Analysis of Radiative Recombination and Optical Gain in Gallium Nitride-Based Heterostructures

1996 ◽  
Vol 421 ◽  
Author(s):  
Petr G. Eliseev ◽  
Vladimir A. Smagley ◽  
Marek Osiński
Keyword(s):  
Gallium Nitride ◽  
Theoretical Calculation ◽  
Current Density ◽  
Radiative Recombination ◽  
Optical Gain ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Minimum Threshold ◽  
Effective Masses ◽  
Emitting Lasers

AbstractThreshold current density in GaN-based UV double-heterostructure lasers is predicted in the range of 2- 4 kA/cm2 using theoretical calculation of optimized heterostructure for various types of devices. Freecarrier (FC) and Coulomb-enhancement (CE) models are compared. Results are given for different combinations of effective masses. The minimum threshold current is not strongly influenced by the choice of effective masses. The FC model predicts lower than CE threshold in edge-emitting lasers, whereas the CE model predicts lower than EC threshold in thin VCSEL devices.

Growth of Uniform InGaAs Bulk Crystal by Multi-Component Zone Melting Method

1995 ◽  
Vol 417 ◽  
Author(s):  
T. Kusunoki ◽  
K. Nakajima ◽  
H. Shoji ◽  
T. Suzuki
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Threshold Current ◽  
Zone Melting ◽  
Threshold Current Density ◽  
Bulk Crystal ◽  
Minimum Threshold ◽  
Melting Method ◽  
Strained Quantum Well ◽  
Uniform Composition

AbstractWe have developed a Multi-component Zone Melting method to grow a ternary compound crystal which has a uniform composition. A 4.5 mm long InGaAs bulk crystal with a uniform InAs composition of 0.3 has been successfully grown using this method. InGaAlAs/InGaAs strained quantum well lasers were fabricated on an In0. 2Ga0.8As substrate which was grown by this method. A minimum threshold current density of 280 A/cm2 was achieved.

Submilliamp 1.3 [micro sign]m vertical-cavity surface-emitting lasers with threshold current density of < 500 A/cm2

1997 ◽  
Vol 33 (12) ◽  
pp. 1052 ◽  
Author(s):  
Y. Qian ◽  
Z.H. Zhu ◽  
Y.H. Lo ◽  
D.L. Huffaker ◽  
D.G. Deppe ◽  
...  
Keyword(s):  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

Low Threshold Current Density Surface-Emitting Lasers Buried by Amorphous GaAs

1995 ◽  
Author(s):  
Hyo-Hoon PARK ◽  
Byueng-Su YOO ◽  
El-Hang LEE ◽  
Min Soo PARK ◽  
Byung Tea AHN
Keyword(s):  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Surface Emitting Lasers ◽  
Density Surface ◽  
Low Threshold ◽  
Emitting Lasers

scholarly journals Performance characteristics of GaN/Al0.2Ga0.8N quantum dot laser at L=100Å

2018 ◽  
Vol 65 (1) ◽  
pp. 38
Author(s):  
Halima Bouchenafa ◽  
Boucif Benichou ◽  
Badra Bouabdallah
Keyword(s):  
Quantum Dot ◽  
Semiconductor Lasers ◽  
Current Density ◽  
Matrix Theory ◽  
Optical Gain ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Low Threshold ◽  
P Type ◽  
Density Matrix Theory

In this paper, a theoretical model is used to study the optical gain characteristics of  quantum dot lasers. The model is based on the density matrix theory of semiconductor lasers with relaxation broadening. The effect of doping with varying the side lengths of the box in the structure is taken into account. A comparative study of the gain spectra of p-doped, undoped and n-doped structures of  cubic quantum-dot (QD) laser respectively, is presented for various side lengths. The variation of peak gain on carrier density is also presented. The effect of side length on the variation in modal gain versus current density is plotted too. The results indicate that the p type doping is efficient to reach a better optical gain value, and to achieve low threshold current densities compared with undoped and  n-doped structures, and the optimum value for quantum dot width to achieve the lower threshold current density for the three cases is L=100A .   

scholarly journals Лазеры на основе квантовых яма-точек, излучающие в оптических диапазонах 980 и 1080 nm

2019 ◽  
Vol 45 (4) ◽  
pp. 42
Author(s):  
А.М. Надточий ◽  
С.А. Минтаиров ◽  
Н.А. Калюжный ◽  
Ю.М. Шерняков ◽  
Г.О. Корнышов ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Current Density ◽  
Internal Quantum Efficiency ◽  
Active Regions ◽  
Threshold Current ◽  
Threshold Current Density ◽  
New Type ◽  
Emitting Lasers

AbstractThe main characteristics of edge-emitting lasers with active regions based on nanoheterostructures of a new type—quantum well-dots (QWDs) operating at various wavelengths—are compared. The QWD structures operating at 980- and 1080-nm wavelengths demonstrated minimum values of threshold current density (160 and 125 A/cm^2), high internal quantum efficiency (74 and 85%), and low internal losses (1.1 and 0.9 cm^–1), respectively.

Decreasing the threshold current density in Si lasers fabricated by using dressed-photons

2015 ◽  
Vol 1 (1) ◽  
Author(s):  
H. Tanaka ◽  
T. Kawazoe ◽  
M. Ohtsu ◽  
K. Akahane
Keyword(s):  
Spontaneous Emission ◽  
Current Density ◽  
Optical Gain ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Annealing Process ◽  
Optical Confinement ◽  
Light Waveguide ◽  
Soi Technology

Abstract:We fabricated a silicon (Si) laser by applying a dressed-photon–phonon assisted annealing process to a ridge-type light waveguide that we fabricated via siliconon- insulator (SOI) technology. We also evaluated a nearinfrared Si photodiode having optical gain to estimate the differential gain coefficient for designing lightwaveguides. We designed light waveguides having a thickness of 15 μm to realize a large optical confinement factor. The fabricated Si laser oscillated at a wavelength of 1.4 μm. The intensity of amplified spontaneous emission (ASE) lightwas too low to be observed, because the threshold current density was so low that the Si laser started oscillating immediately after ASE occurred. The threshold current density for oscillation was estimated to be 40 A/cm

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