First-Principles Study Of Photoluminescence From Silicon/Silicon-Oxide Interfaces

1997 ◽  
Vol 486 ◽  
Author(s):  
H. Kageshima ◽  
K. Shiraishi
Keyword(s):  
First Principles ◽  
Silicon Oxide ◽  
Lone Pair ◽  
Wave Functions ◽  
First Principles Calculation ◽  
Oxide Interface ◽  
Nano Structures ◽  
Strong Localization ◽  
Localized Excitons ◽  
Silicon Silicon

AbstractExperimentally reported interfacial luminescence from silicon nano structures are studied by using a first-principles calculation of a Si(100) quantum slab covered with silicon oxide. When Si-OH bonds were introduced at the silicon/silicon-oxide interface, wave functions at the valence band top and near conduction band bottom localized vertically and laterally near the Si-OH bonds. Such strong localization is the result of the cooperation of the coupling of non-bonding 2p lone pair orbitals on interfacial 0 atoms and the strong dipole of OH. Furthermore, the localization is significant only in silicon nano structures. This localization of the wave functions can be the source for creating localized excitons, which can dramatically enhance the intensity of photoluminescence. Therefore, interfacial Si-OH bonds are a theoretically convincing possible source of reported interfacial luminescence.

Nitrogen Implantation and Diffusion in Silicon

1999 ◽  
Vol 568 ◽  
Author(s):  
Lahir Shaik Adam ◽  
Mark E. Law ◽  
Omer Dokumaci ◽  
Yaser Haddara ◽  
Cheruvu Murthy ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Gate Oxide ◽  
Nitrogen Diffusion ◽  
Nitrogen Implantation ◽  
Oxide Interface ◽  
Diffusion Behavior ◽  
Czochralski Silicon ◽  
Interface Modeling ◽  
And Diffusion ◽  
Silicon Silicon

ABSTRACTNitrogen implantation can be used to control gate oxide thicknesses [1,2]. This study aims at studying the fundamental behavior of nitrogen diffusion in silicon. Nitrogen at sub-amorphizing doses has been implanted as N2+ at 40 keV and 200 keV into Czochralski silicon wafers. Furnace anneals have been performed at a range of temperatures from 650°C through 1050°C. The resulting annealed profiles show anomalous diffusion behavior. For the 40 keV implants, nitrogen diffuses very rapidly and segregates at the silicon/ silicon-oxide interface. Modeling of this behavior is based on the theory that the diffusion is limited by the time to create a mobile nitrogen interstitial.

Hydrogen passivation of silicon/silicon oxide interface by atomic layer deposited hafnium oxide and impact of silicon oxide underlayer

2018 ◽  
Vol 36 (1) ◽  
pp. 01A116 ◽  
Author(s):  
Evan Oudot ◽  
Mickael Gros-Jean ◽  
Kristell Courouble ◽  
Francois Bertin ◽  
Romain Duru ◽  
...  
Keyword(s):  
Hafnium Oxide ◽  
Silicon Oxide ◽  
Atomic Layer ◽  
Hydrogen Passivation ◽  
Oxide Interface ◽  
Silicon Silicon

A New Model Silicon/Silicon Oxide Interface Synthesized fromH10Si10O15andSi(100)-2×1

1997 ◽  
Vol 36 (Part 1, No. 3B) ◽  
pp. 1622-1626 ◽  
Author(s):  
K. Z. Zhang ◽  
Leah M. Meeuwenberg ◽  
Mark M. Banaszak Holl ◽  
F. R. McFeely
Keyword(s):  
Silicon Oxide ◽  
Oxide Interface ◽  
New Model ◽  
Silicon Silicon

scholarly journals Probing the silicon-silicon oxide interface of Si(111)SiO2Cr MOS structures by DC-electric-field-induced second harmonic generation

1996 ◽  
Vol 352-354 ◽  
pp. 1033-1037 ◽  
Author(s):  
O.A. Aktsipetrov ◽  
A.A. Fedyanin ◽  
E.D. Mishina ◽  
A.N. Rubtsov ◽  
C.W. van Hasselt ◽  
...  
Keyword(s):  
Electric Field ◽  
Second Harmonic Generation ◽  
Harmonic Generation ◽  
Silicon Oxide ◽  
Second Harmonic ◽  
Oxide Interface ◽  
Dc Electric Field ◽  
Mos Structures ◽  
Silicon Silicon

Contamination Control of Polysilicon Gates in a Vertical Reactor Cluster Tool

1993 ◽  
Vol 36 (3) ◽  
pp. 33-36
Author(s):  
C. Werkhoven ◽  
E. Granneman ◽  
E. Lindow ◽  
R. de Blank ◽  
S. Verhavcrbeke ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Native Oxide ◽  
Oxide Interface ◽  
Organic Contamination ◽  
Contamination Control ◽  
Defect Control ◽  
Leak Tightness ◽  
Oxide Removal ◽  
Silicon Silicon ◽  
Cluster Tool

This paper demonstrates that defect control is greatly improved when using the protected environment of a vertical reactor cluster tool comprising a preclean station. The cluster tool investigated combines the established process stability of vertical reactors with new capabilities as native oxide removal, ultraclean wafer transport, and reactors shielded from enviromental contamination. An adequate combination of clean gas usage and leak tightness makes it possible to apply HF vapor etching effectively in order to control the properties of the silicon-silicon oxide interface. For different precleaning conditions, interface and bulk contamination was measured, the sources identified, and the effect of improvements monitored. To this end, several electrical parameters were determined, including the analysis of Qhd and Ehd. Quantitative TXRF and SIMS techniques were used to correlate the results with metallic and organic contamination.

First-Principles Study of Interfacial Reaction Atomic Process at Silicon Oxidation

1997 ◽  
Vol 492 ◽  
Author(s):  
H. Kageshima ◽  
K. Shiraishi
Keyword(s):  
First Principles ◽  
Process Model ◽  
Silicon Oxide ◽  
Oxidation Process ◽  
First Principles Calculation ◽  
Microscopic Approach ◽  
Silicon Oxidation ◽  
Atomic Process ◽  
Plausible Assumption ◽  
Enhanced Diffusion

ABSTRACTA theoretical atomic process model of the interfacial oxidation reaction on a silicon substrate is proposed based on first-principles calculation. In the calculation, H-terminated Si(100) surfaces are used for the first approximation of the silicon-oxide/silicon interfaces. The proposed atomic process model is based on the plausible assumption that the remaining stress in the oxidized region is kept at a minimum and does not break the grown Si-O-Si network when the oxidation proceeds. As a natural consequence, Si atoms are emitted from the interface as the oxidation proceeds to release the stress due to substitution of Si-Si bonds by Si-O-Si bonds. This emission is consistent with well-known experiments of oxidation-induced stacking faults and oxidation-enhanced diffusion. Our model presents a microscopic approach for understanding the silicon oxidation process, whereas the widely accepted Deal-Grove model presents a macroscopic one.

Direct inversion of interfacial reflectivity data using the Patterson function

2003 ◽  
Vol 36 (6) ◽  
pp. 1352-1355 ◽  
Author(s):  
Benoît Bataillou ◽  
Hubert Moriceau ◽  
François Rieutord
Keyword(s):  
Silicon Oxide ◽  
Model Fitting ◽  
Phase Problem ◽  
Oxide Interface ◽  
X Ray ◽  
Patterson Function ◽  
Direct Inversion ◽  
Scattering Technique ◽  
Reflectivity Data ◽  
Silicon Silicon

It is shown here that the interfacial profile between two bonded wafers can be directly determined using X-ray reflectivity without resorting to standard model-fitting of the data. The phase problem inherent to any structure determination by scattering technique is solved in this case using a known silicon/silicon oxide interface, which acts as a phase reference for the reflected signals.

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