A Three-Dimensional Monte Carlo Model for Phosphorus Implants into (100) Single-Crystal Silicon

1997 ◽  
Vol 490 ◽  
Author(s):  
Myung-Sik Son ◽  
Ho-Jung Hwang
Keyword(s):  
Monte Carlo ◽  
Single Crystal ◽  
Room Temperature ◽  
Monte Carlo Model ◽  
Three Dimensional ◽  
Single Crystal Silicon ◽  
Amorphous Region ◽  
Electronic Energy ◽  
Crystal Silicon ◽  
Dynamic Simulation Model

ABSTRACTAn alternative three-dimensional (3D) Monte Carlo (MC) dynamic simulation model for phosphorus implant into (100) single-crystal silicon has been developed which incorporates the effects of channeling and damage. This model calculates the trajectories of both implanted ions and recoiled silicons and concurrently and explicitly affects both ions and recoils due to the presence of accumulative damage. In addition, the model for room-temperature implant accounts for the self-annealing effect using our defined recombination probabilities for vacancies and interstitials saved on the unit volumes. Our model has been verified by the comparison with the previously published SIMS data over commonly used energy range between 10 and 180 keV, using our proposed empirical electronic energy loss model. The 3D formations of the amorphous region and the ultra-shallow junction around the implanted region could be predicted by using our model, TRICSI (TRansport Ions into Crystal-Silicon).

A Monte Carlo Binary Collision Model for  BF 2 Implants into (100) Single‐Crystal Silicon

1996 ◽  
Vol 143 (11) ◽  
pp. 3784-3790 ◽  
Author(s):  
S.‐H. Yang ◽  
C. M. Snell ◽  
S. J. Morris ◽  
S. Tian ◽  
K. Parab ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Binary Collision ◽  
Crystal Silicon ◽  
Collision Model

Formation of Buried Tisi2 Layers in Single Crystal Silicon by Ion Implantion

1987 ◽  
Vol 107 ◽  
Author(s):  
P. Madakson ◽  
G.J. Clark ◽  
F.K. Legoues ◽  
F.M. d'Heurle ◽  
J.E.E. Baglin
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Room Temperature ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Buried Layers

Buried TiSi2 layers, about 600Å thick and 900Å below the surface, were formed in < 111> silicon by ion implantation. The implantation was done with either 120 or 170 keV Ti+ to doses ranging from 5 x 1016 to 2 x 1017 ions/cm2, and at temperatures of between ambient and 650° C. Annealing was done at 600° C, 700°C and 1000°C. Continuous buried layers were achieved only with samples implanted with doses equal or greater than 1017 ions/cm2 and at temperatures above 450°C. Below this dose TiSi2, was present only as discrete precipitates. For room temperature implants, the TiSi2, layer is formed on the surface. The damage present consists of dispersed TiSi6 precipitates and microtwins.

A New Local Electronic Stopping Model for the Monte Carlo Simulation of Arsenic Ion Implantation into (100) Single-Crystal Silicon

1995 ◽  
Vol 389 ◽  
Author(s):  
S.-H. Yang ◽  
S. Morris ◽  
S. Tian ◽  
K. Parab ◽  
A. F. Tasch ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Ion Implantation ◽  
Single Crystal ◽  
Density Functional ◽  
Single Crystal Silicon ◽  
Stopping Power ◽  
Crystal Silicon ◽  
Electronic Density ◽  
New Model ◽  
Electronic Stopping Power

ABSTRACTIn this paper is reported the development and implementation of a new local electronic stopping model for arsenic ion implantation into single-crystal silicon. Monte Carlo binary collision (MCBC) models are appropriate for studying channeling effects since it is possible to include the crystal structure in the simulators. One major inadequacy of existing MCBC codes is that the electronic stopping of implanted ions is not accurately and physically accounted for, although it is absolutely necessary for predicting the channeling tails of the profiles. In order to address this need, we have developed a new electronic stopping power model using a directionally dependent electronic density (to account for valence bonding) and an electronic stopping power based on the density functional approach. This new model has been implemented in the MCBC code, UT-MARLOWE The predictions of UT-MARLOWE with this new model are in very good agreement with experimentally-measured secondary ion mass spectroscopy (SIMS) profiles for both on-axis and off-axis arsenic implants in the energy range of 15-180 keV.

Persistent Photocurrent in InP Nanowires Heteroepitaxially Bridged Between Single Crystal Si Surfaces

2008 ◽  
Vol 1080 ◽  
Author(s):  
Ataur Sarkar ◽  
M. Saif Islam ◽  
Sungsoo Yi ◽  
A. Alec Talin
Keyword(s):  
Single Crystal ◽  
Room Temperature ◽  
Relaxation Times ◽  
Single Crystal Silicon ◽  
Surface States ◽  
Photonic Devices ◽  
Crystal Silicon ◽  
Slow Decay ◽  
Visible Laser ◽  
P Type

ABSTRACTRoom temperature photoelectrical characterization with 325-nm ultraviolet and 633-nm visible laser excitations is performed on lateral p-type InP nanowires bridged between vertically oriented heavily p-doped single crystal silicon electrodes. Experimental results under 5 V bias demonstrate persistent photoconductivity through a slow decay of excess photocurrent with relaxation times ∼110 s and ∼50 s for the UV and visible laser illuminations, respectively. Persistent photocurrent originates from the long recombination time due to carrier trapping in vacancies, defect centers, and surface states in the InP nanowires. The study opens a new understanding of trap physics of nanowire heterostructures, a critical investigation for applications of these materials in photonic devices.

Dislocation-controlled microscopic mechanical phenomena in single crystal silicon under bending stress at room temperature

2020 ◽  
Vol 55 (17) ◽  
pp. 7359-7372 ◽  
Author(s):  
Hiroshi Yamaguchi ◽  
Junichi Tatami ◽  
Tsukaho Yahagi ◽  
Hiromi Nakano ◽  
Motoyuki Iijima ◽  
...  
Keyword(s):  
Single Crystal ◽  
Room Temperature ◽  
Single Crystal Silicon ◽  
Bending Stress ◽  
Crystal Silicon ◽  
Mechanical Phenomena

Electron-beam spreading in thin foils at 40keV

1983 ◽  
Vol 41 ◽  
pp. 370-371
Author(s):  
T.A. Stephenson ◽  
M.H. Loretto ◽  
I.P. Jones ◽  
P. Augustus
Keyword(s):  
Monte Carlo ◽  
Single Crystal ◽  
Cross Sections ◽  
Single Crystal Silicon ◽  
Orientation Dependence ◽  
High Angle ◽  
Crystal Silicon ◽  
Beam Spreading ◽  
Monte Carlo Calculations ◽  
Thin Foils

Experiments have been performed to determine the effects of thickness, and crystallinity on beam spreading in thin foils. The experimental technique consists of measuring an incident and exit electron probe size as shown in Fig. 1. Beam spreading is defined as the difference between these two quantities. Results were compared with Monte Carlo calculations.Beam spreading experiments in single crystal silicon oriented positive of a 440 reflection have shown that the experimental measurements are adequately described by Monte Carlo calculations using Doyle and Turner elastic scattering cross-sections (Fig.2). The addition of an inelastic component via the Bethe continuous loss approximation produces an insignificant change. Adjustment for the generation and scattering of fast secondary electrons is reserved for future work.Two experiments were performed to elucidate the effects of crystallinity. The first involved single crystal silicon in which exit grobe size measurgments were performed with diffracting conditions s=+0.0027Å-1 and s=-0.0034Å-1 from 220 (Table 1). Since beam spreading is dependent on high angle scattering, these results are qualitatively consistent with the orientation dependence of high angle diffuse scattering.

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