Amorphous Silicon Thin-Film Transistors with a Hot-Wire Active-Layer Deposited at High Growth Rate
Keyword(s):
Hot Wire
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ABSTRACTHigh-quality thin film transistors (TFT) with hydrogenated amorphous silicon (a-Si:H) deposited by hot-wire (HW) chemical vapor deposition as the active layer at growth rates above 20 Å/s are compared to TFTs with a-Si:H deposited by RF glow discharge at 1 Å/s. The subgap absorption measured by the constant photocurrent method and steady-state photoconductivity measured between source and drain are used to characterize the a-Si:H in the TFT. The activation energy of the dark conductivity is measured as a function of the gate voltage to obtain the position of the Fermi level. The effect of a bias stress on the TFT transfer curve is obtained.
Keyword(s):
2001 ◽
Vol 395
(1-2)
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pp. 330-334
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1990 ◽
Vol 110
(10)
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pp. 659-666
Keyword(s):