Influence of C, N and O Ion-Implantation on Yellow Luminescence

1998 ◽  
Vol 512 ◽  
Author(s):  
R. Zhang ◽  
L. Zhang ◽  
N. Perkins ◽  
T. F. Kuech
Keyword(s):  
Ion Implantation ◽  
Vapor Phase ◽  
Variable Temperature ◽  
Significant Loss ◽  
Vapor Phase Epitaxy ◽  
Yellow Luminescence ◽  
Measurement Temperature ◽  
Peak Energy ◽  
Integrated Intensity ◽  
Ion Implanted

ABSTRACTInfluence of C, N and O ion-implantation on the yellow luminescence (YL) of halide vapor phase epitaxy (HVPE) and metal-organic vapor phase epitaxy (MOVPE) grown GaN has been studied by photoluminescence (PL) spectroscopy. For the HVPE-grown samples, only C implantation produces a significant enhancement of YL while its corresponding overall PL integrated intensity is only ˜72% of its original value. Implantation of O or N do not appreciably change the YL but decrease the BE integrated intensities by a factor of ten. The full-width-halfmaximum (FWHM) of the BE band expanded to about 1.4 × of the original value in all three cases. These results indicate that one source of the YL is strongly correlated to incorporation of C into the GaN film. The C-induced defect complexes in GaN are optically active while O or N does not lead to any new luminescence features. The variable-temperature PL measurements on the C-implanted HVPE-grown GaN reveal that the FWHM of the YL band increases linearly and the peak energy of the YL changes very little with the increasing measurement temperature, while the integrated intensity of the YL band decreases monotonically. This trend of the YL FWHM and peak energy with the measurement temperature can be explained by a two-channel transition model. For MOVPE-grown GaN films., all ion-implanted samples exhibit a significant loss of both the YL and overall integrated PL intensity. Residual C contamination in the MOVPE samples could be large compared to the additional ion-implanted carbon leading to a reduced impact of the ion-implanted carbon.

Carbon And Hydrogen Induced Yellow Luminescence In Gallium Nitride Grown By Halide Vapor Phase Epitaxy

1997 ◽  
Vol 482 ◽  
Author(s):  
R. Zhang ◽  
T. F. Kuech
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Yellow Luminescence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Integrated Intensity ◽  
Shallow Acceptors ◽  
Recombination Channel ◽  
Increasing Temperature ◽  
Intentional Introduction

AbstractYellow luminescence (YL) from GaN was systematically investigated through the intentional introduction of carbon, from propane, and excess H2 during growth by the halide vapor phase epitaxy technique. All GaN films were studied by photoluminescence, X-ray diffraction and Hall measurements. The unintentionally doped GaN showed undetectable or very weak YL signal, while both C-doping and H2 addition resulted in a significant enhancement of YL. The blue- and red-shift of the YL band of the C-doped and ‘H2-grown’ GaN with the increasing temperature indicated that different mechanisms existed in these two cases. The temperature dependence of the integrated intensity of the YL band of both groups implicated that shallow donors, not ‘shallow’ acceptors participated the YL transition and that there were more than one radiative recombination channel within the YL band.

Effects of ion implantation on yellow luminescence in unintentional doped n-type GaN

Open Physics ◽  
2008 ◽  
Vol 6 (2) ◽  
Author(s):  
Limin Zhang ◽  
Xiaodong Zhang ◽  
Wei You ◽  
Zhen Yang ◽  
WenXiu Wang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Deep Level ◽  
Dose Dependence ◽  
Band Edge ◽  
Near Band Edge ◽  
Yellow Luminescence ◽  
C And N ◽  
Intensity Ratios ◽  
The One ◽  
Ion Implanted

AbstractThe effects of Si, O, C and N ion implantation with different implantation doses on yellow luminescence (YL) of GaN have been investigated. The as-grown GaN samples used in the work were of unintentional doped n-type, and the photoluminescence (PL) spectra of samples had strong YL. The experimental results showed that YL of ion implanted samples exhibited marked reductions compared to samples with no implantation, while the near band edge (NBE) emissions were reduced to a lesser extent. The deep-level centers associated with YL may be produced in GaN films by O and C ion implantation, and identities of these deep-level centers were analyzed. It was also found that the dose dependence of YL was analogous with the one of the intensity ratios of YL to the near band edge (NBE) emission (I YL/I NBE) for ion implanted samples. The possible reason for this comparability has been proposed.

Incorporation Of Er Into GaN By in-situ Doping During Halide Vapor Phase Epitaxy

1998 ◽  
Vol 512 ◽  
Author(s):  
Rong Zhang ◽  
T. F. Kuech
Keyword(s):  
Vapor Phase ◽  
Luminescence Band ◽  
Room Temperature ◽  
Vapor Phase Epitaxy ◽  
Yellow Luminescence ◽  
Er Doping ◽  
Sims Analysis ◽  
Er Doped ◽  
Source Materials

ABSTRACTThe incorporation of Er into GaN by in-situ doping during halide vapor phase epitaxy has been investigated. The NH3, HCl, metallic Ga and Er were used as source materials, while N2 was employed as a carrier gas. The GaN:Er films were obtained at different Ga/Er source temperatures. The SIMS analysis shows that the steady state Er doping concentration can be as high as 2×1018 cm−3. All in-situ Er-doped samples luminescence at 1.54 μm due to the 4I13/2 → 4I15/2 transition of Er3+ at both low (11K) and room temperature. The higher the Ga/Er boat temperature, the stronger the 1.54 μm luminescence, implying a higher incorporation rate of Er into the GaN. The 4I11/2 → 4I15/2 transition luminescence, centered around 980 nm, can also be detected at both low and room temperature. The broad-spectrum PL measurements exhibited sharp bandedge luminescence without the presence of the yellow luminescence band.

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