Annealing Characteristics of Electron Beam Evaporated Magnesium Oxide Thin Film

1997 ◽  
Vol 471 ◽  
Author(s):  
Y. C. Kang ◽  
J. B. Baik ◽  
B. H. Lee ◽  
J. H. Choi ◽  
J. M. Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Beam ◽  
Treatment Time ◽  
Diffraction Method ◽  
Life Time ◽  
Oxide Thin Film ◽  
X Ray Diffraction ◽  
Boundary Area ◽  
X Ray ◽  
Electron Microscopes

ABSTRACTThe effect of the annealing characteristics of MgO thin film, which is used as a protecting layer and known to play an important role to life time and lower the firing voltage in AC plasma displays, was investigated experimentally. MgO films were deposited on glass substrates by an electron beam evaporation method and annealed at different temperatures with varying heat treatment time. The characteristics of the crystallization and surface morphology of MgO films were changed by various annealing conditions, confirmed with X-ray diffraction method and scanning and transmission electron microscopes (SEM & TEM). With increasing annealing time and higher temperature, the intensity of the X-ray diffraction peak and the crystalline grain size of MgO increases. With the change of crystallinity and the decrease in grain boundary area, it is considered that the characteristics of firing voltage and life time of the plasma display panel can be improved with appropriate annealing process.

Study of the quality of GaAs thin film on Si substrate by X-ray diffraction method

1990 ◽  
Vol 7 (7) ◽  
pp. 308-311
Author(s):  
Li Chaorong ◽  
Mai Zhenhong ◽  
Cui Shufan ◽  
Zhou Junming ◽  
Yutian Wang
Keyword(s):  
Thin Film ◽  
Diffraction Method ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray

TiNi/GaAs Thin Film Structures for Gate Metallizations

2000 ◽  
Vol 648 ◽  
Author(s):  
Chichang Zhang ◽  
Aris Christou
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Sheet Resistance ◽  
Intermetallic Phase ◽  
Intermetallic Phases ◽  
Schottky Barriers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Alloy Tini

AbstractShape memory alloy TiNi thin films on GaAs have been investigated. A series of TiNi compositions were electron beam deposited on GaAs initially as thin multilayers of Ti and Ni. The intermetallic phase of TiNi was formed by annealing and complete intermixing of the multilayers at 370oC. The intermetallic phases were investigated with X-ray diffraction techniques. The annealing kinetics and resistivity investigations were carried out in order to minimize the sheet resistance of the intermetallic phase. TiNi Schottky barriers on GaAs have been fabricated and their performance will be reported. Additional investigations on surface morphology using the energy dispersive spectroscopy as well as TEM investigations show the correlation between microstructure, intermetallic phase formation and sheet resistance.

Controlled Synthesis of Nanostructured Nickel Oxide Thin Film for Supercapacitor Application

2018 ◽  
Vol 24 (8) ◽  
pp. 5587-5592
Author(s):  
S. C Bhise ◽  
D. V Awale ◽  
M. M Vadiyar ◽  
S. K Patil ◽  
B. N Kokare ◽  
...  
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Electrochemical Impedance ◽  
Oxide Thin Film ◽  
Storage Device ◽  
Controlled Synthesis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Supercapacitor Application ◽  
Nio Thin Film

In the present work we report the controlled synthesis of NiO thin film with nano-leaves like morphology using reflux method. The synthesized NiO electrode is used as working electrode for supercapacitor application. The deposited NiO thin film was characterized using thermogravimetric (TGA) analysis, Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The supercapacitor behaviour of NiO was investigated by cyclic voltammetry, galvanostatic charge/discharge and electrochemical impedance spectroscopy using 3 M KOH electrolyte. The electrochemical results show specific capacitance of 513 F g−1 at 10 mV s−1 scan rate, power density (10.44 kW kg−1), energy density (14 Wh kg−1) and 85% capacitance retention over 5000 cycles. These remarkable results indicate the importance of the NiO nano-leaves electrode in energy storage device.

Thickness Measurement of Thin Textured Films by a Novel X-Ray Diffraction Method Accounting for Secondary Extinction

2007 ◽  
Vol 130 ◽  
pp. 43-46 ◽  
Author(s):  
I. Tomov ◽  
S. Vassilev
Keyword(s):  
Thin Film ◽  
Diffraction Method ◽  
Thickness Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Model Sample ◽  
Silver Thin Film ◽  
Secondary Extinction ◽  
Main Component

Accounting for secondary extinction (SE) of the intensities measured from a textured film by means of conventional X-ray diffractometer, a new X-ray diffraction method is described for determination of film thickness. Physically, the problem is restricted to using a reflection pair corresponding to the main component of the texture. As model sample a vacuum-deposited silver thin film is used.

scholarly journals Structural and tribological properties of tungsten oxide thin film on a silicon substrate

2020 ◽  
Vol 44 (11-12) ◽  
pp. 744-749
Author(s):  
Siamak Ziakhodadadian ◽  
Tianhui Ren
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Tungsten Oxide ◽  
Oxide Thin Film ◽  
X Ray Diffraction ◽  
Oxide Thin Films ◽  
X Ray ◽  
Tungsten Oxide Thin Films ◽  
Scanning Electron

In this work, tungsten oxide thin films are deposited on silicon substrates using the hot filament chemical vapor deposition system. The influence of substrate temperature on the structural, morphological, and elemental composition of the tungsten oxide thin films is investigated using X-ray diffraction, field-emission scanning electron microscopy, and X-ray photoelectron spectroscopy techniques. Also, the mechanical and tribological properties of these thin films are considered using nanoindentation and scratch tests. Based on X-ray diffraction results, it can be concluded that tungsten oxide thin films are synthesized with a cubic WO3 structure. From field-emission scanning electron microscopy images, it can be seen that tungsten oxide thin films are made of crystal clusters which have grown vertically on the substrate surface. In addition, the results exhibit two asymmetric W4d5/2 and W4d7/2 peaks which can be assigned to W5+ and W4+ species, respectively. The mechanical results show that the hardness and the elastic modulus increase on raising the substrate temperature up to 600 °C. From the tribological performances, the friction coefficient of the tungsten oxide thin film decreases on increasing the substrate temperature.

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