Photoluminescence Characterization of p-type GaN:Mg

1997 ◽  
Vol 482 ◽  
Author(s):  
Dorina Corlatan ◽  
Joachim Krüger ◽  
Christian Kisielowski ◽  
Ralf Klockenbrink ◽  
Yihwan Kim ◽  
...  
Keyword(s):  
Layer Structure ◽  
Growth Conditions ◽  
Buffer Layers ◽  
Near Band Edge ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Si Doped ◽  
P Type ◽  
Mg Doped

AbstractWe report on results of low-temperature photoluminescence measurements performed on GaN films, grown by molecular beam epitaxy (MBE) on sapphire substrates. The GaN films are either Mg doped (p-type) or consist of a Mg-doped layer on top of a Si doped GaN layer (n-type). In the p-doped samples, the sharpness of the donor-acceptor-pair transition is striking, three phonon replicas are clearly resolved. A transition band occurs around 3.4 eV, which becomes dominant for samples with an np-layer structure. The position and the composition of the near band edge transitions are influenced by the growth of the buffer layers. Depending on the growth conditions a transition at 3.51 eV can be observed.

Photoluminescence Characterization of Carrier Recombination Centers in 4H-SiC Substrates by Utilizing below Gap Excitation

2017 ◽  
Vol 897 ◽  
pp. 315-318
Author(s):  
Keitaro Kondo ◽  
Norihiko Kamata ◽  
Hiroyuki Yaguchi ◽  
Shuhei Yagi ◽  
Takeshi Fukuda ◽  
...  
Keyword(s):  
Density Dependence ◽  
Intensity Change ◽  
Device Performance ◽  
Acceptor Pair ◽  
Carrier Recombination ◽  
Donor Acceptor ◽  
Recombination Centers ◽  
P Type ◽  
Growth Technology

Though the crystal growth technology of SiC is improving steadily, it is still crucial to reduce crystalline defects which act as carrier recombination (CR) centers and deteriorate device performance. We detected CR centers in a p-type 4H-SiC substrate by observing the intensity change of photoluminescence due to the addition of a below-gap excitation (BGE) light of 0.93[eV]. We noticed the temperature and the BGE density dependence of band edge (BE) emission in addition to donor acceptor pair (DAP) emission and discriminated the temperature effect from that of BGE. The BGE density dependence of the PL intensity quenching is different among the BE emission, B0- and C0-lines of the DAP, respectively. It gives us an important clue for understanding CR mechanisms inside the bandgap of SiC.

Photoluminescence characterization of Mg implanted GaN

1999 ◽  
Vol 595 ◽  
Author(s):  
C. Ronning ◽  
H. Hofsäss ◽  
A. Stötzler ◽  
M. Deicher ◽  
E.P. Carlson ◽  
...  
Keyword(s):  
Nitride Layer ◽  
Optically Active ◽  
Electrical Measurements ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Optical Activation ◽  
Nitride Layers ◽  
P Type ◽  
High Degree

AbstractSingle crystalline (0001) gallium nitride layers, capped with a thin epitaxial aluminum nitride layer, were implanted with magnesium and subsequently annealed in vacuum to 1150-1300 oC for 10-60 minutes. Photoluminescence (PL) measurements showed the typical donor acceptor pair (DAP) transition at 3.25 eV after annealing at high temperatures, which is related to optically active Mg acceptors in GaN. After annealing at 1300 °C a high degree of optical activation of the implanted Mg atoms was reached in the case of low implantation doses. Electrical measurements, performed after removing the AlN-cap and the deposition of Pd/Au contacts, showed no p-type behavior of the GaN samples due to the compensation of the Mg acceptors with native n-type defects.

p-doping of GaN by MOVPE

1997 ◽  
Vol 2 ◽  
Author(s):  
S. Haffouz ◽  
B. Beaumont ◽  
M. Leroux ◽  
M. Laugt ◽  
P. Lorenzini ◽  
...  
Keyword(s):  
Broad Band ◽  
Shallow Donor ◽  
Solid Particles ◽  
Activation Process ◽  
Ir Absorption ◽  
Local Vibration ◽  
Donor Acceptor ◽  
Si Doped ◽  
P Type ◽  
Mg Doped

Mg has been widely used as p-doping species despite its intrinsic difficulties. It is nowadays well established that during the growth process of Mg doped GaN, atomic H is generated from the decomposition of NH3 and Mg-H complexes are formed in the layer. This has been for instance shown by the occurrence of LO mode in IR absorption, and by the observation of the Mg-H local vibration modes. This H passivation limits the electrical activity of Mg, therefore an activation process is required to get full activation of the Mg atoms. In the present study, bismethylcyclopentadienyl magnesium [(MeCp)2Mg] was used as precursor. However, this precursor reacts in the gas phase with NH3 to produce tiny solid particles as evidenced by a very bright diffuse emission visible along the laser beam used for reflectometry measurements. This simplest obvious product would be [(MeCp)Mg(NH2)]m(m≥2). To limit this drawback, Ga and Mg precursor lines have been separated. With proper in situ heat treatment, doping densities up to 1.5×1018 cm−3 have been obtained. PL spectra of lightly Mg doped samples (1016 cm−3) are dominated by shallow donor-acceptor pairs whereas for higher doping densities ( 1018 cm−3), the luminescence is dominated by a broad band in the 2.7-2.9 eV range. GaN LEDs were fabricated from Si doped (n-type) and Mg-doped (p-type) GaN, these LEDs emit in the blue-UV range.

scholarly journals Photoluminescence characterization of Mg implanted GaN

2000 ◽  
Vol 5 (S1) ◽  
pp. 725-732 ◽  
Author(s):  
C. Ronning ◽  
H. Hofsäss ◽  
A. Stötzler ◽  
M. Deicher ◽  
E.P. Carlson ◽  
...  
Keyword(s):  
Nitride Layer ◽  
Optically Active ◽  
Electrical Measurements ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Optical Activation ◽  
Nitride Layers ◽  
P Type ◽  
High Degree

Single crystalline (0001) gallium nitride layers, capped with a thin epitaxial aluminum nitride layer, were implanted with magnesium and subsequently annealed in vacuum to 1150-1300 °C for 10-60 minutes. Photoluminescence (PL) measurements showed the typical donor acceptor pair (DAP) transition at 3.25 eV after annealing at high temperatures, which is related to optically active Mg acceptors in GaN. After annealing at 1300 °C a high degree of optical activation of the implanted Mg atoms was reached in the case of low implantation doses. Electrical measurements, performed after removing the AlN-cap and the deposition of Pd/Au contacts, showed no p-type behavior of the GaN samples due to the compensation of the Mg acceptors with native n-type defects.

Photoluminescence Characterization of Heteroepitaxial ZnSe/GaAs and ZnSe/AlAs Grown By MBE

1987 ◽  
Vol 102 ◽  
Author(s):  
B. J. Skromme ◽  
M. C. Tamargo ◽  
J. L. De Miguel ◽  
R. E. Nahory
Keyword(s):  
Buffer Layer ◽  
Molecular Beam ◽  
Crystal Defects ◽  
Buffer Layers ◽  
Acceptor Pair ◽  
Strain Fields ◽  
Donor Acceptor ◽  
Tentative Explanation ◽  
Donor Acceptor Pair

ABSTRACTHeteroepitaxial ZnSe grown by molecular beam epitaxy (MBE) has been characterized using low temperature photoluminescence (PL) and reflectance. Excitonic PL linewidths of thick (relaxed) ZnSe layers are>1.4 meV, and depend little on the type of substrate or buffer layer used (e.g. GaAs or AlAs). In contrast, thin (pseudomorphic) ZnSe layers on AlAs buffer layers of moderate thickness are found to exhibit by far the sharpest (FWHM=0.22-0.37 meV) excitonic features ever observed for heteroepitaxial ZnSe grown by any technique. A tentative explanation for this result is that step-grading the lattice constant (by the AlAs buffer layer) has eliminated the crystal defects which produce localized strain fields that inhomogeneously broaden the peaks in ZnSe/GaAs. Acceptor-related PL peaks are discussed, and the first discrete donor-acceptor pair line spectrum in heteroepitaxial ZnSe is reported.

Mechanism of donor–acceptor pair recombination in Mg-doped GaN epilayers grown on sapphire substrates

1998 ◽  
Vol 84 (4) ◽  
pp. 2082-2085 ◽  
Author(s):  
T. W. Kang ◽  
S. H. Park ◽  
H. Song ◽  
T. W. Kim ◽  
G. S. Yoon ◽  
...  
Keyword(s):  
Acceptor Pair ◽  
Sapphire Substrates ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Mg Doped

Fluorescent P-Type 4H-SiC Grown by PVT Method

2016 ◽  
Vol 858 ◽  
pp. 326-330
Author(s):  
Shi Yi Zhuo ◽  
Xi Liu ◽  
Pao Gao ◽  
Wei Huang ◽  
Cheng Feng Yan ◽  
...  
Keyword(s):  
Visible Light ◽  
Room Temperature ◽  
Light Emission ◽  
Green Fluorescence ◽  
Acceptor Pair ◽  
Aluminum Doping ◽  
Visible Light Range ◽  
Donor And Acceptor ◽  
Donor Acceptor ◽  
P Type

Fluorescent SiC, which contains donor and acceptor impurities with optimum concentrations, can work as a phosphor for visible light emission by donor-acceptor-pair (DAP) recombination. In this work, 3 inch N-B-Al co-doped fluorescent 4H-SiC crystals are prepared by PVT method. The p-type fluorescent 4H-SiC with low aluminum doping concentration can show intensive yellow-green fluorescence at room temperature. N-B DAP peak wavelength shifts from 578nm to 525nm and weak N-Al DAP emission occurred 403/420 nm quenches, when the temperature increases from 4K to 298K. The aluminum doping induces higher defect concentration in the fluorescent crystal and decreases optical transmissivity of the crystal in the visible light range. It triggers more non-radiative recombination and light absorption losses in the crystal.

Effects of Substrate Misorientation and the Growth Mechanism of Si Doped GaAs Grown on (111)A Substrate by MBE

1989 ◽  
Vol 160 ◽  
Author(s):  
Y. Okano ◽  
H. Seto ◽  
M. Shigeta ◽  
S. Nishine ◽  
I. Fujimoto ◽  
...  
Keyword(s):  
Growth Mechanism ◽  
Hole Concentration ◽  
Donor Site ◽  
Flux Ratio ◽  
Acceptor Pair ◽  
Mbe Growth ◽  
Donor Acceptor ◽  
Si Doped ◽  
Doping Mechanism ◽  
Donor Acceptor Pair

AbstractThe MBE growth of Si doped GaAs on slightly misoriented (111)A substrates was examined. The conduction types and the carrier concentrations were greatly affected by the degree of substrate misorientation. In the growth on an exactly (111)A oriented substrate, substantially all Si atoms acted as acceptors. With increase of the degree of misorientation and/or with increase of the flux ratio (JAs4/JGa), the number of donor-site Si atoms increased, that is, the hole concentration first decreased by autocompensation of Si and then the conductivity reversed from p-type to n-type. The photoluminescence of highly compensated (111)A films showed characteristics of donor-acceptor pair recombination. A doping mechanism including preferential decomposition of As4 molecules at the steps was proposed.

p-type conductivity and donor-acceptor pair emission in Cd1−xFexS dilute magnetic semiconductors

2006 ◽  
Vol 89 (26) ◽  
pp. 262118 ◽  
Author(s):  
X. J. Wu ◽  
D. Z. Shen ◽  
Z. Z. Zhang ◽  
J. Y. Zhang ◽  
K. W. Liu ◽  
...  
Keyword(s):  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Acceptor Pair ◽  
Type Conductivity ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
P Type

scholarly journals Time Resolved Photoluminescence of Cubic Mg Doped GaN

1999 ◽  
Vol 572 ◽  
Author(s):  
R. Seitz ◽  
C. Gaspar ◽  
T. Monteiro ◽  
E. Pereira ◽  
B. Schoettker ◽  
...  
Keyword(s):  
Blue Emission ◽  
Spectral Shift ◽  
Excitation Density ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Deep Donor ◽  
Cubic Gan ◽  
Donor Acceptor ◽  
Time Resolved Photoluminescence ◽  
Mg Doped

ABSTRACTMg doped cubic GaN layers were studied by steady state and time resolved photoluminescence. The blue emission due to Mg doping can be decomposed in three bands. The decay curves and the spectral shift with time delays indicates donor-acceptor pair behaviour. This can be confirmed by excitation density dependent measurements. Furthermore temperature dependent analysis shows that the three emissions have one impurity in common. We propose that this is an acceptor level related to the Mg incorporation and the three deep donor levels are due to compensation effects.

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