Layers

2012 ◽  
Vol 717-720 ◽  
pp. 419-422 ◽  
Author(s):  
Maya Marinova ◽  
Ariadne Andreadou ◽  
Alkyoni Mantzari ◽  
Efstathios K. Polychroniadis

The present study reports on the propagation of twin boundaries in (111) 3C-SiC by means of conventional (CTEM) and high resolution transmission electron microscopy (HRTEM). The investigated 3C-SiC layers were homoepitaxially grown by Chemical Vapour Deposition (CVD) on layers previously grown by Vapor Liquid Solid (VLS) mechanism on 6H-SiC substrates. At the initial stages of growth the usual twin boundary that occurs is an incoherent {-211} Σ3 one. It transforms to more energetically favorable cases by several ways: (i) The initial {-211} boundary turns 90º, to a fully coherent (111) interface, forming microtwins; (ii) A step-like interface occurs with facets along the (111) and the {-211} planes; (iii) It transforms in a fourfold twin complex propagating to the surface.

1996 ◽  
Vol 452 ◽  
Author(s):  
U. Klement ◽  
D. Horst ◽  
F. Ernst

AbstractThe objective of this work is to find a material to replace amorphous hydrogenated silicon used as photosensitive part in the “retina” of an “electronic eye”. For that reason, ZnS, ZnSe, CdS and CdSe were chosen for investigations. Thin films, prepared by chemical vapour deposition, were characterized by transmission electron microscopy. The observed microstructures were correlated with the optoelectronic properties of these materials. CdSe was found to be the most promising material for our application. Hence, the influence of a dielectric interlayer and the effects of additional annealing treatments were analyzed for CdSe and will be discussed with respect to the optimization of the material.


2021 ◽  
Author(s):  
◽  
Xianming Liu

<p>Carbon nanotubes (CNTs) are a group of pure carbon solid materials that possess one-dimensional structures with diameters down to less than one nanometre. They have interesting physical properties such as very high tensile strength, metallic and semiconducting conductivity, and great potential for applications. This work investigates the synthesis, alignment and purification of multi-walled carbon nanotubes, which were characterized by Electron Microscopy, measurement of electrical properties and Raman scattering. Synthesis of multi-walled carbon nanotubes (MWNTs) was carried out by Chemical Vapour Deposition, using three different precursors: Fe(NO3)3, ferrocene and iron phthalocyanine. Vertically aligned "forests" of large numbers of MWNTs were achieved using ferrocene and iron phthalocyanine as precursors. Products from iron phthalocyanine yield more graphitic CNT nanostructures, as determined by Scanning Electron Microscopy, Transmission Electron Microscopy, Thermogravity Analysis, Raman microscopy and Energy Dispersive X-ray spectroscopy. Patterned growth of vertical MWNTs arrays with a resolution of 2 microns was also obtained, using a predeposited substrate. A High Resolution Transmission Electron Microscope was employed to investigate the inner structures of individual MWNTs, giving well-resolved images of concentric nanostructures with inter-lattice spacings of 0.34 nm. Techniques for purification and manipulation of CNTs are required before CNTs' excellent properties can be exploited. In this thesis, dielectrophoresis (DEP) under high-frequency AC voltages using an array of micron-scale electrodes was adopted as the technique to align MWNTs between these, electrodes. This technique is effective for MWNTs since their long cylindrical structure and the high mobility of their charge carriers allow them to be electrically polarised. As a result, MWNTs experience large DEP forces in an AC electric field. In our experiments, inter-digitated electrodes were used to apply the electric field to CNT suspensions in various solvents. Alignment of CNTs along their axis was achieved within the gaps between adjacent electrodes at a frequency larger than 1.1 MHz, The AC admittance changes between the electrodes were monitored and were observed to be a clear reflection of the accumulation process of MWNTs. Also it was identified that distilled water was a better solvent than ethanol and isopropanol for DEP purpose on MWNTs. In addition, a prototype device was built to selectively purify MWNTs from as-grown samples by combining DEP and re-circulating fluid flow. It was found that this device is able to decrease the impurity content of MWNTs, which is collected on the electrode array, from the suspension of as-grown samples.</p>


Author(s):  
A.G. Cullis

Heteroepitaxial compound semiconductor systems have increasing importance for the fabrication of advanced electronic devices. Microstructural characterisation of the finest features of these materials can be carried out using transmission electron microscopy (TEM) and this paper demonstrates the use of high resolution work for heterointerface and related investigations in two different areas.The epitaxial growth of wide band gap II-VI compounds offers potential for a number of optoelectronic device applications. Indeed, in some cases, such as for CdS, it is possible to prepare very high quality Wurtzite-structure layers on Sphalerite substrates, despite the presence of substantial misfit. When hexagonal close-packed CdS is grown by metal-organic chemical vapour deposition on (111)A GaAs, the layer is oriented with (0001)cds //(111)GaAs and [110]cds//[10]GaAs. A cross-sectional, high resolution micrograph of the interface is shown in Fig. 1a where the different atomic stacking in the CdS (ABAB....) and GaAs (ABCABC....) regions is evident.


1998 ◽  
Vol 510 ◽  
Author(s):  
Dov Cohent ◽  
D.L. Medlin ◽  
C. Barry Carter

AbstractThe structure of planar defects in GaP films grown by MBE on Si (110) was investigated by transmission electron microscopy. Growth of GaP films on the (110) surface produced numerous microtwins which formed both first and second order twin boundaries. Using high-resolution transmission electron microscopy, the atomic structure of Σ=3 and Σ=9 twin boundaries were studied. Both the Σ=3 and Σ=9 interfaces were observed to facet along specific crystallographic planes. Geometric models of the Σ=9 {221} twin boundary accounting for different polar bonding configurations were proposed and compared with experimental observations.


2010 ◽  
Vol 159 ◽  
pp. 39-48 ◽  
Author(s):  
Maya Marinova ◽  
Alkyoni Mantzari ◽  
Efstathios K. Polychroniadis

This work presents some recent results on the 3C-SiC structural defects, studied by Transmission Electron Microscopy (TEM). The samples studied were grown in several laboratories, using different methods. Commonly used methods for growth are Sublimation Epitaxy (SE), Physical Vapour Transport (PVT), Continuous Feed Physical Vapour Transport (CF-PVT), Chemical Vapour Deposition (CVD), and Liquid Phase Epitaxy (LPE). In all these methods, for both bulk and epitaxial layer growth, substrates from other polytypes are exploited like the common hexagonal polytypes 4H- and 6H-SiC or 3C-SiC seeds both in (111) and (100) orientation.


1996 ◽  
Vol 466 ◽  
Author(s):  
D. L. Medlin ◽  
S. M. Foiles ◽  
C. B. Carter

ABSTRACTHigh-resolution transmission electron microscopy (HRTEM) observations are presented of a/3[111] grain-boundary dislocations in an aluminum Σ=3[011] bicrystal. These dislocations are present on both (111) (coherent twin) and (211) (incoherent twin) facets of the bicrystal boundary. The dislocations on the coherent twin facet migrate by a climb process that increases the thickness of the twinned material. These dislocations originate on a Σ=3 (211) incoherent twin boundary where they are closely spaced and dissociated in a wide core configuration. Atomistic calculations of the defect structure and interaction of multiple a/3[111] grain boundary dislocations are discussed.


2010 ◽  
Vol 442 ◽  
pp. 7-14 ◽  
Author(s):  
M. Mansoor ◽  
Ian Kinloch ◽  
Brian Derby

The production of substrates coated with carbon nanotubes (CNTs) in well-defined patterns is desirable for sensor applications. In the present work, nickel based catalytic inks were prepared and printed on silicon substrates using inkjet delivery. Subsequently, the substrates were subjected to calcination and chemical vapour deposition for the growth of aligned CNTs. Scanning electron microscopy, transmission electron microscopy and Raman spectroscopy were used to characterize the CNTs. Various concentrations and formulations of ink preparations were studied to investigate the effect of these parameters on the growth and structure of the CNTs.


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