Direct inversion of interfacial reflectivity data using the Patterson function

2003 ◽  
Vol 36 (6) ◽  
pp. 1352-1355 ◽  
Author(s):  
Benoît Bataillou ◽  
Hubert Moriceau ◽  
François Rieutord
Keyword(s):  
Silicon Oxide ◽  
Model Fitting ◽  
Phase Problem ◽  
Oxide Interface ◽  
X Ray ◽  
Patterson Function ◽  
Direct Inversion ◽  
Scattering Technique ◽  
Reflectivity Data ◽  
Silicon Silicon

It is shown here that the interfacial profile between two bonded wafers can be directly determined using X-ray reflectivity without resorting to standard model-fitting of the data. The phase problem inherent to any structure determination by scattering technique is solved in this case using a known silicon/silicon oxide interface, which acts as a phase reference for the reflected signals.

Nitrogen Implantation and Diffusion in Silicon

1999 ◽  
Vol 568 ◽  
Author(s):  
Lahir Shaik Adam ◽  
Mark E. Law ◽  
Omer Dokumaci ◽  
Yaser Haddara ◽  
Cheruvu Murthy ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Gate Oxide ◽  
Nitrogen Diffusion ◽  
Nitrogen Implantation ◽  
Oxide Interface ◽  
Diffusion Behavior ◽  
Czochralski Silicon ◽  
Interface Modeling ◽  
And Diffusion ◽  
Silicon Silicon

ABSTRACTNitrogen implantation can be used to control gate oxide thicknesses [1,2]. This study aims at studying the fundamental behavior of nitrogen diffusion in silicon. Nitrogen at sub-amorphizing doses has been implanted as N2+ at 40 keV and 200 keV into Czochralski silicon wafers. Furnace anneals have been performed at a range of temperatures from 650°C through 1050°C. The resulting annealed profiles show anomalous diffusion behavior. For the 40 keV implants, nitrogen diffuses very rapidly and segregates at the silicon/ silicon-oxide interface. Modeling of this behavior is based on the theory that the diffusion is limited by the time to create a mobile nitrogen interstitial.

Hydrogen passivation of silicon/silicon oxide interface by atomic layer deposited hafnium oxide and impact of silicon oxide underlayer

2018 ◽  
Vol 36 (1) ◽  
pp. 01A116 ◽  
Author(s):  
Evan Oudot ◽  
Mickael Gros-Jean ◽  
Kristell Courouble ◽  
Francois Bertin ◽  
Romain Duru ◽  
...  
Keyword(s):  
Hafnium Oxide ◽  
Silicon Oxide ◽  
Atomic Layer ◽  
Hydrogen Passivation ◽  
Oxide Interface ◽  
Silicon Silicon

A New Model Silicon/Silicon Oxide Interface Synthesized fromH10Si10O15andSi(100)-2×1

1997 ◽  
Vol 36 (Part 1, No. 3B) ◽  
pp. 1622-1626 ◽  
Author(s):  
K. Z. Zhang ◽  
Leah M. Meeuwenberg ◽  
Mark M. Banaszak Holl ◽  
F. R. McFeely
Keyword(s):  
Silicon Oxide ◽  
Oxide Interface ◽  
New Model ◽  
Silicon Silicon

X-ray photoelectron spectroscopy study of rapid thermal annealed silicon–silicon oxide systems

1997 ◽  
Vol 81 (11) ◽  
pp. 7386-7391 ◽  
Author(s):  
W. K. Choi ◽  
F. W. Poon ◽  
F. C. Loh ◽  
K. L. Tan
Keyword(s):  
Photoelectron Spectroscopy ◽  
Silicon Oxide ◽  
Spectroscopy Study ◽  
Oxide Systems ◽  
X Ray ◽  
Silicon Silicon

The Phase of Scattering Profiles & X-Ray/Neutron Reflectivity

1994 ◽  
Vol 376 ◽  
Author(s):  
P.S. Pershan
Keyword(s):  
Critical Angle ◽  
Scattering Amplitude ◽  
Surface Scattering ◽  
Neutron Reflectivity ◽  
Phase Problem ◽  
X Ray Diffraction ◽  
Phase Information ◽  
X Ray ◽  
Reflectivity Data ◽  
Amplitude Density

ABSTRACTThe phase problem that troubles x-ray diffraction is also a problem for x-ray and neutron reflectivity; however, there are a range of small angles just beyond the critical angle for which the reflectivity contains information on the phase of the surface scattering amplitude. In principle this phase information can be used to determine the asymmetry of the normal gradient of the scattering amplitude density. We discuss here practical conditions under which this symmetry can, or cannot, be extracted from reflectivity data.

Preparation of Flower-Like Silica Microstructures

2010 ◽  
Vol 123-125 ◽  
pp. 1295-1298
Author(s):  
Wen Qi Wang ◽  
Zhen Sheng Peng
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Oxide ◽  
Silicon Monoxide ◽  
Metal Catalyst ◽  
X Ray ◽  
Transmission Electron ◽  
Silicon Silicon ◽  
Scanning Electron

Novel flower-like silica microstructures have been synthesized through heating silicon, silicon monoxide and active carbon mixed powders under an H2/Ar (3%) atmosphere at 1050°C without assistance of any metal catalyst. Scanning electron microscopy (SEM), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HRTEM) and energy dispersive x-ray spectrometer (EDS) analyses reveal that the wires are amorphous and consist only of silicon oxide, generated from the reaction of CO with SiC. A possible growth model based on both of vapor-solid (VS) and the Oxide-assisted growth (OAG) mechanism has been supposed here to explain this phenomenon.

scholarly journals Probing the silicon-silicon oxide interface of Si(111)SiO2Cr MOS structures by DC-electric-field-induced second harmonic generation

1996 ◽  
Vol 352-354 ◽  
pp. 1033-1037 ◽  
Author(s):  
O.A. Aktsipetrov ◽  
A.A. Fedyanin ◽  
E.D. Mishina ◽  
A.N. Rubtsov ◽  
C.W. van Hasselt ◽  
...  
Keyword(s):  
Electric Field ◽  
Second Harmonic Generation ◽  
Harmonic Generation ◽  
Silicon Oxide ◽  
Second Harmonic ◽  
Oxide Interface ◽  
Dc Electric Field ◽  
Mos Structures ◽  
Silicon Silicon

Contamination Control of Polysilicon Gates in a Vertical Reactor Cluster Tool

1993 ◽  
Vol 36 (3) ◽  
pp. 33-36
Author(s):  
C. Werkhoven ◽  
E. Granneman ◽  
E. Lindow ◽  
R. de Blank ◽  
S. Verhavcrbeke ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Native Oxide ◽  
Oxide Interface ◽  
Organic Contamination ◽  
Contamination Control ◽  
Defect Control ◽  
Leak Tightness ◽  
Oxide Removal ◽  
Silicon Silicon ◽  
Cluster Tool

This paper demonstrates that defect control is greatly improved when using the protected environment of a vertical reactor cluster tool comprising a preclean station. The cluster tool investigated combines the established process stability of vertical reactors with new capabilities as native oxide removal, ultraclean wafer transport, and reactors shielded from enviromental contamination. An adequate combination of clean gas usage and leak tightness makes it possible to apply HF vapor etching effectively in order to control the properties of the silicon-silicon oxide interface. For different precleaning conditions, interface and bulk contamination was measured, the sources identified, and the effect of improvements monitored. To this end, several electrical parameters were determined, including the analysis of Qhd and Ehd. Quantitative TXRF and SIMS techniques were used to correlate the results with metallic and organic contamination.

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