Silicon-Based Optoelectronics

1997 ◽  
Vol 486 ◽  
Author(s):  
Ch. Buchal ◽  
M. Löken ◽  
M. Siegert
Keyword(s):  
Visible Light ◽  
Optical Amplifiers ◽  
Light Sources ◽  
Rapid Progress ◽  
All Optical ◽  
Band Absorption ◽  
Silicon Based ◽  
Msm Photodetectors ◽  
New Si ◽  
Si Wafer

AbstractThe potential of silicon-based designs for various optoelectronic functions is discussed. Sibased light detectors are the most advanced, especially in the form of metal-Si-metal (MSM) photodetectors. They use Si band to band absorption for visible light and Schottky-barrier emission for the infrared (IR). The different light sources show rapid progress, but still face challenges to reach a quantum efficiency of 10−2. In addition to the intrinsic silicon based designs, some new Si breadboard concepts are shown: especially for waveguides, modulators and all-optical amplifiers, it may be advantageous to add entirely different materials (polymers, glasses, BaTiO3 or Al2O3) onto the Si wafer.

A high-performance visible-light-driven all-optical switch enabled by ultra-thin gallium sulfide

2021 ◽  
Author(s):  
Kai Xu ◽  
Bao Yue Zhang ◽  
Yihong Hu ◽  
Muhammad Waqas Khan ◽  
Rui Ou ◽  
...  
Keyword(s):  
Optical Properties ◽  
Visible Light ◽  
High Performance ◽  
Optical Switch ◽  
Gallium Sulfide ◽  
All Optical ◽  
Visible Light Driven ◽  
On Chip ◽  
All Optical Switch ◽  
Silicon Based

A 2D Ga2S3 enabled all-optical switch is realized upon a silicon-based on-chip platform. With the unique optical properties of the 2D nanoflakes, the device exhibits excellent switching behaviors driven by visible light at a low power density.

scholarly journals All-Optical Non-Inverted Parity Generator and Checker Based on Semiconductor Optical Amplifiers

2021 ◽  
Vol 11 (4) ◽  
pp. 1499
Author(s):  
Bingchen Han ◽  
Junyu Xu ◽  
Pengfei Chen ◽  
Rongrong Guo ◽  
Yuanqi Gu ◽  
...  
Keyword(s):  
Optical Amplifiers ◽  
Signal To Noise Ratio ◽  
Low Cost ◽  
Extinction Ratio ◽  
Semiconductor Optical Amplifiers ◽  
Optical Signal ◽  
Probe Light ◽  
All Optical ◽  
Negative Effect ◽  
Parity Generator

An all-optical non-inverted parity generator and checker based on semiconductor optical amplifiers (SOAs) are proposed with four-wave mixing (FWM) and cross-gain modulation (XGM) non-linear effects. A 2-bit parity generator and checker using by exclusive NOR (XNOR) and exclusive OR (XOR) gates are implemented by first SOA and second SOA with 10 Gb/s return-to-zero (RZ) code, respectively. The parity and check bits are provided by adjusting the center wavelength of the tunable optical bandpass filter (TOBPF). A saturable absorber (SA) is used to reduce the negative effect of small signal clock (Clk) probe light to improve extinction ratio (ER) and optical signal-to-noise ratio (OSNR). For Pe and Ce (even parity bit and even check bit) without Clk probe light, ER and OSNR still maintain good performance because of the amplified effect of SOA. For Po (odd parity bit), ER and OSNR are improved to 1 dB difference for the original value. For Co (odd check bit), ER is deteriorated by 4 dB without SA, while OSNR is deteriorated by 12 dB. ER and OSNR are improved by about 2 dB for the original value with the SA. This design has the advantages of simple structure and great integration capability and low cost.

Direct calculations on the band offsets of large-lattice-mismatched and heterovalent Si and III–V semiconductors

2021 ◽  
Vol 42 (11) ◽  
pp. 112102
Author(s):  
Yuying Hu ◽  
Chen Qiu ◽  
Tao Shen ◽  
Kaike Yang ◽  
Huixiong Deng
Keyword(s):  
Lattice Mismatch ◽  
Direct Method ◽  
Large Strain ◽  
Current Method ◽  
Band Offset ◽  
Light Sources ◽  
Type I ◽  
Band Offsets ◽  
Large Lattice ◽  
Silicon Based

Abstract Band offset in semiconductors is a fundamental physical quantity that determines the performance of optoelectronic devices. However, the current method of calculating band offset is difficult to apply directly to the large-lattice-mismatched and heterovalent semiconductors because of the existing electric field and large strain at the interfaces. Here, we proposed a modified method to calculate band offsets for such systems, in which the core energy level shifts caused by heterovalent effects and lattice mismatch are estimated by interface reconstruction and the insertion of unidirectional strain structures as transitions, respectively. Taking the Si and III–V systems as examples, the results have the same accuracy as what is a widely used method for small-lattice-mismatched systems, and are much closer to the experimental values for the large-lattice-mismatched and heterovalent systems. Furthermore, by systematically studying the heterojunctions of Si and III–V semiconductors along different directions, it is found that the band offsets of Si/InAs and Si/InSb systems in [100], [110] and [111] directions belong to the type I, and could be beneficial for silicon-based luminescence performance. Our study offers a more reliable and direct method for calculating band offsets of large-lattice-mismatched and heterovalent semiconductors, and could provide theoretical support for the design of the high-performance silicon-based light sources.

scholarly journals Quad-Band Plasmonic Perfect Absorber for Visible Light with a Patchwork of Silicon Nanorod Resonators

Materials ◽  
2018 ◽  
Vol 11 (10) ◽  
pp. 1954 ◽  
Author(s):  
Can Cao ◽  
Yongzhi Cheng
Keyword(s):  
Visible Light ◽  
Transverse Electric ◽  
Transverse Magnetic ◽  
Localized Surface Plasmon ◽  
Perfect Absorber ◽  
Absorption Properties ◽  
Perfect Absorption ◽  
Potential Applications ◽  
Polarization Insensitive ◽  
Band Absorption

In this paper, a plasmonic perfect absorber (PPA) based on a silicon nanorod resonator (SNRR) for visible light is proposed and investigated numerically. The proposed PPA is only a two-layer nanostructure consisting of a SNRR periodic array and metal substrate. The perfect absorption mainly originates from excitation of the localized surface plasmon resonance (LSPR) mode in the SNRR structure. The absorption properties of this design can be adjusted by varying the radius (r) and height (h) of the SNRR structure. What is more, the stronger quad-band absorption can be achieved by combing four different radius of the SNRR in one period as a super unit-cell. Numerical simulation indicates that the designed quad-band PPA can achieve the absorbance of 99.99%, 99.8%, 99.8%, and 92.2% at 433.5 THz, 456 THz, 482 THz, and 504.5 THz, respectively. Further simulations show that the proposed PPA is polarization-insensitive for both transverse electric (TE) and transverse magnetic (TM) modes. The proposed PPA can be a desirable candidate for some potential applications in detecting, sensing, and visible spectroscopy.

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