The Environment-Dependent Interatomic Potential Applied To Silicon Disordered Structures And Phase Transitions

1997 ◽  
Vol 491 ◽  
Author(s):  
Martin Z. Bazant ◽  
Efthimios Kaxiras ◽  
J. F. Justo

ABSTRACTThe recently developed Environment-Dependent Interatomic Potential (EDIP) holds the promise of a new degree of transferability in describing bulk phases and defects of elemental covalent solids with a simple theoretically motivated functional form. Here we explore to what extent the environment-dependence of the model can extrapolate successes of the fitted version for Si for bulk defects to disordered phases, which involve local configurations very different from those used in fitting. We find that EDIP-Si provides an improved description of the metallic bonding bond angles of the liquid and is the first empirical potential to predict a quench directly from the liquid to the amorphous phase. The resulting amorphous structure is in closer agreement with ab initio and experimental results than with any artificial prepration method. We also show that melting of the bulk crystal and premelting of the (100)2×1 surface are reasonably well described by EDIP-Si in spite of its not being fit to any such properties.

1997 ◽  
Vol 469 ◽  
Author(s):  
J. F. Justo ◽  
M. Z. Bazant ◽  
E. Kaxiras ◽  
V. V. Bulatov ◽  
S. Yip

ABSTRACTWe present a new empirical potential for silicon which is a considerable improvement over existing models in describing structures away from equilibrium, such as bulk defects. The interatomic interaction is described by two- and three-body terms using theoretically motivated functional forms which emphasize chemical and physical trends. The numerical parameters in the functional forms are obtained by fitting to several ab initio calculations, which include bulk phases and defect structures. The model is tested to core properties of partial dislocations in the glide set {111}, which are not included in the database, and gives results in very good agreement with ab initio calculations. This is the only known potential capable of describing the structure of both the 30°- and 90°-partial dislocations.


1998 ◽  
Vol 538 ◽  
Author(s):  
J. F. Justo ◽  
F. De Brito Mota ◽  
A. Fazziom

AbstractWe combined empirical and ab initio methods to study structural and electronic properties of amorphous silicon nitride. For such study, we developed an interatomic potential to describe the interactions between silicon, nitrogen, and hydrogen atoms. Using this potential, we performed Monte Carlo simulations in a simulated annealing scheme to study structural properties of amorphous silicon nitride. Then this potential was used to generate relevant structures of a-SiNx:Hy which were input configurations to ab initio calculations. We investigated the electronic and structural role played by hydrogen incorporation in amorphous silicon nitride.


10.29007/6kp3 ◽  
2020 ◽  
Author(s):  
Renji Mukuno ◽  
Manabu Ishimaru

The structural changes of amorphous silicon (a-Si) under compressive pressure were examined by molecular-dynamics simulations using the Tersoff interatomic potential. a-Si prepared by melt-quenching methods was pressurized up to 30 GPa under different temperatures (300K and 500K). The density of a-Si increased from 2.26 to 3.24 g/cm3 with pressure, suggesting the occurrence of the low-density to high-density amorphous phase transformation. This phase transformation occurred at the lower pressure with increasing the temperature because the activation barrier for amorphous-to-amorphous phase transformation could be exceeded by thermal energy. The coordination number increased with pressure and time, and it was saturated at different values depending on the pressure. This suggested the existence of different metastable atomic configurations in a-Si. Atomic pair-distribution functions and bond-angle distribution functions suggested that the short-range ordered structure of high-density a-Si is similar to the structure of the high-pressure phase of crystalline Si (β-tin and Imma structures).


Author(s):  
Lionel Raff ◽  
Ranga Komanduri ◽  
Martin Hagan ◽  
Satish Bukkapatnam

When the system of interest becomes too complex to permit the use of ab initio methods to obtain the system potential-energy surfaces (PES), empirical potential surfaces are frequently employed to represent the force fields present in the system under investigation. In most cases, the functional forms present in these potentials are selected on the basis of chemical and physical intuitions. The parameters of the surface are frequently adjusted to fit a very small set of experimental data that comprise bond energies, equilibrium bond distances and angles, fundamental vibrational frequencies, and perhaps measured barrier heights to reactions of interest. Such potentials generally yield only qualitative or semiquantitative descriptions of the system dynamics. Several research groups have significantly improved the accuracy of the values of the experimental properties computed using empirical potential surfaces by fitting the chosen functional form for the potential to the force fields obtained from trajectories using ab initio Car-Parrinello molecular dynamics simulations. The fitting to the force fields is usually done using a least-squares fitting approach. This method has been employed by Izvekov et al. to obtain effective non-polarizable three-site force fields for liquid water. Carré et al. have employed such a procedure to obtain a new pair potential for silica. In their investigation, the vector of potential parameters was fitted using an iterative Levenberg-Marquardt algorithm. Tangney and Scandolo have also developed an interatomic force field for liquid SiO2 in which the parameters were fitted to the forces, stresses, and energies obtained from ab initio calculations. Ercolessi and Adams have used a quasi-Newtonian procedure to fit an empirical potential for aluminum to data obtained from first-principals computations. Empirical potentials can be improved by making the parameters parameterized functions of the coordinates defining the instantaneous positions of the atoms of the system. This approach has been successfully employed by numerous investigators The difficulty with this procedure is that the number of parameters that must be adjusted increases rapidly. Appropriate fitting of these parameters requires a much more extensive database. Finally, the actual fitting process can often be tedious, difficult, and time-consuming.


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