Recent Progress of Electro-optic Polymers for Device Applications

1997 ◽  
Vol 488 ◽  
Author(s):  
Alex K-Y. Jen ◽  
Qing Yang ◽  
Seth R. Marder ◽  
Larry R. Dalton ◽  
Ching-Fong Shu
Keyword(s):  
Data Storage ◽  
High Speed ◽  
Stable State ◽  
Optical Data Storage ◽  
Device Fabrication ◽  
Optical Data ◽  
Material System ◽  
Electro Optic ◽  
Potential Applications ◽  
Device Applications

AbstractElectro-optic (E-O) polymers have drawn great interest in recent years because of their potential applications in photonics devices such as high speed modulators and switches, optical data storage and information processing1–2. In order to have suitable materials for device fabrication, it is essential to design and develop polymeric material systems (active and passive polymers) with matched refractive indices, large E-O coefficients, good temporal and photochemical stability3–8 The E-O response of an active polymer commonly arises from the electric field induced alignment of its second-order nonlinear optical (NLO) chromophore, either doped as a guest/host system or covalently bonded as a side-chain. Because of the strong interaction among the electric dipoles, the poled structure is in a meta-stable state; the poled NLO chromophores which possess large dipole moment will tend to relax back to the randomly oriented state. As a result, the stability of the poled structure strongly depends on the rigidity of the overall material system. As it might be expected, the continuous increases of the rigidity and Tg of poled polymers imposes constraints on the selection of suitable chromophores that can survive the hightemperature poling and processing conditions. To circumvent this problem, we have developed a series of chromophores that possess conformation-locked geometry and perfluoro-dicyanovinylsubstituted electron-accepting group which demonstrate both good thermal stabilty and nonlinearity. This paper provides a brief review of these highly efficient and thermally stable chromophores and polymers for device applications.

High Bandwidth Electro-optic Scanner for Optical Data Storage

2000 ◽  
Vol 39 (Part 1, No. 2B) ◽  
pp. 883-887 ◽  
Author(s):  
Jinhui Zhai ◽  
Yuhong Huang ◽  
Steve Schroeck ◽  
W. Messner ◽  
Daniel D. Stancil ◽  
...  
Keyword(s):  
Data Storage ◽  
Optical Data Storage ◽  
Optical Data ◽  
Electro Optic ◽  
High Bandwidth

Electronic and Optoelectronic Devices Based on GaN-AIGaN Heterostructures

1994 ◽  
Vol 339 ◽  
Author(s):  
M. Asif Khan ◽  
J. N. Kuznia ◽  
S. Krishnankutty ◽  
R. A. Skogman ◽  
D. T. Olson ◽  
...  
Keyword(s):  
Solid State ◽  
Data Storage ◽  
High Power ◽  
Oil And Gas ◽  
Optical Data Storage ◽  
Optical Data ◽  
Future Research ◽  
Material System ◽  
Ir Radiation ◽  
Processing Technologies

ABSTRACTAvailability of optoelectronic components operating in the U V-Visible part of the spectrum opens several exciting and important system applications. Solid state ultraviolet and blue-green lasers can increase the optical data storage density of CDROM/WORM and magneto-optical disks by a factor of four. They are also ideally suited for environmental pollutant identification and monitoring. On the other hand, solid state ultraviolet detectors that do not respond to visible or IR radiation are highly desirable for various commercial systems. These include medical imaging, industrial boiler systems, fire/flame safeguard systems around oil and gas installations and several military applications. A key requirement for these ultraviolet laser and sensor devices is the availability of a semiconductor material system with high quality controlled doping and fabrication technology.AlxGa1−xN and InxGa1−xN for which the direct bandgap can be tailored from the visible to the deep UV is such a material system. Ours and several other research groups (nationally and internationally) have been developing AlxGa1−xN materials and processing technologies over the past several years. Recently, by employing innovative approaches, significant advances have been made in heteroepitaxy of AlxGa1−xN on sapphire substrates. Also, controlled n and p-type doping has been achieved. Several high performance devices that form the basis of exciting future research have been demonstrated. These include high responsivity visible blind ultraviolet sensors, basic transistor structures and high power blue light emitting diodes. These pave the way for future research leading to exciting products such as blue-green lasers and UV-imaging arrays. The demonstrated transistor structures are foundation for building AlxGa1−xN -GaN based high power, high frequency and high temperature electronic components. In this paper, we will summarize some of our recent work and reflect on the potential and the issues in AlxGa1−xN-InxGa1−xN based device development.

Aeroelastic Flutter of a Flexible Disk Rotating in an Enclosed Compressible Fluid

2003 ◽  
Author(s):  
Namcheol Kang ◽  
Arvind Raman
Keyword(s):  
Data Storage ◽  
Traveling Waves ◽  
Compressible Fluid ◽  
High Speed ◽  
Hard Disk Drives ◽  
Low Noise ◽  
Optical Data Storage ◽  
Optical Data ◽  
Acoustic Oscillations ◽  
Flexible Disk

The aeroelastic stability of a thin, flexible disk rotating in an enclosed compressible fluid is investigated analytically through a discretization of the field equations of a rotating Kirchhoff plate coupled to the acoustic oscillations of the surrounding fluid. The discretization procedure exploits Green’s theorem and exposes two different gyroscopic effects underpinning the coupled system dynamics: one describes the gyroscopic coupling between the disk and acoustic oscillations, and another arises from the disk rotation. The discretized dynamical system is cast in the compact form of a classical gyroscopic system and acoustic and disk mode coupling rules are derived. Effects of eigenvalue veering of structure and acoustic dominated modes are investigated in detail. For the undamped system, coupled structure-acoustic traveling waves can destabilize through mode coalescence leading to flutter instability. Regions in parameter space are identified where structure-acoustic traveling waves of specific wave numbers destabilize. The results are expected to be relevant for the design of high speed, low vibration, low noise hard disk drives and optical data storage systems.

Nondestructive up-conversion readout in Er/Yb co-doped Na0.5Bi2.5Nb2O9-based optical storage materials for optical data storage device applications

2017 ◽  
Vol 5 (15) ◽  
pp. 3838-3847 ◽  
Author(s):  
Qiwei Zhang ◽  
Shuangshuang Yue ◽  
Haiqin Sun ◽  
Xusheng Wang ◽  
Xihong Hao ◽  
...  
Keyword(s):  
Data Storage ◽  
Optical Data Storage ◽  
Photon Absorption ◽  
Optical Data ◽  
Storage Device ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Device Applications ◽  
Co Doped ◽  
Absorption Mode

Er/Yb co-doped NBN photochromics exhibit excellent luminescence readout capability by using a two-photon absorption mode with extremely low destruction on information recording.

A Novel Approach to Obtain GeSbTe-Based High Speed Crystallizing Materials for Phase Change Optical Recording

2001 ◽  
Vol 674 ◽  
Author(s):  
Tae-Yon Lee ◽  
Byung-ki Cheong ◽  
Taek Sung Lee ◽  
Sung Jin Park ◽  
Won Mok Kim ◽  
...  
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
High Speed ◽  
Preliminary Test ◽  
Optical Data Storage ◽  
Optical Recording ◽  
Optical Data ◽  
Recording Layer ◽  
Novel Approach ◽  
Vegard’S Law

ABSTRACTA new approach is proposed to obtain fast crystallizing materials based on a conventional GeSbTe alloy for rewritable phase change optical data storage. By means of co-sputtering, Ge1Sb2Te4alloy was mixed with Sn1Bi2Te4alloy so as to form pseudo-binary alloys (Ge1Sb2Te4)1-x(Sn1Bi2Te4)x (x is a mole fraction). From structural and optical analyses of the co- sputtered and annealed alloy films, the formation of stable crystalline single phases was observed along with a Vegard's law behavior, suggesting a homogeneous mixing of the two alloys. By use of a 4 layered disk with (Ge1Sb2Te4)0.85(Sn1Bi2Te4)0.15 recording layer, a preliminary test of writing and erasing was carried out and the results were compared with the case of the disk with Ge1Sb2Te4recording layer. The (Ge1Sb2Te4)0.85(Sn1Bi2Te4)0.15 recording layer was found to yield markedly higher erasibility, especially with increasing disk linear velocity.

A Rewritable Optical Data Storage Material System by [2 + 2] Photocycloreversion−Photocycloaddition

2008 ◽  
Vol 20 (4) ◽  
pp. 1194-1196 ◽  
Author(s):  
Fengyu Li ◽  
Junpeng Zhuang ◽  
Guiyuan Jiang ◽  
Huohong Tang ◽  
Andong Xia ◽  
...  
Keyword(s):  
Data Storage ◽  
Optical Data Storage ◽  
Optical Data ◽  
Material System ◽  
Storage Material

In-Situ Tem Study of Crystallisation of Amorphous SbOx Films

1995 ◽  
Vol 404 ◽  
Author(s):  
R. Nayak ◽  
A. K. Petford-Long ◽  
R. C. Doole ◽  
C. N. Afonso
Keyword(s):  
Data Storage ◽  
Laser Pulses ◽  
Optical Data Storage ◽  
Optical Data ◽  
In Situ Tem ◽  
Video Tape ◽  
Random Nucleation ◽  
Video Frames ◽  
Potential Applications

AbstractAmorphous d.c. sputtered SbOx films (0.19< x<2.0) have been found to be fast crystallising materials sensitive to nano- and pico-second laser pulses, and have potential applications as optical data-storage media. They were crystallised in-situ in a JEOL 4000EX TEM, and the crystallisation recorded onto video tape. The crystallisation of the SbO0.37 films occurred by random nucleation followed by growth until coalescence. In contrast the crystallisation of the SbO0.533 films occurred by surface crystallisation across the whole film followed by bulk crystallisation through the film, during which contrast in the TEM increased steadily. Analysing the video frames in an image processing package enabled kinetic parameters such as transformation index and activation energy to be extracted. High resolution transmission electron microscopy showed the crystalline phase to contain nano-crystallites approximately 10 nm in size in a less-ordered matrix.

scholarly journals Influences of Central Units and Terminal Chains on the Banana-Shaped Liquid Crystals

Crystals ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 857
Author(s):  
Tang Xin Ting ◽  
Mohd Sani Sarjadi ◽  
Md Lutfor Rahman
Keyword(s):  
Liquid Crystals ◽  
Data Storage ◽  
Smart Materials ◽  
Optical Data Storage ◽  
Optical Data ◽  
Display Devices ◽  
Functionalized Materials ◽  
Potential Applications ◽  
The Impact ◽  
Photoisomerization Process

Azo-functionalized materials are one of the appealing groups of the functionalized materials owing to their photoswitching behaviour and have been explored for various potential applications viz., optical data storage, sensor, display devices, nonlinear materials and molecular switches. Recently, azo-functionalized bent-core liquid crystals (BCLCs) have gained significant attention because they have dual properties of BCLCs and azobenzene, which enables to generate new multifaceted functional and smart materials. In this report, the recently synthesized azobenzene containing bent-core mesogens and its subclass, the so-called hockey stick and V-shaped molecules are summarized. The mesomorphic behaviour of reported BCLCs affected by the type of central core unit, the nature, number and position of the lateral substituents and the type and length of the terminal chain are discussed. The photoisomerization process of these photoresponsive BCLCs in solid, solution and mesophase, as well as the impact of light on the chemical and electrical properties of them, are discussed.

Sign in / Sign up

Export Citation Format

Share Document