Characterization of the Ni/NiO, Interface Region in Oxidized High Purity Nickel by Transmission Electron Microscopy

1985 ◽  
Vol 48 ◽  
Author(s):  
Howard T. Sawhill ◽  
Linn W. Hobbs
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Purity ◽  
Structure Factor ◽  
Dihedral Angles ◽  
Interfacial Energies ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
Interface Structures

ABSTRACTNi/NiO interface structures were investigated using TEM, and the observed structures were compared with current heterophase interface models. Relative magnitudes of Ni/NiO interfacial energies were obtained from measurements of dihedral angles at triple grain junctions between Ni and NiO grains. Extra reflections in diffraction patterns from oxide grains adjacent to the Ni/NiO interface were compared with kinematical structure factor calculations for several proposed structures.

Characterization of Al2O3 in High-Strength Mo Alloy Sheets by High-Resolution Transmission Electron Microscopy

2016 ◽  
Vol 22 (1) ◽  
pp. 122-130 ◽  
Author(s):  
Yucheng Zhou ◽  
Yimin Gao ◽  
Shizhong Wei ◽  
Yajie Hu
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Tensile Strength ◽  
High Resolution ◽  
Boundary Migration ◽  
Recrystallization Temperature ◽  
Rolled Sheet ◽  
Transmission Electron ◽  
Diffraction Patterns

AbstractA novel type of alumina (Al2O3)-doped molybdenum (Mo) alloy sheet was prepared by a hydrothermal method and a subsequent powder metallurgy process. Then the characterization of α-Al2O3 was investigated using high-resolution transmission electron microscopy as the research focus. The tensile strength of the Al2O3-doped Mo sheet is 43–85% higher than that of the pure Mo sheet, a very obvious reinforcement effect. The sub-micron and nanometer-scale Al2O3 particles can increase the recrystallization temperature by hindering grain boundary migration and improve the tensile strength by effectively blocking the motion of the dislocations. The Al2O3 particles have a good bond with the Mo matrix and there exists an amorphous transition layer at the interface between Al2O3 particles and the Mo matrix in the as-rolled sheet. The sub-structure of α-Al2O3 is characterized by a number of nanograins in the $\left[ {2\bar{2}1} \right]$ direction. Lastly, a new computer-based method for indexing diffraction patterns of the hexagonal system is introduced, with 16 types of diffraction patterns of α-Al2O3 indexed.

Electron microscopy characterization of monoclinic SiAs precipitates in heavily As+-implanted silicon

1991 ◽  
Vol 6 (8) ◽  
pp. 1701-1710 ◽  
Author(s):  
A. Armigliato ◽  
A. Parisini
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Annealing Temperature ◽  
X Ray ◽  
Transmission Electron ◽  
Small Precipitate ◽  
Diffraction Patterns ◽  
Microscopy Characterization ◽  
First Time

Silicon wafers have been implanted with As+ ions at an energy of 100 keV and a dose of 1 × 1017 cm−2 and subsequently annealed at 1050°for 15 min. This results in a peak As concentration of 7 × 1021 cm−3, which is far beyond the solid solubility value of arsenic in silicon at this annealing temperature. Rod-like precipitates, dislocations, and small precipitate-like defects have been observed by transmission electron microscopy. From the analysis of several diffraction patterns taken on a number of rod-like particles at different tilt angles, it has been unambiguously found that they have the structure of the monoclinic SiAs compound previously reported in literature. The stoichiometry of the precipitates has been confirmed by x-ray microanalysis. To our knowledge, this is the first time that this SiAs phase is detected in As+-implanted silicon.

Fast microstructure and phase analyses of nanopowders using combined analysis of transmission electron microscopy scattering patterns

2014 ◽  
Vol 70 (5) ◽  
pp. 448-456 ◽  
Author(s):  
P. Boullay ◽  
L. Lutterotti ◽  
D. Chateigner ◽  
L. Sicard
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
Structure Refinement ◽  
Pattern Search ◽  
Phase Identification ◽  
Combined Analysis ◽  
Transmission Electron ◽  
Diffraction Patterns

The full quantitative characterization of nanopowders using transmission electron microscopy scattering patterns is shown. This study demonstrates the feasibility of the application of so-called combined analysis, a global approach for phase identification, structure refinement, characterization of anisotropic crystallite sizes and shapes, texture analysis and texture variations with the probed scale, using electron diffraction patterns of TiO2and Mn3O4nanocrystal aggregates and platinum films. Electron diffraction pattern misalignments, positioning, and slight changes from pattern to pattern are directly integrated and refined within this approach. The use of a newly developed full-pattern search–match methodology for phase identification of nanopowders and the incorporation of the two-wave dynamical correction for diffraction patterns are also reported and proved to be efficient.

Effects of High-Energy Ions on Synthetic Quartz

1972 ◽  
Vol 30 ◽  
pp. 544-545
Author(s):  
Joseph J. Comer ◽  
Charles Bergeron ◽  
Lester F. Lowe
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Beam ◽  
High Energy ◽  
Transmission Electron ◽  
Kikuchi Lines ◽  
High Energy Ions ◽  
Diffraction Patterns ◽  
Dauphiné Twinning ◽  
Beam Damage

Using a Van De Graaff Accelerator thinned specimens were subjected to bombardment by 3 MeV N+ ions to fluences ranging from 4x1013 to 2x1016 ions/cm2. They were then examined by transmission electron microscopy and reflection electron diffraction using a 100 KV electron beam.At the lowest fluence of 4x1013 ions/cm2 diffraction patterns of the specimens contained Kikuchi lines which appeared somewhat broader and more diffuse than those obtained on unirradiated material. No damage could be detected by transmission electron microscopy in unannealed specimens. However, Dauphiné twinning was particularly pronounced after heating to 665°C for one hour and cooling to room temperature. The twins, seen in Fig. 1, were often less than .25 μm in size, smaller than those formed in unirradiated material and present in greater number. The results are in agreement with earlier observations on the effect of electron beam damage on Dauphiné twinning.

Examination of Extra Electron Diffraction Spots Observed in Deuterium-Irradiated Silicon by Using Parallel Electron Beam Illumination

1990 ◽  
Vol 48 (2) ◽  
pp. 490-491
Author(s):  
Ryuichiro Oshima ◽  
Shoichiro Honda ◽  
Tetsuo Tanabe
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Single Crystal ◽  
Mixed Solution ◽  
Parallel Beam ◽  
Defect Clusters ◽  
Float Zone ◽  
Transmission Electron ◽  
Extra Electron ◽  
Diffraction Patterns

In order to examine the origin of extra diffraction spots and streaks observed in selected area diffraction patterns of deuterium irradiated silicon, systematic diffraction experiments have been carried out by using parallel beam illumination.Disc specimens 3mm in diameter and 0.5mm thick were prepared from a float zone silicon single crystal(B doped, 7kΩm), and were chemically thinned in a mixed solution of nitric acid and hydrogen fluoride to make a small hole at the center for transmission electron microscopy. The pre-thinned samples were irradiated with deuterium ions at temperatures between 300-673K at 20keV to a dose of 1022ions/m2, and induced lattice defects were examined under a JEOL 200CX electron microscope operated at 160kV.No indication of formation of amorphous was obtained in the present experiments. Figure 1 shows an example of defects induced by irradiation at 300K with a dose of 2xl021ions/m2. A large number of defect clusters are seen in the micrograph.

Interface structures in polycrystalline ceramic materials

1986 ◽  
Vol 44 ◽  
pp. 468-471
Author(s):  
K. J. Morrissey
Keyword(s):  
Electron Microscopy ◽  
Analytical Electron Microscopy ◽  
Physical And Mechanical Properties ◽  
High Resolution Electron Microscopy ◽  
Ceramic Materials ◽  
Polycrystalline Materials ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Interface Structures

Grain boundaries and interfaces play an important role in determining both physical and mechanical properties of polycrystalline materials. To understand how the structure of interfaces can be controlled to optimize properties, it is necessary to understand and be able to predict their crystal chemistry. Transmission electron microscopy (TEM), analytical electron microscopy (AEM,), and high resolution electron microscopy (HREM) are essential tools for the characterization of the different types of interfaces which exist in ceramic systems. The purpose of this paper is to illustrate some specific areas in which understanding interface structure is important. Interfaces in sintered bodies, materials produced through phase transformation and electronic packaging are discussed.

Characterization of submicrometer fluid Inclusions in minerals by Analytical/Transmission Electron Microscopy and electron diffraction

1990 ◽  
Vol 48 (4) ◽  
pp. 424-424
Author(s):  
George Guthrie ◽  
David Veblen
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Microscope ◽  
Electron Diffraction ◽  
Light Microscopy ◽  
Fluid Inclusions ◽  
Energy Dispersive Spectrometer ◽  
Analytical Transmission Electron Microscopy ◽  
Transmission Electron

The nature of a geologic fluid can often be inferred from fluid-filled cavities (generally <100 μm in size) that are trapped during the growth of a mineral. A variety of techniques enables the fluids and daughter crystals (any solid precipitated from the trapped fluid) to be identified from cavities greater than a few micrometers. Many minerals, however, contain fluid inclusions smaller than a micrometer. Though inclusions this small are difficult or impossible to study by conventional techniques, they are ideally suited for study by analytical/ transmission electron microscopy (A/TEM) and electron diffraction. We have used this technique to study fluid inclusions and daughter crystals in diamond and feldspar.Inclusion-rich samples of diamond and feldspar were ion-thinned to electron transparency and examined with a Philips 420T electron microscope (120 keV) equipped with an EDAX beryllium-windowed energy dispersive spectrometer. Thin edges of the sample were perforated in areas that appeared in light microscopy to be populated densely with inclusions. In a few cases, the perforations were bound polygonal sides to which crystals (structurally and compositionally different from the host mineral) were attached (Figure 1).

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