Field Emission from Nitrogen-Doped Diamond Film

1997 ◽  
Vol 498 ◽  
Author(s):  
M. Park ◽  
L. Bergman ◽  
W. B. Choi ◽  
A. T. Sowers ◽  
R. J. Nemanich ◽  
...  

ABSTRACTNitrogen-doped diamond films were prepared for the first time using melamine (C3H6N6) as the nitrogen source. To explore the differences in the films produced with different precursors, nitrogen-doped films were also produced using pure nitrogen gas as the source. Since melamine has a ring structure with pre-existing C-N bonds, the incorporation of nitrogen on substitutional sites of diamond lattice are expected. Relatively large amounts of substitutional nitrogen were successfully doped into diamond without degrading its quality. However, when pure nitrogen gas was used as a doping source, the quality of the diamond was not as high as the sample doped with nitrogen by melamine. Raman spectroscopy, photoluminescence spectroscopy (PL), and field emission measurements were carried out to characterize the samples. Nitrogen-doped diamond samples did not exhibit any significant reduction in turn-on fields. It is suggested that nitrogen doping has only a minor effect on the field emission properties of the diamond films.

1999 ◽  
Vol 86 (7) ◽  
pp. 3973-3982 ◽  
Author(s):  
A. T. Sowers ◽  
B. L. Ward ◽  
S. L. English ◽  
R. J. Nemanich

2006 ◽  
Vol 14 (2-3) ◽  
pp. 151-164 ◽  
Author(s):  
A. V. Okotrub ◽  
L. G. Bulusheva ◽  
V. V. Belavin ◽  
A. G. Kudashov ◽  
A. V. Gusel'nikov ◽  
...  

1998 ◽  
Vol 508 ◽  
Author(s):  
A.T. Sowers ◽  
B.L. Ward ◽  
R.J. Nemanich

AbstractThis study explores the field emission properties of nitrogen doped diamond grown by microwave plasma CVD. Several diamond samples were grown on silicon under varying conditions. With certain process parameters, films can be grown which exhibit photoluminescence bands at 1.945eV and 2.154eV that are attributed to single substitutional nitrogen. Field emission characteristics were measured in ultrahigh vacuum with a position variable anode. For samples grown with gas phase [N]/[C] ratios less than 16, damage from micro-arcs occurred during the field emission measurements. Samples grown at higher [N]/[C] content could be measured without damage. These measurements indicate relatively high threshold fields (>100V/µm) for electron emission. From the data, two possible field emission mechanisms are presented. Conducting defect states in the bandgap of diamond may provide a source of electrons to the emitting diamond surface.


2012 ◽  
Vol 112 (10) ◽  
pp. 103711 ◽  
Author(s):  
Huang-Chin Chen ◽  
Kamatchi Jothiramalingam Sankaran ◽  
Shen-Chuan Lo ◽  
Li-Jiaun Lin ◽  
Nyan-Hwa Tai ◽  
...  

2007 ◽  
Vol 7 (2) ◽  
pp. 570-574
Author(s):  
Yang Doo Lee ◽  
V. D. Blank ◽  
D. V. Batov ◽  
S. G. Buga ◽  
Yun-Hi Lee ◽  
...  

Carbon–nitrogen (CN) nanofibers were synthesized in argon–nitrogen gas mixture at 75 MPa by high isostatic pressure (HIP) apparatus using a graphite resistive heater. The CN nanofibers were grown in random with the diameter of about 200 nm and the length over 5 μm. The structures obtained can be divided bamboo-like, spring-like, and bead necklace-like CN nanofibers. The nitrogen content of up to 8.4% was found in CN nanofibers by EELS analysis. Field emission results showed that the density of field emitters and the field enhancement factors changed by surface treatments and that CN nanofibers contained glass frit. The screen-printed CN nanofiber had a turn-on field of 2 V/μm.


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